2N4912

2N4912 Silicon NPN Transistor High Voltage, Medium Power Switch TO−66 Type Package Description: The 2N4912 silicon NPN transistor in a TO−66 type package designed for driver circuits and switching and amplifier applications. Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent safe Operating Area D Gain Specified to IC = 1A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.143W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 1 ICEO VCE = 40V, IB = 0 − − 0.5 mA ICEX VCE = 80V, VBE(off) = 1.5V − − 0.1 mA VCE = 80V, VBE(off) = 1.5V, TC = +100C − − 1.0 mA ICBO VCB = 80V, IE = 0 − − 0.1 mA IEBO VEB = 5V, IC = 0 − − 1.0 mA Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 50mA, VCE = 1V 40 − − IC = 500mA, VCE = 1V 20 − 100 IC = 1A, VCE = 1V 10 − − ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 100mA − − 0.6 V Base−Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 100mA − − 1.3 V Base−Emitter ON Voltage VBE(on) IC = 1A, IB = 100mA − − 1.3 V IC = 250mA, VCE = 10V, f = 1MHz, Note 2 3 − − MHz pF Dynamic Characteristics Current Gain −Bandwidth Product fT Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − − 100 Small−Signal Current Gain hfe IC = 250mA, VCE = 10V, f = 1kHz 25 − − Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest .295 (7.5) .485 (12.3) Dia .062 (1.57) .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter