WF5027BT-4

WF5027 series Crystal Oscillator Module ICs OVERVIEW The WF5027 series are miniature crystal oscillator module ICs. The oscillator circuit stage has voltage regulator drive, significantly reducing current consumption and crystal current, compared with existing devices, and significantly reducing the oscillator characteristics supply voltage dependency. There are 3 pad layout package options available for optimized mounting, making these devices ideal for miniature crystal oscillators. FEATURES I I I I I Wide range of operating supply voltage: 1.60 to 3.63V Regulated voltage drive oscillator circuit for reduced power consumption and crystal drive current Optimized low crystal drive current oscillation for miniature crystal units 3 pad layout options for mounting • 5027A×, M×, Q× series: for Flip Chip Bonding • 5027B×, N×, R× series: for Wire Bonding (type I) • 5027C×, P×, S× series: for Wire Bonding (type II) Recommended oscillation frequency range For fundamental oscillator • Low frequency version: 20MHz to 60MHz • High frequency version: 60MHz to 100MHz For 3rd overtone oscillator • Low frequency version: 40MHz to 110MHz • High frequency version*1: 110MHz to 180MHz *1: under development I I I I I I I I Multi-stage frequency divider for low-frequency output support: 0.9MHz (min) Frequency divider built-in (for fundamental oscillator) • Selectable by version: fO, fO/2, fO/4, fO/8, fO/16, fO/32, fO/64 −40 to 85°C operating temperature range Standby function • High impedance in standby mode, oscillator stops CMOS output duty level (1/2VDD) 50 ± 5% output duty 15pF output drive capability Wafer form (WF5027××) Chip form (CF5027××) APPLICATIONS I 3.2 × 2.5, 2.5 × 2.0, 2.0 × 1.6 size miniature crystal oscillator modules ORDERING INFORMATION Device WF5027××–4 CF5027××–4 Package Wafer form Chip form SEIKO NPC CORPORATION —1 WF5027 series SERIES CONFIGURATION For Fundamental Oscillator Operating Output drive supply capability voltage range [mA] [V] PAD layout Recommended oscillation frequency range*1 [MHz] 20 to 60 60 to 100 20 to 60 60 to 100 20 to 60 60 to 100 Version*2 fO output 5027A1 5027AP 5027B1 5027BP 5027C1 5027CP fO/2 output 5027A2 5027AQ 5027B2 5027BQ 5027C2 5027CQ fO/4 output 5027A3 5027AR 5027B3 5027BR 5027C3 5027CR fO/8 output 5027A4 5027AS 5027B4 5027BS 5027C4 5027CS fO/16 output 5027A5 5027AT 5027B5 5027BT 5027C5 5027CT fO/32 output 5027A6 5027AV 5027B6 5027BV 5027C6 5027CV fO/64 output 5027A7 5027AW 5027B7 5027BW 5027C7 5027CW Flip Chip Bonding 1.60 to 3.63 ±4 Wire Bonding Type I Wire Bonding Type II *1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. Wafer form devices have designation WF5027×× and chip form devices have designation CF5027××. For 3rd Overtone Oscillator Operating Output drive supply capability voltage range [mA] [V] Recommended oscillation frequency range*1 [MHz] and version*2 PAD layout 40 to 50 Flip Chip Bonding 1.60 to 3.63 ±8 Wire Bonding Type I Wire Bonding Type II 5027MA 5027NA 5027PA 50 to 65 5027MB 5027NB 5027PB 65 to 85 5027MC 5027NC 5027PC 85 to 110 5027MD 5027ND 5027PD 110 to 145 145 to 180 (5027QE) (5027RE) (5027SE) (5027QF) (5027RF) (5027SF) *1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. Wafer form devices have designation WF5027×× and chip form devices have designation CF5027××. Versions in parentheses ( ) are under development. VERSION NAME Device WF5027××–4 Package Wafer form Version name WF5027 Form WF: Wafer form CF: Chip (Die) form −4 Oscillation frequency range, frequency divider function Pad layout type A, M, Q: for Flip Chip Bonding B, N, R: for Wire Bonding (type I) C, P, S: for Wire Bonding (type II) CF5027××–4 Chip form SEIKO NPC CORPORATION —2 WF5027 series PAD LAYOUT (Unit: µm) I 5027A×, M×, Q× (for Flip Chip Bonding) (750,690) VSS 5 6 1 (0,0) XT X 2 XTN 4 3 Q VDD I 5027B×, N×, R× (for Wire Bonding (type I)) (750,690) Q 5 6 1 (0,0) XTN X 2 XT 4 3 VSS INHN I 5027C×, P×, S× (for Wire Bonding (type II)) (750,690) VDD 5 6 1 (0,0) XT X 2 XTN 4 3 Q VSS Y INHN Y VDD Y INHN Chip size: 0.75 × 0.69mm Chip thickness: 130 ± 15µm PAD size: 90µm Chip base: VSS level Chip size: 0.75 × 0.69mm Chip thickness: 130 ± 15µm PAD size: 90µm Chip base: VSS level Chip size: 0.75 × 0.69mm Chip thickness: 130 ± 15µm PAD size: 90µm Chip base: VSS level PAD DIMENSIONS Pad dimensions [µm] Pad No. X 1 2 3 4 5 6 229 520 636 636 114 114 Y 114 114 304 531 531 304 PIN DESCRIPTION Pad No. 5027A× 5027B× 5027C× 5027M× 5027N× 5027P× 5027Q× 5027R× 5027S× 1 2 3 4 5 6 2 1 6 5 4 3 1 2 5 4 3 6 Pin Name Description XT XTN VDD Q VSS INHN Amplifier input Amplifier output (+) supply voltage Output (–) ground Output state control input Crystal connection pins. Crystal is connected between XT and XTN. – Output frequency determined by internal circuit to one of fO, fO/2, fO/4, fO/8, fO/16, fO/32, fO/64 – High impedance when LOW (oscillator stops). Power-saving pull-up resistor built-in. BLOCK DIAGRAM VDD VSS INHN VRG RF DIVIDER CMOS Q XT RD CG CD XTN SEIKO NPC CORPORATION —3 WF5027 series VERSION DISCRIMINATION INTERNAL COMPONENTS The WF5027 series device version is not determined solely by the mask pattern, but can also be determined by the trimming of internal trimming fuses. I Version determined by laser trimming: These chips are produced from a common device by the laser trimming of fuses corresponding to the ordered version, shown in table 1. These devices are shipped for electrical characteristics testing. Laser-trimmed versions are identified externally by the combination of the version name marking (1) and the locations of trimmed fuses (2). I Version determined by mask pattern: These chips are fabricated using the mask corresponding to the ordered version, and do not require trimming. Mask-fabricated versions are identified externally by the version name marking (1) only. Since the WF5027 series devices are manufactured using 2 methods, there are 2 types of IC chip available (identified externally) for the same version name. The identification markings for all WF5027 series device versions is shown in table 2. (750,690) (1) Version code on die 5027 NPC (2) Trimming fuses F1 F2 F3 F4 F5 F6 F7 F8 F9 SEIKO NPC CORPORATION —4 WF5027 series Table 1. Version and trimming fuses (for fundamental oscillator) Trimming fuse number*1 Version F1 5027×1 5027×2 5027×3 5027×4 5027×5 5027×6 5027×7 5027×P 5027×Q 