Numonyx™ Advanced+ Boot Block Flash Memory (C3)
28F800C3, 28F160C3, 28F320C3 (x16)
Datasheet
Product Features
Flexible SmartVoltage Technology — 2.7 V– 3.6 V read/program/erase — 12 V for fast production programming 1.65 V to 2.5 V or 2.7 V to 3.6 V I/O Option — Reduces overall system power High Performance — 2.7 V– 3.6 V: 70 ns max access time Optimized Architecture for Code Plus Data Storage — Eight 4 Kword blocks, top or bottom parameter boot — Up to 127 x 32 Kword blocks — Fast program suspend capability — Fast erase suspend capability Flexible Block Locking — Lock/unlock any block — Full protection on power-up — Write Protect (WP#) pin for hardware block protection Low Power Consumption — 9 mA typical read — 7 uA typical standby with Automatic Power Savings feature Extended Temperature Operation — -40 °C to +85 °C 128-bit Protection Register — 64 bit unique device identifier — 64 bit user programmable OTP cells Extended Cycling Capability — Minimum 100,000 block erase cycles Software — Supported by Numonyx Advanced Flash File Managers -- Numonyx™ VFM, Numonyx™ FDI, etc. — Code and data storage in the same memory device — Robust Power Loss Recovery for Data Loss Prevention — Common Flash Interface Standard Surface Mount Packaging — 48-Ball μBGA*/VFBGA — 64-Ball Easy BGA packages — 48-TSOP package Intel ETOX* VIII (0.13 μm) Flash Technology — 8, 16, 32 Mbit Intel ETOX* VII (0.18 μm) Flash Technology — 16, 32 Mbit Intel ETOX* VI (0.25 μm) Flash Technology — 8, 16 and 32 Mbit
290645-24 March 2008
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications.
Legal Lines and Disclaimers
Numonyx B.V. may make changes to specifications and product descriptions at any time, without notice. Numonyx B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting the Numonyx website at http://www.numonyx.com. Numonyx, the Numonyx logo, and StrataFlash are trademarks or registered trademarks of Numonyx B.V. or its subsidiaries in other countries. *Other names and brands may be claimed as the property of others. Copyright © 2008, Numonyx B.V., All Rights Reserved.
Datasheet 2
March 2008 290645-24
C3 Discrete
Contents
1.0 Introduction .............................................................................................................. 7 1.1 Nomenclature ..................................................................................................... 7 1.2 Conventions ....................................................................................................... 8 Functional Overview .................................................................................................. 9 2.1 Product Overview ................................................................................................ 9 2.2 Block Diagram .................................................................................................. 10 2.3 Memory Map..................................................................................................... 10 Package Information ............................................................................................... 13 3.1 mBGA* and VF BGA Package .............................................................................. 13 3.2 TSOP Package................................................................................................... 14 3.3 Easy BGA Package............................................................................................. 15 Ballout and Signal Descriptions ............................................................................... 16 4.1 48-Lead TSOP Package ...................................................................................... 16 4.2 64-Ball Easy BGA Package .................................................................................. 19 4.3 Signal Descriptions ............................................................................................ 19 Maximum Ratings and Operating Conditions ............................................................ 21 5.1 Absolute Maximum Ratings................................................................................. 21 5.2 Operating Conditions ......................................................................................... 21 Electrical Specifications ........................................................................................... 23 6.1 Current Characteristics....................................................................................... 23 6.2 DC Voltage Characteristics.................................................................................. 24 AC Characteristics ................................................................................................... 26 7.1 AC Read Characteristics ..................................................................................... 26 7.2 AC Write Characteristics ..................................................................................... 30 7.3 Erase and Program Timings ................................................................................ 34 7.4 AC I/O Test Conditions....................................................................................... 34 7.5 Device Capacitance ........................................................................................... 35 Power and Reset Specifications ............................................................................... 36 8.1 Active Power (Program/Erase/Read) .................................................................... 36 8.2 Automatic Power Savings (APS) .......................................................................... 36 8.3 Standby Power.................................................................................................. 36 8.4 Deep Power-Down Mode..................................................................................... 36 8.5 Power and Reset Considerations .......................................................................... 37 8.5.1 Power-Up/Down Characteristics................................................................ 37 8.5.2 RP# Connected to System Reset .............................................................. 37 8.5.3 VCC, VPP and RP# Transitions.................................................................. 37 8.5.4 Reset Specifications................................................................................ 37 8.6 Power Supply Decoupling ................................................................................... 38 Device Operations ................................................................................................... 39 9.1 Bus Operations ................................................................................................. 39 9.1.1 Read .................................................................................................... 39 9.1.2 Write .................................................................................................... 39 9.1.3 Output Disable ....................................................................................... 39 9.1.4 Standby ................................................................................................ 39 9.1.5 Reset.................................................................................................... 40
