NTE214

NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: D High DC Current Gain D Large Current Capacity and Wide ASO D Low Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 40V, IE = 0 – – 0.1 mA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 3.0 mA DC Current Gain hFE VCE = 2V, IC = 5A 2000 5000 – fT VCE = 5V, IC = 5A – 20 – MHz Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 10mA – 0.9 1.5 V Base–Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 10mA – – 2.0 V Collector–Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0 70 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = ∞ 60 – – V – 0.6 – µs – 3.0 – µs – 1.8 – µs Current Gain–Bandwidth Product Turn–On Time ton Storage Time tstg Fall Time tf VCC = 20V, VBE = –5V, 500IB1 = –500IB2 = IC = 5A, PW = 50µs, Duty Cycle ≤ 1% Schematic Diagram C B E .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47)