5027×R 5027×S 5027×T 5027×V 5027×W – × – × – × – – × – × – × – F2 – – × × – – × – – × × – – × F3 – – – – × × × – – – – × × × F4 – – – – – – – × × × × × × × F5 – – – – – – – × × × × × × × I 5027×1 trimming fuses (untrimmed) I 5027×2 trimming fuses (F1 link trimmed) I 5027×3 trimming fuses (F2 link trimmed) I 5027×4 trimming fuses (F1 and F2 links trimmed) *1. –: untrimmed, ×: trimmed, F6 to F9 not used : trimmed device Table 2. Version and trimming fuses (for 3rd overtone oscillator) Version 5027×A 5027×B 5027×C 5027×D 5027×E 5027×F Recommended oscillation frequency range*1 [MHz] 40 to 50 50 to 65 65 to 85 85 to 110 (110 to 145) TBD (145 to 180) Trimming fuse number*2 F1 – – × – F2 – × × × F3 – – – × F4 – – – × F5 – – × × F6 – – – – F7 × – × × F8 × × – – F9 × × × × *1. Values in parentheses ( ) are provisional only. *2. –: untrimmed, ×: trimmed SEIKO NPC CORPORATION —5 WF5027 series Table 3. Version identification by version name and chip markings (for fundamental oscillator) Version set by trimming fuses Version name Version code on chip AX AX AX AX AX AX AX AX AX AX AX AX AX AX BX BX BX BX BX BX BX BX BX BX BX BX BX BX CX CX CX CX CX CX CX CX CX CX CX CX CX CX Trimming fuses*1 F1 − × − × − × − − × − × − × − − × − × − × − − × − × − × − − × − × − × − − × − × − × − F2 − − × × − − × − − × × − − × − − × × − − × − − × × − − × − − × × − − × − − × × − − × F3 − − − − × × × − − − − × × × − − − − × × × − − − − × × × − − − − × × × − − − − × × × F4 − − − − − − − × × × × × × × − − − − − − − × × × × × × × − − − − − − − × × × × × × × F5 − − − − − − − × × × × × × × − − − − − − − × × × × × × × − − − − − − − × × × × × × × Untrimmed F6 F7 F8 F9 Version set by mask pattern Version code on chip AX A2 A3 A4 A5 A6 A7 AP AQ AR AS AT AV AW BX B2 B3 B4 B5 B6 B7 BP BQ BR BS BT BV BW CX C2 C3 C4 C5 C6 C7 CP CQ CR CS CT CV CW Untrimmed Trimming fuses F1 to F9 5027A1 5027A2 5027A3 5027A4 5027A5 5027A6 5027A7 5027AP 5027AQ 5027AR 5027AS 5027AT 5027AV 5027AW 5027B1 5027B2 5027B3 5027B4 5027B5 5027B6 5027B7 5027BP 5027BQ 5027BR 5027BS 5027BT 5027BV 5027BW 5027C1 5027C2 5027C3 5027C4 5027C5 5027C6 5027C7 5027CP 5027CQ 5027CR 5027CS 5027CT 5027CV 5027CW *1. −: untrimmed, ×: trimmed SEIKO NPC CORPORATION —6 WF5027 series Table 4. Version identification by version name and chip markings (for 3rd overtone oscillator) Version set by trimming fuses Version name Version code on chip F1 5027MA 5027MB 5027MC 5027MD 5027NA 5027NB 5027NC 5027ND 5027PA 5027PB 5027PC 5027PD (5027QE) (5027QF) (5027RE) (5027RF) (5027SE) (5027SF) *1. −: untrimmed, ×: trimmed MX MX MX MX NX NX NX NX PX PX PX PX − − × − − − × − − − × − F2 − × × × − × × × − × × × F3 − − − × − − − × − − − × Trimming fuses*1 F4 − − − × − − − × − − − × F5 − − × × − − × × − − × × F6 − − − − − − − − − − − − F7 × − × × × − × × × − × × F8 × × − − × × − − × × − − F9 × × × × × × × × × × × × MA MB MC MD NA NB Untrimmed NC ND PA PB PC PD Version set by mask pattern Version code on chip Trimming fuses F1 to F9 TBD SEIKO NPC CORPORATION —7 WF5027 series SPECIFICATIONS Absolute Maximum Ratings VSS = 0V Parameter Supply voltage range Input voltage range Output voltage range Storage temperature range Output current