NTE2696

NTE2696 Silicon NPN Transistor Low Noise Audio Amplifier TO−92 Type Package (Compl to NTE234) Description: The NTE2696 is a silicon NPN transistor in a TO−92 type package designed for use in low frequency and low noise applications. The function of this device is to lower the noise figure in the region of low signal source impedance, and to lower the pulse noise. The NTE2696 can also be used in the first stages of equalizer amplifiers. Features: D Low Noise: NF = 4db (Typ), RG = 100, VCE = 6V, IC = 100A, f = 1kHz NF = 0.5db (Typ), RG = 1k, VCE = 6V, IC = 100A, f = 1kHz D Low Pulse Noise: Low l/f Noise D High DC Current Gain: hFE = 350 to 700 D High Breakdown Voltage: VCEO = 120V Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +125C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 120V, IE = 0 − − 0.1 A Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 0.1 A 120 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IC = 2mA Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol DC Current Gain Test Conditions Min Typ Max Unit hFE VCE = 6V, IC = 2mA 350 − 700 VCE(sat) IC = 10mA, IB = 1mA − − 0.3 V Base−Emitter Voltage VBE VCE = 6V, IC = 2mA − 0.65 − V Transition Frequency fT VCE = 6V, IC = 1mA − 100 − MHz − 3.0 − pF f = 10Hz, RG = 10k − − 6 dB f = 1kHz, RG = 10k − − 2 dB f = 1kHz, RG = 100 − 4 − dB Collector−Emitter Saturation Voltage Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz Noise Figure NF VCE = 6V, IC = 0.1mA .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .165 (4.2) Max E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max