LM613AIN

LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference June 1998 LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference General Description The LM613 consists of dual op-amps, dual comparators, and a programmable voltage reference in a 16-pin package. The op-amps out-performs most single-supply op-amps by providing higher speed and bandwidth along with low supply current. This device was specifically designed to lower cost and board space requirements in transducer, test, measurement, and data acquisition systems. Combining a stable voltage reference with wide output swing op-amps makes the LM613 ideal for single supply transducers, signal conditioning and bridge driving where large common-mode-signals are common. The voltage reference consists of a reliable band-gap design that maintains low dynamic output impedance (1Ω typical), excellent initial tolerance (0.6%), and the ability to be programmed from 1.2V to 6.3V via two external resistors. The voltage reference is very stable even when driving large capacitive loads, as are commonly encountered in CMOS data acquisition systems. As a member of National’s Super-Block™ family, the LM613 is a space-saving monolithic alternative to a multi-chip solution, offering a high level of integration without sacrificing performance. Features OP AMP n Low operating current (Op Amp): 300 µA n Wide supply voltage range: 4V to 36V n Wide common-mode range: V− to (V+ − 1.8V) n Wide differential input voltage: ± 36V n Available in plastic package rated for Military Temp. Range Operation n n n n REFERENCE Adjustable output voltage: 1.2V to 6.3V Tight initial tolerance available: ± 0.6% Wide operating current range: 17 µA to 20 mA Tolerant of load capacitance Applications n n n n Transducer bridge driver Process and mass flow control systems Power supply voltage monitor Buffered voltage references for A/D’s Connection Diagrams E Package Pinout DS009226-1 Top View DS009226-48 Super-Block™ is a trademark of National Semiconductor Corporation. © 1999 National Semiconductor Corporation DS009226 www.national.com Ordering Information Reference Tolerance & VOS Temperature Range Military −55˚C ≤ TA ≤ +125˚C LM613AMN LM613AMJ/883 (Note 14) LM613AME/883 (Note 14) — LM613IN LM613IWM — LM613CN Industrial −40˚C ≤ TA ≤ +85˚C LM613AIN — Commercial 0˚C ≤ TA ≤ +70˚C — — 16-Pin Molded DIP 16-Pin Ceramic DIP 20-Pin LCC 16-Pin Molded DIP — 16-Pin Wide Surface Mount M16B N16E E20A J16A N16E Package NSC Drawing ± 0.6% 80 ppm/˚C Max. VOS ≤ 3.5 mV ± 2.0% 150 ppm/˚C Max. VOS ≤ 5.0 mV Max. LM613MN www.national.com 2 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Voltage on Any Pin Except VR (referred to V−pin) (Note 2) (Note 3) Current through Any Input Pin & VR Pin Differential Input Voltage Military and Industrial Commercial Storage Temperature Range Maximum Junction Temp.(Note 4) 36V (Max) −0.3V (Min) Thermal Resistance, Junction-to-Ambient (Note 5) N Package WM Package Soldering Information (10 Sec.) N Package WM Package ESD Tolerance (Note 6) 100˚C/W 150˚C/W 260˚C 220˚C ± 1 kV ± 20 mA ± 36V ± 32V −65˚C ≤ TJ ≤ +150˚C 150˚C Operating Temperature Range LM613AI, LM613BI: LM613AM, LM613M: LM613C: −40˚C to +85˚C −55˚C to +125˚C 0˚C ≤ TJ ≤ +70˚C Electrical Characteristics These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating Temperature Range. LM613AM Typical Symbol Parameter Conditions (Note 7) LM613AI Limits (Note 8) IS VS Total Supply Current Supply Voltage Range RLOAD = ∞, 4V ≤ V+ ≤ 36V (32V for LM613C) 450 550 2.2 2.9 46 43 OPERATIONAL AMPLIFIERS VOS1 VOS2 VOS Over Supply VOS Over VCM Average VOS Drift IB IOS Input Bias Current Input Offset Current Average Offset Current 4 pA/˚C 4V ≤ V+ ≤ 36V (4V ≤ V+ ≤ 32V for LM613C) VCM = 0V through VCM = (V+ − 1.8V), V+ = 30V, V− = 0V (Note 8) 1.5 2.0 1.0 1.5 15 10 11 