Symbol VDD VIN VOUT TSTG IOUT Condition Between VDD and VSS Input pins Output pins Wafer form Q pin Rating −0.5 to +4.0 −0.5 to VDD + 0.5 −0.5 to VDD + 0.5 −65 to +150 ± 20 Unit V V V °C mA Recommended Operating Conditions For Fundamental Oscillator VSS = 0V Rating Parameter Operating supply voltage Input voltage Operating temperature Oscillation frequency*1 Symbol VDD VIN TOPR fO 5027×1 to 5027×7 5027×P to 5027×W CL ≤ 15pF 5027×1 to 5027×7 5027×P to 5027×W CL ≤ 15pF Input pins Condition min 1.60 VSS −40 20 60 0.9 0.9 typ – – – – – – – max 3.63 VDD +85 60 100 60 100 V V °C MHz MHz MHz MHz Unit Output frequency fOUT *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. For 3rd Overtone Oscillator VSS = 0V Rating Parameter Operating supply voltage Input voltage Operating temperature Symbol VDD VIN TOPR 5027×A Oscillation frequency*1 fO 5027×B 5027×C 5027×D CL ≤ 15pF Input pins Condition min 1.60 VSS −40 40 50 65 85 typ – – – – – – – max 3.63 VDD +85 50 65 85 110 V V °C MHz MHz MHz MHz Unit *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. SEIKO NPC CORPORATION —8 WF5027 series Electrical Characteristics DC Characteristics For Fundamental Oscillator: Low frequency version (5027×1 to 5027×7) VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 3, IOH = – 4mA Q: Measurement cct 3, IOL = 4mA INHN, Measurement cct 4 INHN, Measurement cct 4 Q: Measurement cct 5, INHN = LOW 5027×1 (fO), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 48MHz 5027×2 (fO/2), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 24MHz 5027×3 (fO/4), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 12MHz 5027×4 (fO/8), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 6MHz 5027×5 (fO/16), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 3MHz 5027×6 (fO/32), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 1.5MHz 5027×7 (fO/64), Measurement cct 1, no load, INHN = open, fO = 60MHz, fOUT = 0.94MHz Standby current INHN pull-up resistance Oscillator feedback resistance Oscillator capacitance IST RUP1 RUP2 Rf CG CD Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. Measurement cct 1, INHN = LOW Measurement cct 6 30 50 4.8 8 70 100 6 10 150 200 7.2 12 VOH = VDD VOL = VSS VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD – 0.4 – 0.7VDD – – – 10 – – – – – – – – – – – – – – – – – – – – – – 0.4 typ – – – – – – 1.6 1.3 1.0 1.5 1.2 0.9 1.3 1.0 0.8 1.1 0.9 0.75 1.05 0.85 0.7 1.0 0.85 0.7 1.0 0.85 0.7 – 1.5 max – 0.4 – 0.3VDD 10 – 2.4 2.0 1.5 2.3 1.8 1.4 2.0 1.5 1.2 1.7 1.4 1.15 1.6 1.3 1.1 1.5 1.3 1.1 1.5 1.3 1.1 10 8 V V V V µA µA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA µA MΩ kΩ kΩ pF pF Unit Current consumption*1 IDD *1. The consumption current IDD (CL) with a load capacitance (CL) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency. IDD (CL) [mA] = IDD [mA] + CL [pF] × VDD [V] × fOUT [MHz] × 10–3 SEIKO NPC CORPORATION —9 WF5027 series For Fundamental Oscillator: High frequency version (5027×P to 5027×W) VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage HIGH-level input voltage LOW-level input voltage Output leakage current Symbol VOH VOL VIH VIL IZ Condition min Q: Measurement cct 3, IOH = – 4mA