NJL5902R-2
COBP PHOTO REFLECTOR
GENERAL DESCRIPTION
The NJL5902R-2 is the compact surface mount type photo reflector, which is permitted the Lead(Pb)-free reflow soldering (260 , 2 Times). The NJL5902R-2 has realized the compact package compared with conventional product/NJL5902R-1.
FEATURES
• Miniature, thin package : 1.2mm × 1.7mm × 0.6mm • Low operating dark current : 0.5μA max. • Pb free solder re-flowing permitted : 260°C, 2times • Built-in visible light cut-off filter
APPLICATIONS
• Detecting the location of Lens unit for Cellular Phone’s camera module • Detecting the watch hand for radio controlled watch • Detecting the location of CD/DVD optical pickup head • Detecting the rotation of various motors • Paper edge detection and mechanism timing detection of facsimile, copy machine etc
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER Emitter Forward Current (Continuous) Reverse Voltage (Continuous) Power Dissipation Detector Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation Coupled Total Power Dissipation Operating Temperature Storage Temperature Reflow Soldering Temperature SYMBOL IF VR PD VCEO VECO IC PC Ptot Topr Tstg Tsol RATINGS 20 6 45 16 6 10 25 60 -30 to +85 -40 to +100 260 UNIT mA V mW V V mA mW mW °C °C °C
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C)
PARAMETER Emitter Forward Voltage Reverse Current Capacitance Detector Dark Current Collector-Emitter Voltage Coupled Output Current*1 Operating Dark Current *2 Rise Time Fall Time SYMBOL VF IR Ct ICEO VCEO IO ICEOD tr tf TEST CONDITION IF=4mA VR=6V VR=0V,f=1MHz VCE=10V IC=100μA IF=4mA,VCE=2V,d=0.7mm IF=4mA,VCE=2V IO=100μA,VCE=2V,RL=1KΩ,d=0.7mm IO=100μA,VCE=2V,RL=1KΩ,d=0.7mm MIN TYP MAX 1.3 10 UNIT V μA pF μA V μA μA μs μs
0.9 — — —
16
— —
25
—
0.2
— — — —
20 20
—
155 0.5
62 — — —
— —
*1 Refer to OUTPUT CURRENT TEST CONDITION *2 Iceod may increase according to the periphery situation of the surface mounted product.
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OUTLINE (typ.)
1.7
Unit : mm
(0.15) 0.45 0.45 (0.15)
A
(0.35)
E
(0.35)
1.2
0.3
(0.15)
(0.8)
0.15
(0.34) LED Center
(0.425) PTx Center
(0.15)
K
C
0.3
0.6 A:Anode C:Collector E:Emitter 0.3 0.3 0.3 K:Cathode 0.6
0.15 0.4
0.6
PCB Pattern
OUTPUT CURRENT TEST CONDITION
The infrared signal from LED is reflected at the aluminum surface
DARK CURRENT TEST CONDITION Light Sealed Dark Box
( 0.6mm)
Aluminum Evaporation Surface
1.3 mm
IF IF Io
Iceod
VCE VCE
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RESPONSE TIME TEST CONDITION
Al evaporation surface Vcc RD INPUT
OUTPUT 90% INPUT 50%
OUTPUT RL
td tr ts tf
10%
EDGE RESPONSE TEST CONDITION
l=0mm l=0mm
0.7mm Aluminum Evaporation Surface Aluminum Evaporation Surface
0.7mm
Direction X
Direction Y
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■ TYPICAL CHARACTERISTCS
Power Dissipation vs. Temperature 100 90 80 Power Dissipation P(mW) 70 60 50 40 30 20 Forward Current IF(mA) 50 45 40 35 30 25 20 15 10 Forward Current vs. Temperature
Total Power Dissipation Total Power Dissipation
Collector Power
10
Dissipation
0 0 20 40 60 80 100 Ambient Temperature Ta(°C)
5 0 0 20 40 60 80 100 Ambient Temperature Ta(°C)
Forward Voltage vs. Forward Current 100 1.6
Forward Voltage vs. Temperature
1.4 Forward Current IF(mA) Forward Voltage VF(V)
IF=20mA
1.2
10
IF=4mA
1
1 0.0 1.0 Forward Voltage VF(V) 2.0
0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(°C)
Dark Current vs. Temperature 1000 10
Operating Dark Current vs. Temperature
