NTE56040

NTE56040 & NTE56041 TRIAC, 4A Sensitive Gate Description: The NTE56040 and NTE56041 are glass passivated, sensitive gate TRIACs in a TO220 type package designed for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Absolute Maximum Ratings: Repetitive Peak Off–Sate Voltage (Note 1), VDRM NTE56040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56041 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On–State Current (Full Sine Wave, TMB ≤ 107°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Non–Repetitive Peak On–State Current, ITSM (Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27A I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A2sec Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt (ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/µs) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Thermal Resistance, Junction–to–Mounting Base, RthJMB Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0K/W Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage, but the TRIAC may switch to the On–State. The rate–of–rise of current should not exceed 3A/µs. Electrical Characteristics: (TJ = +25°C unless otherwise specfied) Parameter Symbol Test Conditions Min Typ Max Unit – 2.5 10 mA MT2 (+), G (–) – 4.0 10 mA MT2 (–), G (–) – 5.0 10 mA MT2 (–), G (+) – 11 25 mA – 3.0 15 mA MT2 (+), G (–) – 10 20 mA MT2 (–), G (–) – 2.5 15 mA MT2 (–), G (+) – 4.0 20 mA Static Characteristics Gate Trigger Current MT2 (+), G (+) IGT Latching Current MT2 (+), G (+) IL VD = 12V, IT = 0.1A VD = 12V, IT = 0.1A Holding Current IH VD = 12V, IT = 0.1A – 2.2 15 mA On–State Voltage VT IT = 5A – 1.4 1.7 V VD = 12V, IT = 0.1A – 0.7 1.5 V 0.25 0.4 – V VD = VDRMmax, TJ = +125°C – 0.1 0.5 mA dVD/dt VDM = 67% VDRMmax, TJ = +125°C, Exponential Waveform, Gate Open – 50 – V/µs tgt ITM = 6A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/µs – 2 – µs Gate Trigger Voltage VGT VD = 400V, IT = 0.1A, TJ = +125°C Off–State Leakage Current ID Dynamic Characteristics Critical Rate–of–Rise of Off–State Voltage Gate Controlled Turn–On Time .420 (10.67) Max .110 (2.79) MT2 .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max .500 (12.7) Min MT1 Gate .100 (2.54) MT2