Q: Measurement cct 3, IOL = 4mA INHN, Measurement cct 4 INHN, Measurement cct 4 Q: Measurement cct 5, INHN = LOW 5027×P (fO), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 80MHz 5027×Q (fO/2), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 40MHz 5027×R (fO/4), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 20MHz 5027×S (fO/8), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 10MHz 5027×T (fO/16), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 5MHz 5027×V (fO/32), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 2.5MHz 5027×W (fO/64), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 1.25MHz Standby current INHN pull-up resistance Oscillator feedback resistance Oscillator capacitance IST RUP1 RUP2 Rf CG CD Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. Measurement cct 1, INHN = LOW Measurement cct 6 30 50 1.6 3.2 70 100 2 4 150 200 2.4 4.8 VOH = VDD VOL = VSS VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD – 0.4 – 0.7VDD – – – 10 – – – – – – – – – – – – – – – – – – – – – – 0.4 typ – – – – – – 2.5 2.0 1.6 2.4 1.9 1.5 1.8 1.5 1.2 1.7 1.4 1.1 1.6 1.3 1.0 1.5 1.2 1.0 1.5 1.2 1.0 – 1.5 max – 0.4 – 0.3VDD 10 – 3.8 3.0 2.4 3.6 2.9 2.3 2.7 2.3 1.6 2.6 2.1 1.7 2.4 2.0 1.5 2.3 1.8 1.5 2.3 1.8 1.5 10 8 V V V V µA µA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA µA MΩ kΩ kΩ pF pF Unit Current consumption*1 IDD *1. The consumption current IDD (CL) with a load capacitance (CL) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency. IDD (CL) [mA] = IDD [mA] + CL [pF] × VDD [V] × fOUT [MHz] × 10–3 SEIKO NPC CORPORATION —10 WF5027 series For 3rd Overtone Oscillator (5027×A to 5027×D) VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol Condition min Q: Measurement cct 3, IOH = – 8mA, VDD = 2.25 to 3.63V Q: Measurement cct 3, IOH = – 4mA, VDD = 1.60 to 2.25V Q: Measurement cct 3, IOL = 8mA, VDD = 2.25 to 3.63V Q: Measurement cct 3, IOL = 4mA, VDD = 1.60 to 2.25V INHN, Measurement cct 4 INHN, Measurement cct 4 Q: Measurement cct 5, INHN = LOW 5027×A, Measurement cct 1, no load, INHN = open, fO = 48MHz VOH = VDD VOL = VSS VDD = 3.3V VDD = 2.5V VDD = 1.8V 5027×B, Measurement cct 1, no load, INHN = open, fO = 54MHz Current consumption*1 IDD 5027×C, Measurement cct 1, no load, INHN = open, fO = 85MHz VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD = 3.3V VDD = 2.5V VDD = 1.8V 5027×D, Measurement cct 1, no load, INHN = open, fO = 100MHz Standby current INHN pull-up resistance IST RUP1 RUP2 5027×A Oscillator feedback resistance Rf 5027×B 5027×C 5027×D 5027×A CG Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 5027×B 5027×C 5027×D 5027×A CD Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 5027×B 5027×C 5027×D Measurement cct 1, INHN = LOW Measurement cct 6 30 2.6 2.2 1.9 1.9 9.6 6.4 4.8 1.6 9.6 9.6 6.4 4.8 70 3.8 3.2 2.8 2.8 12 8 6 2 12 12 8 6 150 5.0 4.2 3.7 3.7 14.4 9.6 7.2 2.4 14.4 14.4 9.6 7.2 VDD = 3.3V VDD = 2.5V VDD = 1.8V VDD – 0.4 VDD – 0.4 – – 0.7VDD – – – 10 – – – – – – – – – – – – – 0.4 typ – – – – – – – – 3.6 3.0 2.6 3.8 3.2 2.8 4.8 4.0 3.4 5.3 4.4 3.6 – 1.5 max – – 0.4 0.4 – 0.3VDD 10 – 5.4 4.5 3.9 5.7 4.8 4.2 7.2 6.0 5.1 8.0 6.6 5.4 10 8 V V V V V V