10
Operating Dark Current Iceod(μA)
100 Dark Current Iceo(nA)
1
1
VCE=10V
IF=4mA , VCE=2V
0.1
0.1
0.01
0.001 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(°C)
0.01 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(°C)
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Output Current vs. Forward Current (Ta=25°C) 500 450 Relative Output Current Io/Io(25°C)(%) 400 Output Current Io(μA) 350 300 250 200 150 100 50 0 0 2 4 6 8 10 Forward Current IF(mA) 0 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(°C) 100 120 Output Current vs. Temperature
80
60
40
IF=4mA , VCE=2V
20
VCE=2V , d=0.7mm
Output Characteristics (Ta=25°C) 500 450 400 Output Current Io(μA) 350 300 250 200 150 100 0.500
Vce Saturation (Ta=25°C)
IF=10mA
Collector-Emitter Voltage Vce(V) 0.400
IF=8mA
0.300
Io=200μA Io=150μA Io=100μA Io=50μA
IF=6mA IF=4mA IF=2mA
0.200
0.100
50 0 0 1 2 3 4 5 Collector-Emitter Voltage Vce(V)
Output Current vs. Distance (Ta=25°C) 120
0.000 0.1 1.0 Forward Current IF(mA)
Output Current vs. Edge Distance (Ta=25°C) 120
10.0
IF=4mA , VCE=2V , d=0.7mm
Relative Output Current Io/Io(max.)(%) 100 Relative Output Current Io/Io(max.)(%) 100 Direction Y
IF=4mA , VCE=2V
80
80
60
60
Direction X
40
40
20
20
0 0 0.5 1 1.5 2 2.5 3 Reflector Distance d(mm)
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Edge Distance l(mm)
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Spectral Response (Ta=25°C) Emitter 120 120 Spectral Response (Ta=25°C) Detector
100 Relative Response (%) Relative Response (%)
100
IF=4mA
80
VCE=2V
80
tr
60
60
tf
40
40
td
20 20
0 700
800
900 Wavelength λ(nm)
1000
1100
0 500
600
700 900 VCE=2V 800 , Io=100μA Wavelength λ(nm)
1000
Switching Time vs. Load Resistance (Ta=25°C) 100
tf tr
Switching Time t(μs)
10
td
VCE=2V , Io=100μA
1
ts
0.1 0.1 1 Load Resistance RL(kΩ) 10
Attention: Please be aware that all data in the graph are just for reference and not for guarantee.
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■ MOUNTING METHOD NOTE Mounting was evaluated with the following profiles in our company, so there was no problem. However, confirm mounting by the condition of your company beforehand. Mounting: Twice soldering is allowed.
■ INFRARED REFLOW SOLDERING METHOD Recommended reflow soldering procedure
f 260°C 230°C 220°C 180°C 150°C e d
a : Temperature ramping rate b : Pre-heating temperature time c : Temperature ramping rate d : 220°C or higher time e : 230°C or higher time f : Peak temperature g : Temperature ramping rate
: 1 to 4°C/s : 150 to 180°C : 60 to 120s : 1 to 4°C /s : Shorter than 60s : Shorter than 40s : Lower than 260°C : 1 to 6°C /s
The temperature of the surface of mold package
Room Temp. a b c g
(NOTE1) Using reflow furnace with short wave infrared radiation heater such as halogen lamp Regarding temperature profile, please refer to those fo reflow furnace. In this case the resin surface temperature may become higher than lead terminals due to endothermic ally of black colored mold resin. Therefore, please avoid from direct exposure to mold resin. (NOTE2) Other method Such other methods of soldering as dipping the device into melted solder and vapor phase method (VPS) are not appropriate because the body of device will be heated rapidly. Therefore, these are not recommended to apply. (NOTE3) The resin gets softened right after soldering, so, the following care has to be taken Not to contact the lens surface to anything. Not to dip the device into water or any solvents.
