MPSA05

MPSA05 (NPN) & MPSA06 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO MPSA05 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V MPSA06 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO MPSA05 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V MPSA06 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation @ TA = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation @ TC = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 200C/mW Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/mW Note 1. RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V 80 − − V 4 − − V VCE = 60V, IB = 0 − − 0.1 A VCB = 60V, IE = 0 − − 0.1 A VCB = 80V, IE = 0 − − 0.1 A OFF Characteristics Collector−Emitter Breakdown Voltage MPSA05 V(BR)CEO IB = 1mA, IC = 0 MPSA06 Emitter−Base Breakdown Voltage V(BR)EBO IE = 100A, IC = 0 Collector Cutoff Current ICES Collector Cutoff Current MPSA05 ICBO MPSA06 Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE IC = 10mA, VCE = 1V 100 − − IC = 100mA, VCE = 1V 100 − − Collector−Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 10mA − − 0.25 V Base−Emitter ON Voltage VBE(on) − − 1.2 V 100 − − MHz 100 − − MHz IC = 100mA, VCE = 1V Small−Signal Characteristics Current Gain − Bandwidth Product MPSA05 MPSA06 fT IC = 10mA, VCE = 2V, f = 100MHz, Note 3 Note 3. fT is defined as the frequency at which |hfe| extrapolates to unity. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max