µA µA mA mA mA mA mA mA mA mA mA mA mA mA µA MΩ kΩ kΩ kΩ kΩ kΩ pF pF pF pF pF pF pF pF Unit HIGH-level output voltage VOH LOW-level output voltage VOL HIGH-level input voltage LOW-level input voltage Output leakage current VIH VIL IZ Oscillator capacitance *1. The consumption current IDD (CL) with a load capacitance (CL) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency. IDD (CL) [mA] = IDD [mA] + CL [pF] × VDD [V] × fOUT [MHz] × 10–3 SEIKO NPC CORPORATION —11 WF5027 series AC Characteristics For Fundamental Oscillator (5027×1 to 5027×7, 5027×P to 5027×W) VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Parameter Symbol tr1 tr2 tf1 tf2 Duty tOD Condition Measurement cct 1, CL = 15pF, 0.1VDD to 0.9VDD Measurement cct 1, CL = 15pF, 0.9VDD to 0.1VDD VDD = 2.25 to 3.36V VDD = 1.60 to 2.25V VDD = 2.25 to 3.36V VDD = 1.60 to 2.25V Rating min – – – – 45 – typ 2.0 3.0 2.0 3.0 50 – max 4.5 5.0 4.5 5.0 55 50 Unit ns ns ns ns % µs Output rise time Output fall time Output duty cycle Output disable delay time Measurement cct 1, Ta = 25°C, CL = 15pF Measurement cct 2, Ta = 25°C, CL ≤ 15pF For 3rd Overtone Oscillator (5027×A to 5027×D) VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Parameter Symbol tr1 tr2 tf1 tf2 Duty tOD Condition Measurement cct 1, CL = 15pF, 0.1VDD to 0.9VDD Measurement cct 1, CL = 15pF, 0.9VDD to 0.1VDD VDD = 2.25 to 3.36V VDD = 1.60 to 2.25V VDD = 2.25 to 3.36V VDD = 1.60 to 2.25V Rating min – – – – 45 – typ 1.2 1.6 1.2 1.6 50 – max 3.0 4.0 3.0 4.0 55 50 Unit ns ns ns ns % µs Output rise time Output fall time Output duty cycle Output disable delay time Measurement cct 1, Ta = 25°C, CL = 15pF Measurement cct 2, Ta = 25°C, CL ≤ 15pF Timing chart 0.9VDD 0.9VDD Q 0.1VDD TW T 0.1VDD DUTY measurement voltage (0.5V DD ) DUTY= TW/ T 100 (%) tr tf Figure 1. Output switching waveform VIH VIL INHN tOD 0.1V tSTR Q Normal operation Output stopped Hi-Z* Normal operation When INHN goes HIGH to LOW, the Q output goes HIGH once and then becomes high impedance. When INHN goes LOW to HIGH, the Q output goes from high impedance to normal output operation when the oscillation starts (oscillation is detected). *) The high-impedance interval in the figure is shown as a LOW level due to the 1kΩ pull-down resistor connected to the Q pin (see "Measurement circuit 2" in the "Measurement Circuits" section). Figure 2. Output disable and oscillation start timing chart SEIKO NPC CORPORATION —12 WF5027 series FUNCTIONAL DESCRIPTION Standby Function When INHN goes LOW, the Q output becomes high impedance. INHN HIGH (or open) LOW Q Frequency output High impedance Oscillator Normal operation Stopped Power-saving Pull-up Resistor The INHN pin pull-up resistance RUP1 or RUP2 changes in response to the input level (HIGH or LOW). When INHN is tied LOW level, the pull-up resistance is large (RUP1), reducing the current consumed by the resistance. When INHN is left open circuit, the pull-up resistance is small (RUP2), which increases the input susceptibility to external noise. However, the pull-up resistance ties the INHN pin HIGH level to prevent external noise from unexpectedly stopping the output. Oscillation Detector Function