0.2 0.3 25 30 4 5 35 40 4 5 3.5 6.0 3.5 6.0 5.0 7.0 5.0 7.0 mV (Max) mV (Max) mV (Max) mV (Max) µV/˚C (Max) nA (Max) nA (Max) nA (Max) nA (Max) 940 1000 2.8 3 36 36 LM613M LM613I LM613C Limits (Note 8) 1000 1070 2.8 3 32 32 µA (Max) µA (Max) V (Min) V (Min) V (Max) V (Max) Units RIN CIN en In CMRR PSRR Input Resistance Input Capacitance Voltage Noise Current Noise Common-Mode Rejection Ratio Power Supply Rejection Ratio Differential Common-Mode f = 100 Hz, Input Referred f = 100 Hz, Input Referred V+ = 30V, 0V ≤ VCM ≤ (V+ − 1.8V) CMRR = 20 log (∆VCM/∆VOS) 4V ≤ V+ ≤ 30V, VCM = V+/2, PSRR = 20 log (∆V+/VOS) 3 1000 6 74 58 95 90 110 100 80 75 80 75 75 70 75 70 MΩ pF dB (Min) dB (Min) dB (Min) dB (Min) www.national.com Electrical Characteristics (Continued) These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating Temperature Range. LM613AM Typical Symbol Parameter Conditions (Note 7) LM613AI Limits (Note 8) OPERATIONAL AMPLIFIERS AV SR GBW VO1 VO2 IOUT ISINK ISHORT Open Loop Voltage Gain Slew Rate Gain Bandwidth Output Voltage Swing High Output Voltage Swing Low Output Source Current Output Sink Current Short Circuit Current RL = 10 kΩ to GND, V+ = 30V, 5V ≤ VOUT ≤ 25V V+ = 30V (Note 9) CL = 50 pF RL = 10 kΩ to GND, V+ = 36V (32V for LM613C) RL = 10 kΩ to V+, V+ = 36V (32V for LM613C) VOUT = 2.5V, V+IN = 0V, V−IN = −0.3V VOUT = 1.6V, V+IN = 0V, V−IN = 0.3V VOUT = 0V,V+IN = 3V, V−IN = 2V VOUT = 5V, V+IN = 2V, V−IN = 3V COMPARATORS VOS Offset Voltage Offset Voltage over VCM Average Offset Voltage Drift IB IOS AV Input Bias Current Input Offset Current Voltage Gain RL = 10 kΩ to 36V (32V for LM613C) 2V ≤ VOUT ≤ 27V V+IN = 1.4V, V−IN = TTL Swing, RL = 5.1 kΩ V+IN = 0V, V−IN = 1V, VOUT = 1.5V VOUT = 0.4V ILEAK Output Leakage Current VOLTAGE REFERENCE VR Voltage Reference (Note 10) 4 LM613M LM613I LM613C Limits (Note 8) Units 500 50 0.70 0.65 0.8 0.5 V+ − 1.4 V+ − 1.6 V− + 0.8 V + 0.9 25 15 17 9 30 40 30 32 1.0 2.0 1.0 1.5 15 − 100 40 0.55 0.45 94 40 0.50 0.45 V/mV (Min) V/µs MHz MHz V+ − 1.7 V+ − 1.9 V− + 0.9 V + 1.0 20 13 14 8 50 60 60 80 3.0 6.0 3.0 6.0 − V+ − 1.8 V+ − 1.9 V− + 0.95 V− + 1.0 16 13 13 8 50 60 70 90 5.0 7.0 5.0 7.0 V (Min) V (Min) V (Max) V (Max) mA (Min) mA (Min) mA (Min) mA (Min) mA (Max) mA (Max) mA (Max) mA (Max) mV (Max) mV (Max) mV (Max) mV (Max) µV/˚C (Max) 4V ≤ V+ ≤ 36V (32V for LM613C), RL = 15 kΩ 0V ≤ VCM ≤ 36V V+ = 36V, (32V for LM613C) 5 8 0.2 0.3 500 100 1.5 2.0 20 13 2.8 2.4 V+IN = 1V, V−IN = 0V, VOUT = 36V (32V for LM613C) 0.1 0.2 1.244 25 30 4 5 35 40 4 5 nA (Max) nA (Max) nA (Max) nA (Max) V/mV V/mV µs µs tr ISINK Large Signal Response Time Output Sink Current 10 8 1.0 0.5 10 10 8 0.8 0.5 10 mA (Min) mA (Min) mA (Min) mA (Min) µA (Max) µA (Max) 1.2365 1.2191 V (Min) www.national.com Electrical Characteristics (Continued) These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating Temperature Range. LM613AM Typical Symbol Parameter Conditions (Note 7) LM613AI Limits (Note 8) VOLTAGE REFERENCE 1.2515 ( ± 0.6%) Average Temp. Drift Hysteresis (Note 11) (Note 12) 10 3.2 80 1.2689 ( ± 2%) 150 ppm/˚C (Max) µV/˚C V (Max) LM613M LM613I LM613C Limits (Note 8) Units VR Change with Current VR(100 µA) − VR(17 µA) 0.05 0.1 1 1.1 5 5.5 0.56 13 7 10 1.2 1.3 1 1.5 35 40 1 1.1 5 5.5 0.56 13 7 10 1.2 1.3 1 1.5 50 55 mV (Max) mV (Max) mV (Max) mV (Max) Ω (Max) Ω (Max) mV (Max) mV (Max) mV (Max) mV (Max) mV (Max) mV (Max) nA (Max) nA (Max) µVRMS VR(10 mA) − VR(100 µA) (Note 13) R Resistance VR Change with High VRO VR Change with VANODE Change ∆VR(10→0.1 mA)/9.9 mA ∆VR(100→17 µA)/83 µA VR(Vro = Vr) 1.5 2.0 0.2 0.6 2.5 2.8 0.1 0.1 0.01 0.01 22 29 30 − VR(Vro = 6.3V) (5.06V between Anode and FEEDBACK) VR(V+ = 5V) − VR(V+ = 36V) (V+ = 32V for LM613C) VR(V+ = 5V) − VR(V+ = 3V) IFB en FEEDBACK Bias Current VR Noise VANODE ≤ VFB ≤ 5.06V 10 Hz to 10 kHz, VRO = VR Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions. Note 2: Input voltage above V+ is allowed. As long as one input pin voltage remains inside the common-mode range, the comparator will deliver the correct output. Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined and unpredictable when any parasitic diode or transistor is conducting. Note 4: Simultaneous short-circuit of multiple comparators while using high supply voltages may force junction temperature above maximum, and thus should not be continuous. Note 5: Junction temperature may be calculated using TJ = TA + PD θJA. The given thermal resistance is worst-case for packages in sockets in still air. For packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θJA is 90˚C/W for the N package, and 135˚C/W for the WM package. Note 6: Human body model, 100 pF discharged through a 1.5 kΩ resistor. Note 7: Typical values in standard typeface are for TJ = 25˚C; values in bold face type apply for the full operating temperature range. These values represent the most likely parametric norm. Note 8: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face). Note 9: Slew rate is measured with the op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage transition is sampled at 10V and @ 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V and 10V. Note 10: VR is the Cathode-to-feedback voltage, nominally 1.244V. Note 11: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is 106 • ∆VR/(VR[25˚C] • ∆TJ), where ∆VR is the lowest value subtracted from the highest, VR[25˚C] is the value at 25˚C, and ∆TJ is the temperature range. This parameter is guaranteed by design and sample testing. Note 12: Hysteresis is the change in VR caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C. Note 13: Low contact resistance is required for accurate measurement. 5 www.national.com Electrical Characteristics (Continued) Note 14: A military RETS 613AMX electrical test specification is available on request. The Military screened parts can also be procured as a Standard Military Drawing. Simplified Schematic Diagrams Op Amp DS009226-2 Comparator DS009226-3 www.national.com 6 Simplified Schematic Diagrams (Continued) Reference/Bias DS009226-4 Typical Performance Characteristics (Reference) 0V, unless otherwise noted Reference Voltage vs Temp. Reference Voltage Drift TJ = 25˚C, FEEDBACK pin shorted to V− = Accelerated Reference Voltage Drift vs Time DS009226-49 DS009226-50 DS009226-51 Reference Voltage vs Current and Temperature Reference Voltage vs Current and Temperature Reference Voltage vs Reference Current DS009226-52 DS009226-53 DS009226-54 7 www.national.com Typical Performance Characteristics (Reference) = 0V, unless otherwise noted (Continued) Reference Voltage vs Reference Current Reference AC Stability Range TJ = 25˚C, FEEDBACK pin shorted to V− FEEDBACK Current vs FEEDBACK-to-Anode Voltage DS009226-55 DS009226-56 DS009226-57 FEEDBACK Current vs FEEDBACK-to-Anode Voltage Reference Noise Voltage vs Frequency Reference Small-Signal Resistance vs Frequency DS009226-58 DS009226-59 DS009226-60 Reference Power-Up Time Reference Voltage with FEEDBACK Voltage Step Reference Voltage with 100 z 12 µA Current Step DS009226-61 DS009226-62 DS009226-63 www.national.com 8 Typical Performance Characteristics (Reference) = 0V, unless otherwise noted (Continued) Reference Step Response for 100 µA z 10 mA Current Step TJ = 25˚C, FEEDBACK pin shorted to V− Reference Voltage Change with Supply Voltage Step Reference Change vs Common-Mode Voltage DS009226-65 DS009226-64 DS009226-66 Typical Performance Characteristics (Op Amps) = V+/2, TJ = 25˚C, unless otherwise noted Input Common-Mode Voltage Range vs Temperature VOS vs Junction Temperature V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT Input Bias Current