NTE5845

NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode 20 Amp, DO4 Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics: Average Forward Current (TC = +140°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Maximum Forward Surge Current (60Hz), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A Fusing Current (60Hz), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 493A2s Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7640A2ps Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1200V Voltage Ratings: (TJ = +175°C) Cathode to Case Anode to Case VRRM−Max Repetitive Peak Reverse Volt. (V) 5912 5913 50 75 50 − 12 5914 5915 100 150 100 − 12 5916 5917 200 275 200 − 12 5918 5919 300 385 300 − 12 5920 5921 400 500 400 500 12 5922 5923 500 613 50 613 12 5924 5925 600 725 600 725 12 5928 5929 800 950 800 950 12 5932 5933 1000 1200 1000 1200 12 5844 5845 1200 1400 1200 1350 12 NTE Type Number VRSM−Max Non−Repetitive Peak Reverse Voltage (V) VR−Max. Direct Reverse Voltage (V) VR(SR) Minimum Avalanche Voltage (V) IRM−Max Reverse Current Rated VRRM (mA) Electrical Specifications: Parameter Symbol Maximum Average Forward Current IF (AV) Maximum Peak One−Cycle Non−Repetitive Surge Current IFSM Test Conditions Rating Unit 180° sinusoidal condition, TC = +150°C Max 20 A t = 10ms Sinusoidal Half Wave, No voltage reapplied 400 A 425 A 100% rated voltage reapplied, TJ = +175°C 437 A 462 A 540 A2s t = 8.3ms No voltage reapplied, Initial TJ = +175°C 493 A2s t = 10ms 100% rated voltage reapplied 765 A2s t = 8.3ms 700 A2s t = 8.3ms t = 10ms t = 8.3ms Maximum I2t I2t for Fusing t = 10ms Maximum I2t for Individual Device Fusing Maximum I2pt I2pt t = 0.1 to 10ms, No voltage reapplied, Note 1 7640 A2pt Maximum Peak Forward Voltage VFM IFM = 63A, TJ = +25°C 1.23 V VM (TO) TJ = +175°C 0.78 V rt TJ = +175°C 7.55 mΩ Maximum Value of Threshold Voltage Maximum Value of Forward Slope Resistance Note 1. I2t for time tx = I2Ǩt S Ǩtx Thermal−Mechanical Specifications: Parameter Symbol Maximum Operation Junction Temperature Maximum Storage Temperature Test Conditions Rating Unit TJ −65 to + 175 °C Tstg −65 to + 200 °C Maximum Internal Thermal Resistance Junction−to−Case RthJC DC operation 1.6 K/W Thermal Resistance, Case−to−Sink RthCS Mounting surface flat, smooth and greased 0.25 K/W Mounting Torque T Approximate Weight wt .437 (11.1) Max .424 (10.8) Dia Max Non−lubricated threads 1.2 − 1.5 m•N (10.5 − 13.5) (in•lb) 11 (0.25) .250 (6.35) Max .175 (4.45) Max .060 (1.52) Dia Min 10−32 NF−2A .405 (10.3) Max 1.250 (31.75) Max .453 (11.5) Max g (oz)