NTE329

NTE329 Silicon NPN Transistor RF Power Amp, CB Description: The NTE329 is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 50mA, IB = 0 30 – – V V(BR)CES IC = 200mA, VBE = 0 60 – – V V(BR)EBO IE = 1mA, IC = 0 3 – – V OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ICBO VCB = 15V, IE = 0 – – 0.01 mA hFE VCE = 2V, IC = 400mA 10 – – – Cob VCB = 12.5V, IE = 0, f = 1MHz – 35 70 pF ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ GPE POUT = 3.5W, VCC = 12.5V, f = 27MHz 10 – Collector Efficiency η POUT = 3.5W, VCC = 12.5V, f = 27MHz, Note 3 Percent Up–Modulation – f = 27MHz, Note 2 – Max Unit Functional Test Common–Emitter Amplifier Power Gain – dB – % 85 – % 62.5 70.0 Parallel Equivalent Input Resistance Rin POUT = 3.5W, VCC = 12.5V, f = 27MHz – 21 – Ω Parallel Equivalent Input Capacitance Cin POUT = 3.5W, VCC = 12.5V, f = 27MHz – 900 – pF Parallel Equivalent Output Capaciatnce Cout POUT = 3.5W, VCC = 12.5V, f = 27MHz – 200 – pF Note 2. η = RF POUT
100 (VCC) (IC) Note 3. Percentage Up–Modulation is measured by setting the Carrier Power (PC) to 3.5 Watts with VCC = 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after doubling the original power input to simulate driver modulation (at a 25% duty cycle for thermal considerations) and raising the VCC to 25Vdc (to simulate the modulating voltage). Percentage Up–Modulation is then determined by the relation: Percentage Up–Modulation = (PEP) 1/2–1
100 PC .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)