SM5073E1S

SM5073 series VCXO ICs with Built-in Varicap OVERVIEW The SM5073 series are VCXO ICs with built-in varicap diode. They use a recently developed negative-resistance switching oscillation circuit, at oscillation startup and during normal oscillation, for both good oscillation startup characteristics and wide pullrange. Furthermore, it employs a CMOS process varicap diode, and also features all the necessary VCXO structure circuit components on a single chip, forming a VCXO with just the connection of an external crystal. FEATURES I I PACKAGE DIMENSIONS (Unit: mm) I I I I I I I I I 3.0 to 3.6V supply voltage range 10MHz to 60MHz operating frequency (varies with version) Uses negative-resistance switching function Varicap diode built-in Frequency divider built-in (varies with version: fO, fO/2, fO/4, fO/8, fO/16, fO/32) CMOS output level 50 ± 10% output duty 6mA (min) output drive capability 15pF output load capacitance CL Standby function High impedance in standby mode (oscillator continues running) Package: 8-pin SOP (SM5073××S) 0.15 + 0.1 − 0.05 4.4 0.2 6.2 0.3 0.695typ 5.2 0.3 0.05 0.05 1.5 0.1 1.27 0.4 0.2 APPLICATIONS I I I I 0.10 0.4 0.1 0.12 M 0 to 10 VCXO modules Communications application Networking application Broadcasting application SERIES LINEUP Version SM5073A×S SM5073B×S SM5073C×S SM5073D×S SM5073E×S SM5073F×S Typical oscillation frequency1 [MHz] 16 23 30 37 44 51 fO fO/2 fO/4 fO/8 fO/16 fO/32 Output frequency SM5073×1S SM5073×2S2 SM5073×3S2 SM5073×4S2 SM5073×5S2 SM5073×6S2 1. The typical oscillation frequency is the oscillation frequency criteria for use when selecting the device version. Note that the oscillation characteristics and pullability vary with the crystal used and the mounting conditions. Even for the same frequency, the optimal version can vary with crystal characteristics, so careful evaluation should be exercised when selecting the device version. 2. These versions are produced after receiving a purchase order. Please ask our Sales & Marketing section for further detail. ORDERING INFORMATION Device SM5073××S Package 8-pin SOP SEIKO NPC CORPORATION —1 SM5073 series PINOUT (Top view) XTN VC INHN VSS 1 2 3 4 8 7 6 5 XT VDD NC Q PIN DESCRIPTION Number 1 2 3 4 5 6 7 8 Name XTN VC INHN VSS Q NC VDD XT I/O O I I – O – – I Description Amplifier output pin Oscillation frequency control voltage input pin Output state control voltage input pin (−) supply pin Output pin No connection (+) supply pin Amplifier input pin Crystal connection pins. Crystal is connected between XT and XTN. Output frequency determined by internal circuit to one of fO, fO/2, fO/4, fO/8, fO/16, fO/32 Function Crystal connection pins. Crystal is connected between XT and XTN. Positive polarity (frequency increases with increasing voltage) High-impedance output when LOW, pull-up resistor built-in SEIKO NPC CORPORATION —2 SM5073 series BLOCK DIAGRAM Rf CG 1/2 1/2 1/2 1/2 1/2 XT RD CV CC CD Q XTN RB1 VDD RB2 VC RUP VSS INHN Note. ESD of XT pin is inferior to other pins. ESD of all pins excluding XT pin is equivalent to that of our other oscillator products. VC pin has no protection circuit at VDD side. (See figure below.) VC Internal circuit SEIKO NPC CORPORATION —3 SM5073 series ABSOLUTE MAXIMUM RATINGS VSS = 0V unless otherwise noted. Parameter Supply voltage range Input voltage range Output voltage range Operating temperature range Storage temperature range Output current Power dissipation 1. It should not exceed + 7.0V. Symbol VDD All input pins excluding VC pin VIN VOUT Topr TSTG IOUT PD VC pin Conditions Rating −0.5 to 7.0 −0.5 to VDD + 0.5 −0.5 to VDD + 2.51 Unit V V V V °C °C mA mW −0.5 to VDD + 0.5 −40 to +85 −55 to +125 20 500 RECOMMENDED OPERATING CONDITIONS VSS = 0V, f = 10MHz to 60MHz, CL ≤ 15pF unless otherwise noted. Rating Parameter Operating supply voltage Input voltage Operating temperature Symbol VDD VIN TOPR Conditions Min 3.0 VSS –40 Typ – – – Max 3.6 VDD +85 V V °C Unit SEIKO NPC CORPORATION —4 SM5073 series ELECTRICAL CHARACTERISTICS SM5073A×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN SM5073A1S Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 16MHz Measurement circuit 3 Design value. A monitor pattern on a wafer is tested. Measurement circuit 4 Design value. A monitor pattern on a wafer is tested. Design value. A monitor pattern on a wafer is tested. VC = 0.3V VC = 3.0V SM5073A2S SM5073A3S SM5073A4S to 6S INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.67 100 50 11.0 2.4 25.5 Design value. A monitor pattern on a wafer is tested. 34 8.5 Typ 2.75 0.2 – – – – 8 7.5 7 7 100 300 0.96 200 100 14.4 4.0 30 40 10 Max – 0.4 10 10 – 0.3VDD 23 22.5 22 22 180 540 1.25 360 180 17.8 5.6 34.5 46 11.5 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit CV Built-in capacitance CG CD CC SEIKO NPC CORPORATION —5 SM5073 series SM5073B×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN SM5073B1S Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 23MHz Measurement circuit 3 Design value. A monitor pattern on a wafer is tested. Measurement circuit 4 Design value. A monitor pattern on a wafer is tested. Design value. A monitor pattern on a wafer is tested. VC = 0.3V VC = 3.0V SM5073B2S SM5073B3S SM5073B4S to 6S INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.50 100 50 11.0 2.3 25.5 Design value. A monitor pattern on a wafer is tested. 34 12.7 Typ 2.75 0.2 – – – – 9 8 7.5 7.5 100 300 0.72 200 100 14.6 4.0 30 40 15 Max – 0.4 10 10 – 0.3VDD 25 24 23.5 23.5 180 540 0.94 360 180 18.2 5.7 34.5 46 17.3 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit CV Built-in capacitance CG CD CC SEIKO NPC CORPORATION —6 SM5073 series SM5073C×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN SM5073C1S Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 30MHz Measurement circuit 3 Design value. A monitor pattern on a wafer is tested. Measurement circuit 4 Design value. A monitor pattern on a wafer is tested. Design value. A monitor pattern on a wafer is tested. VC = 0.3V VC = 3.0V SM5073C2S SM5073C3S SM5073C4S to 6S INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.50 100 50 11.0 2.3 25.5 Design value. A monitor pattern on a wafer is tested. 25.5 29.7 Typ 2.75 0.2 – – – – 10 9 8.5 8 100 300 0.72 200 100 14.6 4.0 30 30 35 Max – 0.4 10 10 – 0.3VDD 28 27 26.5 26 180 540 0.94 360 180 18.2 5.7 34.5 34.5 40.3 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit CV Built-in capacitance CG CD CC SEIKO NPC CORPORATION —7 SM5073 series SM5073D×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN SM5073D1S Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 37MHz Measurement circuit 3 Design value. A monitor pattern on a wafer is tested. Measurement circuit 4 Design value. A monitor pattern on a wafer is tested. Design value. A monitor pattern on a wafer is tested. VC = 0.3V VC = 3.0V SM5073D2S SM5073D3S SM5073D4S to 6S INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.25 100 50 11.0 2.3 25.5 Design value. A monitor pattern on a wafer is tested. 25.5 34 Typ 2.75 0.2 – – – – 11 9.5 9 8.5 100 300 0.36 200 100 14.6 4.0 30 30 40 Max – 0.4 10 10 – 0.3VDD 30 28.5 28 27.5 180 540 0.47 360 180 18.2 5.7 34.5 34.5 46 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit CV Built-in capacitance CG CD CC SEIKO NPC CORPORATION —8 SM5073 series SM5073E×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN SM5073E1S Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 44MHz Measurement circuit 3 Design value. A monitor pattern on a wafer is tested. Measurement circuit 4 Design value. A monitor pattern on a wafer is tested. Design value. A monitor pattern on a wafer is tested. VC = 0.3V VC = 3.0V SM5073E2S SM5073E3S SM5073E4S to 6S INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.25 100 50 11.0 2.3 21.2 Design value. A monitor pattern on a wafer is tested. 