■ FLOE SOLDERING METHOD
Flow soldering is not possible.
■ IRON SOLDERING METHOD
Iron soldering is not possible.
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■ CLEANING
Avid washing the device after soldering by reflow method.
■ IC STORAGE CONDITIONS AND ITS DURATION
(1) Temperature and humidity ranges Pack Sealing Temperature: Humidity: Pack Opening Temperature: Humidity: 5 to 40 [°C] 40 to 80 [%] 5 to 40 [°C] 40 to 60 [%]
After opening the bag, solder products within 48h. Avoid a dry environment below 40% because the products are is easily damageable by the electrical discharge. Store the products in the place where it does not create dew with the products due to a sudden change in temperature. (2) When baking, place the reel vertically to avoid load to the side. (3) Do not store the devices in corrosive-gas atmosphere. (4) Do not store the devices in a dusty place. (5) Do not expose the devices to direct rays of the sun. (6) Do not allow external forces or loads to be applied to IC’s. (7) BE careful because affixed label on the reel might be peeled off when baking.
■ BAKING
In case of keeping expect above condition be sure to apply baking. (Heat-resistant tape) Baking method: Ta=60°C, 48 to 72h, Three times baking is allowed Ta=100°C, 2 to 6h, Three times baking is allowed
■ STORAGE DURATION
Within a year after delivering this device. For the products stored longer than a year, confirm their terminals and solderability before they are used.
■ APPLICATION NOTES
(1) Attention in handling Treat not to touch the lens surface. Avoid dust and any other foreign materials on the lens surface such as point, bonding material, etc. Never to apply reverse voltage (VEC) of more than 6V on the photo transistor when measuring the characteristics or adjusting the system. If applied, it causes to lower the sensitivity. When mounting, special care has to be taken on the mounting position and tilting of the device because it is very important to place the device to the optimum position to the object.
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■ PACKING SPECIFICATION
PACKING DIMENTIONS UNIT : mm Drawing direction Insert direction
P2 P0
φ D0
T
SYMBOL A B D0 D1
DIMENSION 1.35 ±0.05 1.90 ±0.05 1.50 1.00
+ 0.10 0 +0.20 -0.0
REMARKS
BOTTOM DIMENSION BOTTOM DIMENSION
E
E F P0 P1 P2 T0 T1
1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 4.00 ±0.10 2.00 ±0.05 0.20 ±0.05 0.76 ±0.05 8.00 ±0.10 5.40 ±0.10
THICKNESS 0.1MAX
W1
(TE1)
F B W
P1
A
φ D1
T1
W0 W1
* Carrier tape material : Polycarbonate(antistatic) Cover tape material : Polyester(antistatic)
■ Taping Strength
Pull up the cover tape from the carrier tape, and when the opening angle comes around 10 to 15 , and the peeling-off strength is to be within the power of 20 to 70g.
■ Packaging
1) The taped products are to be rolled up on the taping reel as on the drawing. 2) Rolling up specification 2-1) Start rolling : Carrier tape open space more than 20 Pieces. 2-2) End of rolling : Carrier tape open space more than 20 Pieces, and 2 round of reel space at the cover tape only. 3) Taping quantity : 2,000 Pieces 4) Seal off after putting each reels in a damp proof bag with silica gel.
SYMBOL
DIMENSION φ180 ±1.0 φ60 ±1.0 φ13 ±0.2 φ21 ±0.8 2.0 ±0.5 9.5 ±0.5 14.5 ±0.5
D C
E
A B C D E W0 W1
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
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