The WF5027 series also feature an oscillation detector circuit. This circuit functions to disable the outputs until the oscillator circuit starts and oscillation becomes stable. This alleviates the danger of abnormal oscillator output at oscillator start-up when power is applied or when INHN is switched. SEIKO NPC CORPORATION —13 WF5027 series MEASUREMENT CIRCUITS Measurement cct 1 Measurement parameter: IDD, IST, Duty, tr , tf Measurement cct 4 Measurement parameter: VIH, VIL A VDD X'tal 0.1µF XTN INHN VSS IDD: Open IST: Short XT IDD IST VDD XT IDD: Open Q X'tal XTN INHN VSS CL = 15pF (Including probe capacitance) VIH V VIL Q 0.1µF Note: The AC characteristics are observed using an oscilloscope on pin Q. VIH: Voltage in VSS to VDD transition that changes the output state. VIL: Voltage in VDD to VSS transition that changes the output state. INHN has an oscillation stop function. Measurement cct 2 Measurement parameter: tOD Measurement cct 5 Measurement parameter: IZ VDD C1 XTN INHN VSS R1 VDD or 0.1µF Q CL RL 0.1µF VDD VDD Q INHN VSS Signal Generator A IZ or VSS VSS XTN input signal: 1Vp-p, sine wave C1: 0.001µF CL: 15pF R1: 50Ω RL: 1kΩ Measurement cct 6 Measurement parameter: RUP1, RUP2 Measurement cct 3 Measurement parameter: VOH, VOL 0.1µF 50Ω Q XTN VSS 50Ω VOH V VOL 0.1µF VDD 0.1µF VDD 0.001µF INHN VSS VDD IUP Signal Generator VIN V VS A IUP RUP1 = (VIN = 0V) RUP2 = VDD 0.7V DD (VIN = 0.7V DD) IUP ∆V VOH VS VS VOL ∆V VS adjusted such that ∆V = 50 × IOH. VS adjusted such that ∆V = 50 × IOL. XTN input signal: 1Vp-p, sine wave SEIKO NPC CORPORATION —14 WF5027 series TYPICAL PERFORMANCE (for fundamental oscillator) The following characteristics measured using the crystal below. Note that the characteristics will vary with the crystal used. I Crystal used for measurement Parameter C0 [pF] R1 [Ω] fO = 48MHz 1.6 12 fO = 80MHz 2.1 10 I Crystal parameters L1 C1 R1 C0 Current Consumption 10 10 Current consumption [mA] Current consumption [mA] 8 8 6 6 CL = 15pF 4 4 CL = 15pF 2 CL = 0pF 0 1.5 2 2.5 VDD [V] 3 3.5 4 2 CL = 0pF 0 1.5 2 2.5 VDD [V] 3 3.5 4 5027A1, fOUT = 48MHz, Ta = 25°C 5027AP, fOUT = 80MHz, Ta = 25°C Negative Resistance Frequency [MHz] 10 0 20 30 40 50 60 0 50 60 Frequency [MHz] 70 80 90 100 –200 Negative resistance [Ω] Negative resistance [Ω] –200 C0 = 2pF –400 –400 –600 –600 C0 = 1pF –800 –800 C0 = 2pF –1000 C0 = 1pF C0 = 0pF C0 = 0pF –1000 5027×1 to ×7, VDD = 3.3V, Ta = 25°C 5027×P to ×W, VDD = 3.3V, Ta = 25°C Characteristics are measured with a capacitance C0, representing the crystal equivalent circuit C0 capacitance, connected between the XT and XTN pins. Measurements are performed with Agilent 4396B using the NPC test jig. Characteristics may vary with measurement jig and measurement conditions. SEIKO NPC CORPORATION —15 WF5027 series Frequency Deviation by Supply Voltage Change 1 1 0.5 ∆f/f [ppm] ∆f/f [ppm] 1.6 2.1 2.6 VDD [V] 3.1 3.6 0.5 0 0 –0.5 –0.5 –1 –1 1.6 2.1 2.6 VDD [V] 3.1 3.6 5027×1 to ×7, fOUT = 48MHz, 3.3V standard, Ta = 25°C 5027×P to ×W, fOUT = 80MHz, 3.3V standard, Ta = 25°C Drive Level 50 50 40 Drive level [µW] Drive level [µW] 1.5 2 2.5 VDD [V] 3 3.5 4 40 30 30 20 20 10 10 0 0 1.5 2 2.5 