21.2 42.5 Typ 2.75 0.2 – – – – 12 10.5 9.5 9 100 300 0.36 200 100 14.6 4.0 25 25 50 Max – 0.4 10 10 – 0.3VDD 32 30.5 29.5 29 180 540 0.47 360 180 18.2 5.7 28.8 28.8 57.5 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit CV Built-in capacitance CG CD CC SEIKO NPC CORPORATION —9 SM5073 series SM5073F×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage Output leakage current HIGH-level input voltage LOW-level input voltage Symbol VOH VOL IZ VIH VIL Conditions Min Q: Measurement circuit 1, IOH = 6mA Q: Measurement circuit 1, IOL = 6mA Q: Measurement circuit 6, INHN = LOW INHN INHN SM5073F1S Current consumption IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 51MHz Measurement circuit 3 Design value. A monitor pattern on a wafer is tested. Measurement circuit 4 Design value. A monitor pattern on a wafer is tested. Design value. A monitor pattern on a wafer is tested. VC = 0.3V VC = 3.0V SM5073F2S SM5073F3S SM5073F4S to 6S INHN pull-up resistance RUP Rf RD Built-in resistance RB1 RB2 VOH = VDD VOL = VSS 2.5 – – – 0.7VDD – – – – – 50 150 0.25 100 50 9.5 2.0 17 Design value. A monitor pattern on a wafer is tested. 17 42.5 Typ 2.75 0.2 – – – – 13 11 10 9.5 100 300 0.36 200 100 12.5 3.5 20 20 50 Max – 0.4 10 10 – 0.3VDD 35 33 32 31.5 180 540 0.47 360 180 15.5 5.0 23 23 57.5 V V µA µA V V mA mA mA mA kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF Unit CV Built-in capacitance CG CD CC SEIKO NPC CORPORATION —10 SM5073 series SWITCHING CHARACTERISTICS VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted Rating1 Parameter Symbol Conditions Min Output rise time Output fall time Output duty cycle Output disable delay time Output enable delay time tr1 tf1 Duty tPLZ tPZL Measurement circuit 2, load circuit 1, 0.1VDD → 0.9VDD, CL = 15pF Measurement circuit 2, load circuit 1, 0.9VDD → 0.1VDD, CL = 15pF Measurement circuit 2, load circuit 1, VDD = 3.3V, Ta = 25°C, CL = 15pF Measurement circuit 5, load circuit 1, VDD = 3.3V, Ta = 25°C, CL ≤ 15pF – – 40 – – Typ 2.5 2.5 50 – – Max 6 6 60 100 100 ns ns % ns ns Unit 1. The switching characteristics apply for normal output waveforms. Note that, depending on the matching of the SM5073 series version and crystal, normal waveform output may not be continuous. Current consumption and Output waveform with NPC’s standard crystal C0 f [MHz] 30 R1 [Ω] 7.06 L1 [mH] 2.25 C1 [fF] 12.5 C0 [pF] 3.11 L1 C1 R1 FUNCTIONAL DESCRIPTION Standby Function When INHN goes LOW, the Q output pin becomes high impedance. INHN HIGH (or open) LOW Q Any fO, fO/2, fO/4, fO/8, fO/16, or fO/32 High impedance Oscillator Operating Operating SEIKO NPC CORPORATION —11 SM5073 series MEASUREMENT CIRCUITS Measurement Circuit 1 Measurement Circuit 4 R3 VDD When measuring VOL Signal Generator C1 XT R1 VC VSS Q R2 IRB1 A VC RB1 = VDD IRB1 XTN VDD When measuring VOH Q output VDD VOH 0V VDD VOL 0V VSS Q output XT input signal: 2.5Vp-p, 10MHz, sine wave C1 = 0.001µF, R1 = 50Ω, R2 = 417Ω, R3 = 434Ω, VC = 1.65V Measurement Circuit 2 Measurement Circuit 5 A VDD XT X'tal XTN VC VSS Q INHN Signal Generator C1 XT R1 VC VDD INHN Q VSS VC = 1.65V, INHN = open, crystal oscillation XT input signal: 2.5Vp-p, 10MHz, sine wave C1 = 0.001µF, R1 = 50Ω, VC = 1.65V Measurement Circuit 3 Measurement Circuit 6 RUP = VDD VDD IRUP VDD INHN INHN VC VSS A IRUP VC VSS Q A VC = 1.65V VC = 1.65V SEIKO NPC CORPORATION —12 SM5073 series Load Circuit 1 Q output CL (Including probe capacitance) Switching Time Measurement Waveform Output duty level, tr, tf 0.9V DD 0.1V DD TW 0.9V DD 0.1V DD DUTY measurement voltage (0.5V DD ) Q output tr1 Output duty cycle tf1 Q output TW T DUTY measurement voltage (0.5V DD) DUTY= TW/ T 100 (%) Output Enable/Disable Delay Times INHN VIH VIL tPLZ Q output INHN input waveform tr = tf tPZL 10ns SEIKO NPC CORPORATION —13 SM5073 series Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: sales@npc.co.jp NC0213BE 2006.04 SEIKO NPC CORPORATION —14