NTE6087

NTE6087 Dual Schottky Barrier Silicon Rectifier 45V, 30 Amp, TO220 Type Package Features: D Schottky Barrier Chip D Guard Ring for Transient Protection D Low Forward Voltage Drop D Low Power loss, High Efficiency D High Surge Current Capability D Guaranteed Reverse Avalanche Maximum Ratings an Electrical Characteristics: (TA = +25C unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.) Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V Average Rectified Output Current (TC = +100C), IO Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Non−Repetitive Peak Surge Current, IFSM (8.3ms Single Half Sine−Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . . . . 200A Forward Voltage (Per Diode, IF = 15A), VFM TJ = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.62V TJ = +125C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.57V Peak Reverse Current (VR = 45V), IRM TJ = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0mA TJ = +125C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Typical Junction capacitance (Note 1), CJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750pF Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Maximum Thermal Resistance, Junction−to−Ambient (Per Diode Leg), RthJA . . . . . . . . . . . 50C/W Maximum Thermal Resistance, Junction−to−Case (Per Diode Leg), RthJC . . . . . . . . . . . . . 1.5C/W Note 1. Measured at 1.0MHz and applied voltage of 4.0VDC. Rev. 11−14 Pin1 Pin2, Case Pin3 .147 (3.75) Dia Max .185 (4.7) .054 (1.38) .392 (9.95) .110 (2.79) .245 (6.22) .269 (6.83) Max K .6.08 (15.42) Max .040 (1.02) A K A .500 (12.7) Min .100 (2.54) .018 (0.48)