NTE16007

NTE16007 Silicon NPN Transistor General Purpose for Medium Power Applications Description: The NTE16007 is a silicon NPN diffused-junction power transistor in a TO8 type package intended for a wide variety of applications in industrial and military equipment. This device is particularly useful in power-switching circuits such as in DC-to-DC converters, inverters, choppers, solenoid and relay controls; and as class A and class B push-pull audio and servo amplifiers. Absolute Maximum Ratings: Collector-to -Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Power Dissipation, PT TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Derate Linearly Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.010W/°C TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.1W Derate Linearly Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.143W/°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200°C Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA 55 - - V Collector-Base Breakdown Voltage V(BR)CBO IC = 100μA 100 - - V Collector-Emitter Breakdown Voltage V(BR)CEX VEB = 1.5V, IC = 0.25mA 100 - - V Collector-Base Cutoff Current ICBO VCB = 50V - - 15 μA Emitter-Base Cutoff Current IEBO VEB = 12V - - 15 μA hFE VCE = 4V, IC = 750mA 35 - 100 VCE(sat) IC = 750mA, IB = 40mA - - 0.75 ON Characteristics (Note 1) Forward-Current Transfer Ratio Collector-Emitter Saturation Voltage Note 1. Pulse Test: Pulse Width = 300μs, Duty Cycle = 2.0%. V Electrical Characteristics (Con't): Parameter Symbol Test Conditions Min Typ Max Unit 600 - - kHz VCB = 10V, IE = 0, f = 100kHz to 1MHz - - 400 pF VCC = 12V, RC = 15.9Ω, IB0 = IB2 = 35mA, IB1 = 65mA - - 25 μs Dynamic Characteristics Forward Current Transfer Ratio fhfb Output Capacitance Cobo VCB = 28V, IC = 5mA Switching Characteristics Turn-On Time ton + toff .650 (16.51) Dia Max .524 (13.31) Dia Max .330 (8.38) Max .030 (.762) .360 (9.14) Min Base Collector/Case Emitter .292 (7.42) Max