2N3904

2N3904 / MMBT3904 / MMPQ3904 / PZT3904 N 2N3904 C C B Discrete Power & Signal Technologies MMBT3904 E TO-92 E SOT-23 Mark: 1A B MMPQ3904 B E B E B E B PZT3904 C C E SOIC-16 C C C C C C C E C B SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current I C = 10 mA, IB = 0 I C = 10 µ A, IE = 0 I E = 10 µA, I C = 0 VCE = 30 V, VEB = 0 VCE = 30 V, VEB = 0 40 60 6.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.65 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure (except MMPQ3904) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 µ A, VCE = 5.0 V, RS =1.0kΩ, f=10 Hz to 15.7 kHz 300 4.0 8.0 5.0 MHz pF pF dB SWITCHING CHARACTERISTICS (except MMPQ3904) td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, I C = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA I B1 = IB2 = 1.0 mA 35 35 200 50 ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 NPN General Purpose Amplifier (continued) Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3904 625 5.0 83.3 200 Max *PZT3904 1,000 8.0 125 Units mW mW/ °C °C/W °C/W Symbol PD RθJA Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die Max **MMBT3904 350 2.8 357 MMPQ3904 1,000 8.0 125 240 Units mW mW/ °C °C/W °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 125 °C VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.15 β = 10 125 °C 300 25 °C 0.1 25 °C 200 100 0 0.1 IC - 40º C 0.05 - 40 °C 1 10 - COLLECTOR CURRENT (mA) 100 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.8 - 40 °C 25 °C 0.6 125 °C 0.6 125 °C 0.4 0.4 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 23 100 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 100 10 1 0.1 POWER DISSIPATION vs AMBIENT TEMPERATURE 1 P D - POWER DISSIPATION (W) 500 VCB = 3 0V 0.75 0.5 SOT-223 0.25 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 150 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Test Circuits 3.0 V 300 ns 10.6 V Duty Cycle = 2% 0 - 0.5 V < 1.0 ns 10 KΩ 275 Ω C1 < 4.0 pF FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 µs t1 10.9 V 275 Ω Duty Cycle = 2% 0 10 KΩ C1 < 4.0 pF - 9.1 V < 1.0 ns 1N916 FIGURE 2: Storage and Fall Time Equivalent Test Circuit