vs Common-Mode Voltage DS009226-68 DS009226-67 DS009226-69 Large-Signal Step Response Output Voltage Swing vs Temp. and Current DS009226-70 DS009226-71 9 www.national.com Typical Performance Characteristics (Op Amps) VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued) Output Source Current vs Output Voltage and Temp. Output Sink Current vs Output Voltage V+ = 5V, V− = GND = 0V, VCM = V+/2, Output Swing, Large Signal DS009226-72 DS009226-73 DS009226-74 Output Impedance vs Frequency and Gain Small Signal Pulse Response vs Temp. Small-Signal Pulse Response vs Load DS009226-75 DS009226-76 DS009226-77 Op Amp Voltage Noise vs Frequency Op Amp Current Noise vs Frequency Small-Signal Voltage Gain vs Frequency and Temperature DS009226-78 DS009226-79 DS009226-80 www.national.com 10 Typical Performance Characteristics (Op Amps) VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued) Small-Signal Voltage Gain vs Frequency and Load Follower Small-Signal Frequency Response V+ = 5V, V− = GND = 0V, VCM = V+/2, Common-Mode Input Voltage Rejection Ratio DS009226-81 DS009226-82 DS009226-83 Power Supply Current vs Power Supply Voltage Positive Power Supply Voltage Rejection Ratio Negative Power Supply Voltage Rejection Ratio DS009226-84 DS009226-85 DS009226-86 Slew Rate vs Temperature Input Offset Current vs Junction Temperature Input Bias Current vs Junction Temperature DS009226-87 DS009226-88 DS009226-89 11 www.national.com Typical Performance Characteristics (Comparators) Output Sink Current Input Bias Current vs Common-Mode Voltage DS009226-10 DS009226-11 Comparator Response Times — Inverting Input, Positive Transition Comparator Response Times — Inverting Input, Negative Transition DS009226-12 DS009226-13 Comparator Response Times — Non-Inverting Input, Positive Transition Comparator Response Times — Non-Inverting Input, Negative Transition DS009226-14 DS009226-15 www.national.com 12 Typical Performance Characteristics (Comparators) Comparator Response Times — Inverting Input, Positive Transition (Continued) Comparator Response Times — Inverting Input, Negative Transition DS009226-16 DS009226-17 Comparator Response Times — Non-Inverting Input, Positive Transition Comparator Response Times — Non-Inverting Input, Negative Transition DS009226-18 DS009226-19 Typical Performance Distributions Average VOS Drift Military Temperature Range Average VOS Drift Industrial Temperature Range DS009226-20 DS009226-21 13 www.national.com Typical Performance Distributions Average VOS Drift Commercial Temperature Range (Continued) Average IOS Drift Military Temperature Range DS009226-22 DS009226-23 Average IOS Drift Industrial Temperature Range Op Amp Voltage Noise Distribution DS009226-24 DS009226-27 Average IOS Drift Commercial Temperature Range Op Amp Current Noise Distribution DS009226-25 DS009226-28 www.national.com 14 Typical Performance Distributions (Continued) Voltage Reference Broad-Band Noise Distribution DS009226-30 FIGURE 2. Reference Equivalent Circuit DS009226-26 Application Information VOLTAGE REFERENCE Reference Biasing The voltage reference is of a shunt regulator topology that models as a simple zener diode. With current Ir flowing in the “forward” direction there is the familiar diode transfer function. Ir flowing in the reverse direction forces the reference voltage to be developed from cathode to anode. The cathode may swing from a diode drop below V− to the reference voltage or to the avalanche voltage of the parallel protection diode, nominally 7V. A 6.3V reference with V+ = 3V is allowed. DS009226-31 FIGURE 3. 