NTE37MCP

NTE36 (NPN) & NTE37 (PNP) Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case designed for AF power amplifier and high current switching applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICEO VCB = 80V, IE = 0 – – 0.1 mA Emitter Cutoff Current IEBO VBE = 4V, IC = 0 – – 0.1 mA DC Current Gain hFE1 VCE = 5V, IC = 1A 60 – 200 hFE2 VCE = 5V, IC = 6A 20 – – fT VCE = 5V, IC = 1A – 15 – – – 210 300 – – – – 1.5 – – 0.6 1.1 2.5 – Gain Bandwidth Product Output Capacitance NTE36 NTE37 Cob Base–Emitter Voltage VBE Collector–Emitter Saturation Voltage NTE36 NTE37 VCE(sat) VCB = 10V, f = 1MHz VCE = 5V, IC = 1A MHz pF IC = 5A, IB = 500mA V V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0 160 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞ 140 – – V 140 – – V 6 – – V – – 0.26 0.25 – – – – 0.68 0.53 – – – – 6.88 1.61 – – IC = 50mA, RBE = ∞ Emitter–Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 Turn–On Time NTE36 NTE37 ton Fall Time NTE36 NTE37 µs 10IB1 = –10IB2 = IC = 1A, PW = 20µs µs tf Storage Time NTE36 NTE37 µs ton Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. .190 (4.82) .787 (20.0) .615 (15.62) .670 (17.0) Max OR .197 (5.0) .866 (22.0) .217 (5.5) (Note) .591 (15.02) .126 (3.22) Dia B .590 (15.0) .130 (3.3) Dia C E .177 (4.5) .747 (19.0) Min .787 (20.0) B C E .215 (5.47) NOTE: Either case style may be shipped depending on stock. .215 (5.47) .025 (0.65)