NTE2339

NTE2339 Silicon NPN Transistor High Voltage, High Speed Switch TO−220 Full Pack Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Note 1. Pulse Width  300s, Duty Cycle  10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 800V, IE = 0 − − 10 A Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 10 A hFE (1) VCE = 5V, IC = 200mA 20 − 40 hFE (2) VCE = 5V, IC = 1A 8 − − fT VCE = 10V, IC 200mA − 15 − MHz Cob VCB = 10V, f = 1MHz − 60 − pF DC Current Gain Gain Bandwidth Product Output Capacitance Collector−Emitter Saturation Voltage VCE(sat) IC = 1.5A, IB = 300mA − − 2.0 V Base−Emitter Saturation Voltage VBE(sat) − − 1.5 V IC = 1.5A, IB = 300mA Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Collector−Base Breakdown Voltage Test Conditions V(BR)CBO IC = 1mA, IE = 0 Collector−Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE =  Emitter−Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 Collector−Emitter Sustaining Voltage VCEX(sus) IC = 1.5A, IB1 = IB2 = 300mA, L = 2mH, Clamped Turn−On Time ton Storage Time tstg Fall Time VCC = 400V, IB1 = −2.5A, IB2 =IC = 2A, RL = 200 tf .402 (10.2) Max Min Typ Max Unit 1100 − − V 800 − − V 7 − − V 800 − − V − − 0.5 s − − 3.0 s − − 0.3 s .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated