NTE643

NTE643 Silicon Dual Schottky Rectifier 200V, 10 Amp, TO220 Type Package Features: D Schottky Barrier Chip D Guard Ring for Transient Protection D Low Forward Voltage Drop D Low Reverse Leakage Current D High Surge Current capability Maximum Ratings and Electrical Characteristics: (TA = +255C unless otherwise specified. Single Phase, Half Wave, 60Hz, Resistive or Inductive load. For capacitive load, derate current by 20%) Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Average Rectified Output Current (TC = +955C), IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Non−Repetitive Peak Forward Surge Current, IFSM (8.3ms Single Half Sine−Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . 150A Forward Voltage (IF = 5A), VFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.92V Peak Reverse Current (At Rated DC Blocking Voltage), IRM TA = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5mA TA = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Typical Junction Capacitance (Note 1), Cj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700pF Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C Note 1. Measured at 1MHz and applied reverse voltage of 4VDC. .147 (3.75) Dia Max .185 (4.7) .054 (1.38) .392 (9.95) .110 (2.79) .245 (6.22) K .6.08 (15.42) Max .040 (1.02) A K A .500 (12.7) Min .100 (2.54) .018 (0.48)