1.2V Reference Capacitors in parallel with the reference are allowed. See the Reference AC Stability Range typical curve for capacitance values — from 20 µA to 3 mA any capacitor value is stable. With the reference’s wide stability range with resistive and capacitive loads, a wide range of RC filter values will perform noise filtering. Adjustable Reference The FEEDBACK pin allows the reference output voltage, Vro, to vary from 1.24V to 6.3V. The reference attempts to hold Vr at 1.24V. If Vr is above 1.24V, the reference will conduct current from Cathode to Anode; FEEDBACK current always remains low. If FEEDBACK is connected to Anode, then Vro = Vr = 1.24V. For higher voltages FEEDBACK is held at a constant voltage above Anode — say 3.76V for Vro = 5V. Connecting a resistor across the constant Vr generates a current I = R1/Vr flowing from Cathode into FEEDBACK node. A Thevenin equivalent 3.76V is generated from FEEDBACK to Anode with R2 = 3.76/I. Keep I greater than one thousand times larger than FEEDBACK bias current for < 0.1% error — I≥32 µA for the military grade over the military temperature range (I≥5.5 µA for a 1% untrimmed error for a commercial part). DS009226-29 FIGURE 1. Voltage Associated with Reference (current source Ir is external) The reference equivalent circuit reveals how Vr is held at the constant 1.2V by feedback, and how the FEEDBACK pin passes little current. To generate the required reverse current, typically a resistor is connected from a supply voltage higher than the reference voltage. Varying that voltage, and so varying Ir, has small effect with the equivalent series resistance of less than an ohm at the higher currents. Alternatively, an active current source, such as the LM134 series, may generate Ir. DS009226-32 FIGURE 4. Thevenin Equivalent of Reference with 5V Output 15 www.national.com Application Information (Continued) DS009226-33 DS009226-36 R1 = Vr/I = 1.24/32µ = 39k R2 = R1 {(Vro/Vr) − 1} = 39k {(5/1.24) − 1)} = 118k FIGURE 5. Resistors R1 and R2 Program Reference Output Voltage to be 5V Understanding that Vr is fixed and that voltage sources, resistors, and capacitors may be tied to the FEEDBACK pin, a range of Vr temperature coefficients may be synthesized. FIGURE 8. Diode in Series with R1 Causes Voltage Across R1 and R2 to be Proportional to Absolute Temperature (PTAT) Connecting a resistor across Cathode-to-FEEDBACK creates a 0 TC current source, but a range of TCs may be synthesized. DS009226-37 DS009226-34 I = Vr/R1 = 1.24/R1 FIGURE 9. Current Source is Programmed by R1 FIGURE 6. Output Voltage has Negative Temperature Coefficient (TC) if R2 has Negative TC DS009226-35 DS009226-38 FIGURE 7. Output Voltage has Positive TC if R1 has Negative TC FIGURE 10. Proportional-to-Absolute-Temperature Current Source DS009226-39 FIGURE 11. Negative-TC Current Source www.national.com 16 Application Information Reference Hysteresis (Continued) LM124), and increased slew rate as shown in the characteristic curves. A resistor pull-up or pull-down will force class-A operation with only the PNP or NPN output transistor conducting, eliminating cross-over distortion. 3. Capacitive Drive: Limited by the output pole caused by the output resistance driving capacitive loads, a pull-down resistor conducting 1 mA or more reduces the output stage NPN re until the output resistance is that of the current limit 25Ω. 200 pF may then be driven without oscillation. The reference voltage depends, slightly, on the thermal history of the die. Competitive micro-power products vary — always check the data sheet for any given device. Do not assume that no specification means no hysteresis. OPERATIONAL AMPLIFIERS AND COMPARATORS Any amp, comparator, or the reference may be biased in any way with no effect on the other sections of the LM613, except when a substrate diode conducts, see Electrical Characteristics (Note 1). For example, one amp input may be outside the common-mode range, another amp may be operating as a comparator, and all other sections may have all terminals floating with no