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 Modes of Operation ................................................................................................. 41
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Datasheet 3
C3 Discrete
10.1
10.2 10.3
Read Mode........................................................................................................41 10.1.1 Read Array ............................................................................................41 10.1.2 Read Identifier .......................................................................................41 10.1.3 CFI Query ..............................................................................................42 10.1.4 Read Status Register...............................................................................42 10.1.4.1 Clear Status Register .................................................................43 Program Mode...................................................................................................43 10.2.1 12-Volt Production Programming ..............................................................43 10.2.2 Suspending and Resuming Program ..........................................................44 Erase Mode .......................................................................................................44 10.3.1 Suspending and Resuming Erase ..............................................................44
11.0 Security Modes ........................................................................................................48 11.1 Flexible Block Locking.........................................................................................48 11.1.1 Locking Operation...................................................................................48 11.1.1.1 Locked State ............................................................................49 11.1.1.2 Unlocked State .........................................................................49 11.1.1.3 Lock-Down State.......................................................................49 11.2 Reading Block-Lock Status ..................................................................................49 11.3 Locking Operations during Erase Suspend .............................................................49 11.4 Status Register Error Checking ............................................................................50 11.5 128-Bit Protection Register .................................................................................50 11.5.1 Reading the Protection Register ................................................................50 11.5.2 Programming the Protection Register.........................................................51 11.5.3 Locking the Protection Register.................................................................51 11.6 VPP Program and Erase Voltages ..........................................................................51 11.6.1 Program Protection .................................................................................51
Datasheet 4
March 2008 290645-24
C3 Discrete
Revision History
Date of Revision 05/12/98
Version -001 Original version
Description
07/21/98
-002
48-Lead TSOP package diagram change μBGA package diagrams change 32-Mbit ordering information change (Section 6) CFI Query Structure Output Table Change (Table C2) CFI Primary-Vendor Specific Extended Query Table Change for Optional Features and Command Support change (Table C8) Protection Register Address Change IPPD test conditions clarification (Section 4.3) μBGA package top side mark information clarification (Section 6) Byte-Wide Protection Register Address change VIH Specification change (Section 4.3) VIL Maximum Specification change (Section 4.3) ICCS test conditions clarification (Section 4.3) Added Command Sequence Error Note (Table 7) Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash Memory Family. Added tBHWH/tBHEH and tQVBL (Section 4.6) Programming the Protection Register clarification (Section 3.4.2) Removed all references to x8 configurations Removed reference to 40-Lead TSOP from front page Added Easy BGA package (Section 1.2) Removed 1.8 V I/O references Locking Operations Flowchart changed (Appendix B) Added tWHGL (Section 4.6) CFI Primary Vendor-Specific Extended Query changed (Appendix C) Max ICCD changed to 25 µA Table 10, added note indicating VCCMax = 3.3 V for 32-Mbit device Added specifications for 0.18 micron product offerings throughout document Added 64Mbit density Changed references of 32Mbit 80ns devices to 70ns devices to reflect the faster product offering. Changed VccMax=3.3V reference to indicate that the affected product is the 0.25μm 32Mbit device. Minor text edits throughout document. Added 1.8v I/O operation documentation where applicable Added TSOP PCN ‘Pin-1’ indicator information Changed references in 8 x 8 BGA pinout diagrams from ‘GND’ to ‘Vssq’ Added ‘Vssq’ to Pin Descriptions Information Removed 0.4 µm references in DC characteristics table Corrected 64Mb package Ordering Information from 48-uBGA to 48-VFBGA Corrected ‘bottom’ parameter block sizes to on 8Mb device to 8 x 4KWords Minor text edits throughout document Added specifications for 0.13 micron product offerings throughout document Corrected Iccw / Ippw / Icces /Ippes values. Added mechanicals for 16Mb and 64Mb Minor text edits throughout document. Updated 64Mb product offerings. Updated 16Mb product offerings. Revised and corrected DC Characteristics Table. Added mechanicals for Easy BGA. Minor text edits throughout document. Complete technical update.
10/03/98
-003
12/04/98 12/31/98 02/24/99
-004 -005 -006
06/10/99
-007
03/20/00 04/24/00
-008 -009
10/12/00
-010
7/20/01
-011
10/02/01 2/05/02
-012 -013
4/05/02
-014
3/06/03
-016
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Datasheet 5
C3 Discrete
Date of Revision 10/01/03 5/20/04 9/1/04 9/14/04 9/27/04 1/26/05
Version -017 -018 -019 -020 -021 -022
Description Corrected information in the Device Geometry Details table, address 0x34. Updated the layout of the datasheet. Fixed typo for Standby power on cover page. Added lead-free line items to Table 38, “Product Information Ordering Matrix” on page 70. Added specification for 8Mb 0.13 micron device. Added 0.13 micron to Table 38, “Product Information Ordering Matrix” on page 70. Converted datasheet to new template. Deleted Description in Table 4. Deleted Note in Figure 5. Removed all 64M ordering information, removed VF BGA 8M ordering information. Removed 64M reference in title page only. Added software verbiage in title page. Corrected Lead Width (b) measurement in Fig 2., uBGA and VF BGA Package Drawing and Dimensions, page 12. Applied Numnyx branding.
5/16/05 March 2008
-023 24
Datasheet 6
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C3 Discrete
1.0
Introduction
This datasheet contains the specifications for the Numonyx™ Advanced+ Boot Block Flash Memory (C3) device family, hereafter called the C3 flash memory device. These flash memories add features such as instant block locking and protection registers that can be used to enhance the security of systems. The Numonyx™ Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel’s latest 0.13 μm and 0.18 μm technologies, represents a feature-rich solution for low-power applications. The C3 device incorporates low-voltage capability (3 V read, program, and erase) with high-speed, low-power operation. Flexible block locking allows any block to be independently locked or unlocked. Add to this the Numonyx™ Flash Data Integrator (Numonyx™ FDI) software and you have a cost-effective, flexible, monolithic code plus data storage solution. Numonyx™ Advanced+ Boot Block Flash Memory (C3) products are available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA packages. Additional information on this product family can be obtained from the Numonyx™ Flash website: http://www.Numonyx.com
1.1
Nomenclature
0x 0b Byte Word Hexadecimal prefix Binary prefix 8 bits 16 bits
KW or Kword 1024 words Mword Kb KB Mb MB APS CSP CUI OTP PR PRD PLR RFU SR SRD WSM 1,048,576 words 1024 bits 1024 bytes 1,048,576 bits 1,048,576 bytes Automatic Power Savings Chip Scale Package Command User Interface One Time Programmable Protection Register Protection Register Data Protection Lock Register Reserved for Future Use Status Register Status Register Data Write State Machine
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Datasheet 7
C3 Discrete
1.2
Conventions
The terms pin and signal are often used interchangeably to refer to the external signal connections on the package; for chip scale package (CSP) the term ball is used. Group Membership Brackets: Square brackets will be used to designate group membership or to define a group of signals with similar function (i.e. A[21:1], SR[4:1]) Set: When referring to registers, the term set means the bit is a logical 1. Clear: When referring to registers, the term clear means the bit is a logical 0. Block: A group of bits (or words) that erase simultaneously with one block erase instruction. Main Block: A block that contains 32 Kwords. Parameter Block: A block that contains 4 Kwords.
Datasheet 8
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C3 Discrete
2.0
Functional Overview
This section provides an overview of the Numonyx™ Advanced+ Boot Block Flash Memory (C3) device features and architecture.
2.1
Product Overview
The C3 flash memory device provides high-performance asynchronous reads in package-compatible densities with a 16 bit data bus. Individually-erasable memory blocks are optimally sized for code and data storage. Eight 4 Kword parameter blocks are located in the boot block at either the top or bottom of the device’s memory map. The rest of the memory array is grouped into 32 Kword main blocks. The device supports read-array mode operations at various I/O voltages (1.8 V and 3 V) and erase and program operations at 3 V or 12 V VPP. With the 3 V I/O option, VCC and VPP can be tied together for a simple, ultra-low-power design. In addition to I/O voltage flexibility, the dedicated VPP input provides complete data protection when VPP ≤ VPPLK. The C3 Discrete device features a 128-bit protection register enabling security techniques and data protection schemes through a combination of factory-programmed and user-programmable OTP data registers. Zero-latency locking/unlocking on any memory block provides instant and complete protection for critical system code and data. Additional block lock-down capability provides hardware protection where software commands alone cannot change the block’s protection status. A command User Interface (CUI) serves as the interface between the system processor and internal operation of the device. A valid command sequence issued to the CUI initiates device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for block erase, program, and lock-bit configuration operations. The device offers three low-power saving features: Automatic Power Savings (APS), standby mode, and deep power-down mode. The device automatically enters APS mode following read cycle completion. Standby mode begins when the system deselects the flash memory by deasserting Chip Enable, CE#. The deep power-down mode begins when Reset Deep Power-Down, RP# is asserted, which deselects the memory and places the outputs in a high-impedance state, producing ultra-low power savings. Combined, these three power-savings features significantly enhanced power consumption flexibility.
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Datasheet 9
C3 Discrete
2.2
Figure 1:
Block Diagram
C3 Flash Memory Device Block Diagram
DQ 0-DQ 15
VCCQ Output Buffer Input Buffer
Outp ut M ulti ple xer
Status Register
Da ta Re gi ster
Identifier Register
I/O Logic CE# WE# OE# RP# WP#
Power Reduction Control
Data Comparator
Command User Interface
A[MAX:MIN]
Y-Decoder Input Buffer 4 -KWor d Para mete r B loc k
Y-Gating/Sensing 4 -KWor d Para mete r B loc k 32- KWord M ain Blo ck
Write State Machine 32- KWord M ain Blo ck
Program/Erase Voltage Switch
VPP
Address Latch
X-Decoder
VCC GND
Address Counter
2.3
Memory Map
The C3 Discrete device is asymmetrically blocked, which enables system code and data integration within a single flash device. The bulk of the array is divided into 32 Kword main blocks that can store code or data, and 4 Kword boot blocks to facilitate storage of boot code or for frequently changing small parameters. See Table 1, “Top Boot Memory Map” on page 11 and Table 2, “Bottom Boot Memory Map” on page 12 for details.
Datasheet 10
March 2008 290645-24
C3 Discrete
Table 1:
Size (KW ) 4 4 4 4 4 4 4 4 32 32 32 32 ... 32 32 32 Blk
Top Boot Memory Map
8-Mbit Memory Addressin g (Hex) 7F0007FFFF 7E0007EFFF 7D0007DFFF 7C0007CFFF 7B0007BFFF 7A0007AFFF 7900079FFF 7800078FFF 7000077FFF 680006FFFF 6000067FFF 580005FFFF ... 1000017FFF 8000-0FFFF 0000-07FFF Size (KW ) 4 4 4 4 4 4 4 4 32 32 32 32 ... 32 32 32 Blk 16-Mbit Memory Addressing (Hex) FF000-FFFFF FE000-FEFFF FD000-FDFFF FC000-FCFFF FB000-FBFFF FA000-FAFFF F9000-F9FFF F8000-F8FFF F0000-F7FFF E8000-EFFFF E0000-E7FFF D8000-DFFFF ... 10000-17FFF 08000-0FFFF 00000-07FFF Size (KW ) 4 4 4 4 4 4 4 4 32 32 32 32 ... 32 32 32 Blk 32-Mbit Memory Addressin g (Hex) 1FF0001FFFFF 1FE0001FEFFF 1FD0001FDFFF 1FC0001FCFFF 1FB0001FBFFF 1FA0001FAFFF 1F90001F9FFF 1F80001F8FFF 1F00001F7FFF 1E80001EFFFF 1E00001E7FFF 1D80001DFFFF ... 1000017FFF 080000FFFF 0000007FFF Size (KW ) 4 4 4 4 4 4 4 4 32 32 32 32 ... 32 32 32 Blk 64-Mbit Memory Addressing (Hex) 3FF000-3FFFFF 3FE000-3FEFFF 3FD000-3FDFFF 3FC000-3FCFFF 3FB000-3FBFFF 3FA000-3FAFFF 3F9000-3F9FFF 3F8000-3F8FFF 3F0000-3F7FFF 3E8000-3EFFFF 3E0000-3E7FFF 3D8000-3DFFFF ... 10000-17FFF 08000-0FFFF 00000-07FFF
22 21 20 19 18 17 16 15 14 13 12 11 ... 2 1 0
38 37 36 35 34 33 32 31 30 29 28 27 ... 2 1 0
70 69 68 67 66 65 64 63 62 61 60 59 ... 2 1 0
134 133 132 131 130 129 128 127 126 125 124 123 ... 2 1 0
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Datasheet 11
C3 Discrete
Table 2:
Size (KW ) 32 32 32 32 ... 32 32 32 4 4 4 4 4 4 4 4 Blk
Bottom Boot Memory Map
8-Mbit Memory Addressin g (Hex) 780007FFFF 7000077FFF 680006FFFF 6000067FFF ... 180001FFFF 1000017FFF 080000FFFF 0700007FFF 0600006FFF 0500005FFF 0400004FFF 0300003FFF 0200002FFF 0100001FFF 0000000FFF Size (KW ) 32 32 32 32 ... 32 32 32 4 4 4 4 4 4 4 4 Blk 16-Mbit Memory Addressing (Hex) F8000-FFFFF F0000-F7FFF E8000-EFFFF E0000-E7FFF ... 18000-1FFFF 10000-17FFF 08000-0FFFF 07000-07FFF 06000-06FFF 05000-05FFF 04000-04FFF 03000-03FFF 02000-02FFF 01000-01FFF 00000-00FFF Size (KW ) 32 32 32 32 ... 32 32 32 4 4 4 4 4 4 4 4 Blk 32-Mbit Memory Addressing (Hex) 1F80001FFFFF 1F00001F7FFF 1E80001EFFFF 1E00001E7FFF ... 18000-1FFFF 10000-17FFF 08000-0FFFF 07000-07FFF 06000-06FFF 05000-05FFF 04000-04FFF 03000-03FFF 02000-02FFF 01000-01FFF 00000-00FFF Size (KW ) 32 32 32 32 . 32 32 32 4 4 4 4 4 4 4 4 Blk 64-Mbit Memory Addressing (Hex) 3F8000-3FFFFF 3F0000-3F7FFF 3E8000-3EFFFF 3E0000-3E7FFF ... 18000-1FFFF 10000-17FFF 08000-0FFFF 07000-07FFF 06000-06FFF 05000-05FFF 04000-04FFF 03000-03FFF 02000-02FFF 01000-01FFF 00000-00FFF
22 21 20 19 ... 10 9 8 7 6 5 4 3 2 1 0
38 37 36 35 ... 10 9 8 7 6 5 4 3 2 1 0
70 69 68 67 ... 10 9 8 7 6 5 4 3 2 1 0
134 133 132 131 ... 10 9 8 7 6 5 4 3 2 1 0
Datasheet 12
March 2008 290645-24
C3 Discrete
3.0
3.1
Figure 2:
Package Information
μBGA* and VF BGA Package μBGA* and VF BGA Package Drawing and Dimensions
C3 Discrete 8/16/32/64M, .25,.18, .13u ubga/VFBGA R0
Ball A1 Corner
D
S1
Ball A1 Corner
1
A B
2
3
4
5
6
7
8
A B C D E F
8
7
6
5
4
3
21
S2
E
C D E F
e
b
Top View - Bump Side down
Bottom View -Bump side up
A 1 A2 A Seating Plan
Y
Note: Drawing not to scale
Side View
Dimensions Symbol Package Height A Ball Height A1 Package Body Thickness A2 Ball (Lead) Width b Package Body Length 8M (.25) D Package Body Length 16M (.25/.18/.13) 32M (.25/.18/.13) D Package Body Length 64M (.18) D Package Body Width 8M (.25) E Package Body Width 16M (.25/.18/.13) 32M (.18/.13) E Package Body Width 32M (.25) E Package Body Width 64M (.18) E Pitch e Ball (Lead) Count 8M, 16M N Ball (Lead) Count 32M N Ball (Lead) Count 64M N Seating Plane Coplanarity Y Corner to Ball A1 Distance Along D 8M (.25) S1 Corner to Ball A1 Distance Along D 16M (.25/.18/.13) 32M (.18/.13) S1 Corner to Ball A1 Distance Along D 64M (.18) S1 Corner to Ball A1 Distance Along E 8M (.25) S2 Corner to Ball A1 Distance Along E 16M (.25/.18/.13) 32M (.18/.13) S2 Corner to Ball A1 Distance Along E 32M (.25) S2 Corner to Ball A1 Distance Along E 64M (.18) S2
Min 0.150 0.325 7.810 7.186 7.600 6.400 6.864 10.750 8.900
Millimeters Nom Max 1.000 0.665 0.375 7.910 7.286 7.700 6.500 6.964 10.850 9.000 0.750 46 47 48 1.330 1.018 1.225 1.375 1.607 3.550 2.625
Min 0.0059
Inches Nom
Max 0.0394
0.425 8.010 7.386 7.800 6.600 7.064 10.860 9.100
0.0128 0.2829 0.2992 0.2520 0.2702 0.4232 0.3504
0.0262 0.0148 0.2868 0.3031 0.2559 0.2742 0.4272 0.3543 0.0295 46 47 48 0.0524 0.0401 0.0482 0.0541 0.0633 0.1398 0.1033
0.0167 0.2908 0.3071 0.2598 0.2781 0.4276 0.3583
1.230 0.918 1.125 1.275 1.507 3.450 2.525