VDD [V] 3 3.5 4 5027×1 to ×7, fOUT = 48MHz, Ta = 25°C 5027×P to ×W, fOUT = 80MHz, Ta = 25°C Phase Noise Measurement equipment: Agilent E5052 Signal Source Analyzer –40 –60 Phase noise [dBc/Hz] Phase noise [dBc/Hz] 10 100 1,000 10,000 100,000 1,000,000 10,000,000 –80 –100 –120 –140 –160 –40 –60 –80 –100 –120 –140 –160 10 100 1,000 10,000 100,000 1,000,000 10,000,000 Offset frequency [Hz] Offset frequency [Hz] 5027A1, VDD = 3.3V, fOSC = fOUT = 48MHz, Ta = 25°C 5027AP, VDD = 3.3V, fOSC = fOUT = 80MHz, Ta = 25°C SEIKO NPC CORPORATION —16 WF5027 series Output Waveform Measurement equipment: Agilent 54855A Oscilloscope 5027A1, VDD = 3.3V, fOUT = 48MHz, CL = 15pF, Ta = 25°C 5027AP, VDD = 3.3V, fOUT = 80MHz, CL = 15pF, Ta = 25°C SEIKO NPC CORPORATION —17 WF5027 series TYPICAL PERFORMANCE (for 3rd overtone oscillator) The following characteristics measured using the crystal below. Note that the characteristics will vary with the crystal used. I Crystal used for measurement Parameter C0 [pF] R1 [Ω] fO = 85MHz 0.9 56 fO = 100MHz 1.2 45 I Crystal parameters L1 C1 R1 C0 Current Consumption 12 10 Current consumption [mA] Current consumption [mA] 8 CL = 15pF 6 4 CL = 0pF 2 0 1.6 12 10 8 CL = 15pF 6 4 CL = 0pF 2 0 1.6 2.2 2.8 VDD [V] 3.4 4 2.2 2.8 VDD [V] 3.4 4 5027×D, fOUT = 85MHz, Ta = 25°C 5027AP, fOUT = 100MHz, Ta = 25°C Negative Resistance Frequency [MHz] 80 120 C0 = 2pF Negative resistance [Ω] 0 0 40 160 200 –200 C0 = 1pF C0 = 0pF –600 1.8V 2.5V 3.3V 1.8V 2.5V 3.3V 1.8V 2.5V 3.3V –400 –800 1.8V 2.5V 3.3V –1000 5027×D, Ta = 25°C, recommended operating frequency range: 85MHz to 110MHz Characteristics are measured with a capacitance C0, representing the crystal equivalent circuit C0 capacitance, connected between the XT and XTN pins. Measurements are performed with Agilent 4396B using the NPC test jig. Characteristics may vary with measurement jig and measurement conditions. SEIKO NPC CORPORATION —18 WF5027 series Frequency Deviation by Supply Voltage Change 1 1 0.5 ∆f/f [ppm] ∆f/f [ppm] 0.5 0 0 –0.5 –0.5 –1 –1 1.6 2.1 2.6 VDD [V] 3.1 3.6 1.6 2.1 2.6 VDD [V] 3.1 3.6 5027×D, fOUT = 85MHz, 3.3V standard, Ta = 25°C 5027×D, fOUT = 100MHz, 3.3V standard, Ta = 25°C Drive Level 200 200 150 Drive level [µW] Drive level [µW] 150 100 100 50 50 0 1.5 2 2.5 VDD [V] 3 3.5 4 0 1.5 2 2.5 VDD [V] 3 3.5 4 5027×D, fOUT = 85MHz, Ta = 25°C 5027×D, fOUT = 100MHz, Ta = 25°C Phase Noise Measurement equipment: Agilent E5052 Signal Source Analyzer –40 –60 Phase noise [dBc/Hz] Phase noise [dBc/Hz] 10 100 1,000 10,000 100,000 1,000,000 10,000,000 –80 –100 –120 –140 –160 –40 –60 –80 –100 –120 –140 –160 10 100 1,000 10,000 100,000 1,000,000 10,000,000 Offset frequency [Hz] Offset frequency [Hz] 5027×D, VDD = 3.3V, fOSC = fOUT = 85MHz, Ta = 25°C 5027×D, VDD = 3.3V, fOSC = fOUT = 100MHz, Ta = 25°C SEIKO NPC CORPORATION —19 WF5027 series Output Waveform Measurement equipment: Agilent 54855A Oscilloscope 5027×D, VDD = 3.3V, fOUT = 85MHz, CL = 15pF, Ta = 25°C 5027×D, VDD = 3.3V, fOUT = 100MHz, CL = 15pF, Ta = 25°C SEIKO NPC CORPORATION —20 WF5027 series Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: sales@npc.co.jp NC0505CE 2007.03 SEIKO NPC CORPORATION —21