effect on the others. Tying inverting input to output and non-inverting input to V− on unused amps is preferred. Unused comparators should have non-inverting input and output tied to V+, and inverting input tied to V−. Choosing operating points that cause oscillation, such as driving too large a capacitive load, is best avoided. Op Amp Output Stage These op amps, like the LM124 series, have flexible and relatively wide-swing output stages. There are simple rules to optimize output swing, reduce cross-over distortion, and optimize capacitive drive capability: 1. Output Swing: Unloaded, the 42 µA pull-down will bring the output within 300 mV of V− over the military temperature range. If more than 42 µA is required, a resistor from output to V− will help. Swing across any load may be improved slightly if the load can be tied to V+, at the cost of poorer sinking open-loop voltage gain. 2. Cross-Over Distortion: The LM613 has lower cross-over distortion (a 1 VBE deadband versus 3 VBE for the Comparator Output Stage The comparators, like the LM139 series, have open-collector output stages. A pull-up resistor must be added from each output pin to a positive voltage for the output transistor to switch properly. When the output transistor is OFF, the output voltage will be this external positive voltage. For the output voltage to be under the TTL-low voltage threshold when the output transistor is ON, the output current must be less than 8 mA (over temperature). This impacts the minimum value of pull-up resistor. The offset voltage may increase when the output voltage is low and the output current is less than 30 µA. Thus, for best accuracy, the pull-up resistor value should be low enough to allow the output transistor to sink more than 30 µA. Op Amp and Comparator Input Stage The lateral PNP input transistors, unlike those of most op amps, have BVEBO equal to the absolute maximum supply voltage. Also, they have no diode clamps to the positive supply nor across the inputs. These features make the inputs look like high impedances to input sources producing large differential and common-mode voltages. Typical Applications DS009226-40 FIGURE 12. High Current, High Voltage Switch 17 www.national.com Typical Applications (Continued) DS009226-41 FIGURE 13. High Speed Level Shifter. Response time is approximately 1.5 µs, where output is either approximately +V or −V. DS009226-42 FIGURE 14. Low Voltage Regulator. Dropout voltage is approximately 0.2V. DS009226-43 *10k must be low t.c. trimpot FIGURE 15. Ultra Low Noise, 10.00V Reference. Total output noise is typically 14 µVRMS. www.national.com 18 Typical Applications (Continued) DS009226-44 FIGURE 16. Basic Comparator FIGURE 18. Wide-Input Range Comparator with TTL Output DS009226-46 DS009226-45 FIGURE 17. Basic Comparator with External Strobe DS009226-47 FIGURE 19. Comparator with Hysteresis (∆VH = +V(1k/1M)) 19 www.national.com Physical Dimensions inches (millimeters) unless otherwise noted 20-Lead Small Outline Package (E) Order Number LM613AME/883 NS Package Number E20A 16-Lead Ceramic Dual-In-Line Package (J) Order Number LM613AMJ/883 NS Package Number J16A www.national.com 20 Physical Dimensions inches (millimeters) unless otherwise noted (Continued) 16-Lead Small Outline Package (WM) Order Number LM613IWM NS Package Number M16B 16-Lead Molded Dual-In-Line Package (N) Order Number LM613CN, LM613AIN, LM613IN, LM613AMN or LM613MN NS Package Number N16A 21 www.national.com LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference Notes LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com www.national.com National Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Français Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: sea.support@nsc.com National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.