2N2219A

2N2219A Silicon NPN Transistor General Purpose Audio Amplifier, Switch TO−39 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 40 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 75 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 6 − − V VCE = 60V, IE = 0 − − 0.01 A VCE = 60V, IE = 0, TA = +150C − − 10 A ICEX VCE = 60V, VEB(off) = 3V − − 10 nA IEBO VEB = 3V, IC = 0 − − 10 nA VCE = 60V, VEB(off) = 3V − − 20 nA OFF Characteristics Collector Cutoff Current Emitter Cutoff Current Base Cuttoff Current ICBO IBL Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 0.1mA, VCE = 10V 35 − − IC = 1mA, VCE = 10V 50 − − IC = 10mA, VCE = 10V 75 − − IC = 10mA, VCE = 10V, TA = −55C 35 − − IC = 150mA, VCE = 10V 100 − 300 IC = 150mA, VCE = 1.0V 50 − − IC = 500mA, VCE = 10V 40 − − IC = 150mA, IB = 15mA − − 0.3 V IC = 500mA, IB = 50mA − − 1.0 V IC = 150mA, IB = 15mA 0.6 − 1.2 V IC = 500mA, IB = 50mA − − 2.0 V IC = 20mA, VCE = 20V, f = 100MHz, Note 2 300 − − MHz ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage hFE VCE(sat) VBE(sat) Small−Signal Characteristics Current Gain−Bandwidth Product fT Output Capacitance Cobo VCB = 10V, IE = 0, f = 100kHz − − 8 pF Input Capacitance Cibo VEB = 0.5V, IC = 0, f = 100kHz − − 25 pF hie IC = 1mA, VCE = 10V, f = 1kHz 2.0 − 8.0 k IC = 10mA, VCE = 10V, f = 1kHz 0.25 − 1.25 k IC = 1mA, VCE = 10V, f = 1kHz − − 8 x 10−4 IC = 10mA, VCE = 10V, f = 1kHz − − 4 x 10−4 IC = 1mA, VCE = 10V, f = 1kHz 50 − 300 IC = 10mA, VCE = 10V, f = 1kHz 75 − 375 IC = 1mA, VCE = 10V, f = 1kHz 5.0 − 35 mhos IC = 10mA, VCE = 10V, f = 1kHz 25 − 200 mhos IE = 20mA, VCB = 20V, f = 31.8MHz − − 150 ps IC = 100A, VCE = 10V, RS = 1k, f = 1kHz − − 4 dB IC = 20mA, VCE = 20V, f = 300MHz − − 60  VCC = 30V, VBE(off) = 0.5V, IC = 150mA, IB1 = 15mA − − 10 ns − − 25 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA − − 225 ns − − 60 ns IC = 150mA, VCE = 30V − − 2.5 ns Input Impedance Voltage Feedback Ratio Small−Signal Current Gain Output Admittance Collector−Base Time Constant Noise Figure Real Part of Common−Emitter High Frequency Input Impedance hre hfe hoe rbCc NF Re(hie) Switching Characteristics Delay Time tq Rise Time tr Storage Time ts Fall Time tf Active Region Time Constant TA Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)