0.100 1.430 1.118 1.325 1.475 1.707 3.650 2.725
0.0484 0.0361 0.0443 0.0502 0.0593 0.1358 0.0994
0.0039 0.0563 0.0440 0.0522 0.0581 0.0672 0.1437 0.1073
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Datasheet 13
C3 Discrete
3.2
Figure 3:
TSOP Package
TSOP Package Drawing and Dimensions
Z
See Notes 1, 2, 3 and 4
Pin 1
A2
e E See Detail B
Y
D1 D
A1 Seating Plane
See Detail A
A
Detail A Detail B
C
b L
0
Notes: 1. One dimple on package denotes Pin 1. 2. If two dimples, then the larger dimple denotes Pin 1. 3. Pin 1 will always be in the upper left corner of the package, in reference to the product mark.
Table 3:
TSOP Package Dimensions
Millimeters Inches Max 1.200 0.050 0.950 0.150 0.100 18.200 11.800 1.000 0.200 0.150 18.400 12.000 0.500 19.800 0.500 20.000 0.600 48 0° 3° 5° 0.100 0.150 0.250 0.350 0.006 0.010 0° 20.200 0.700 0.780 0.020 1.050 0.300 0.200 18.600 12.200 0.002 0.037 0.006 0.004 0.717 0.465 0.039 0.008 0.006 0.724 0.472 0.0197 0.787 0.024 48 3° 5° 0.004 0.014 0.795 0.028 0.041 0.012 0.008 0.732 0.480 Min Nom Max 0.047 Symbol Min Nom A A1 A2 b c D1 E e D L N Θ Y Z
Parameter Package Height Standoff Package Body Thickness Lead Width Lead Thickness Package Body Length Package Body Width Lead Pitch Terminal Dimension Lead Tip Length Lead Count Lead Tip Angle Seating Plane Coplanarity Lead to Package Offset
Datasheet 14
March 2008 290645-24
C3 Discrete
3.3
Figure 4:
Easy BGA Package
Easy BGA Package Drawing and Dimension
Ball A1 Corner
D
S1
Ball A1 Corner
1 A B C D E E F G H
2
3
4
5
6
7
8 A B C D E F G
8
7
6
5
4
3
2
1
S2
b
e H
Top View - Ball side down
Bottom View - Ball Side Up
A1 A2 A
Seating Plane
Y
Note: Drawing not to scale
Side View
Dimensions Table
Package Height Ball Height Package Body Thickness Ball (Lead) Width Package Body Width Package Body Length Pitch Ball (Lead) Count Seating Plane Coplanarity Corner to Ball A1 Distance Along D Corner to Ball A1 Distance Along E Symbol A A1 A2 b D E [e] N Y S1 S2 Millimeters Min Nom 0.250 0.330 9.900 12.900 0.780 0.430 10.000 13.000 1.000 64 1.500 3.000 0.530 10.100 13.100 Max 1.200 Notes Inches Min 0.0098 0.0130 0.3898 0.5079 0.0307 0.0169 0.3937 0.5118 0.0394 64 0.0591 0.1181 0.0209 0.3976 0.5157 Nom Max 0.0472
1 1
1.400 2.900
0.100 1.600 3.100
1 1
0.0551 0.1142
0.0039 0.0630 0.1220
Note: (1) Package dimensions are for reference only. These dimensions are estimates based on die size, and are subject to change.
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Datasheet 15
C3 Discrete
4.0
Ballout and Signal Descriptions
The C3 device is available in 48-lead TSOP, 48-ball VF BGA, 48-ball μBGA, and Easy BGA packages. See Figure 5 on page 16, Figure 7 on page 18, and Figure 8 on page 19, respectively.
4.1
Figure 5:
48-Lead TSOP Package
48-Lead TSOP Package
64 M 32 M
16 M
A15 A14 A13 A12 A11 A10 A9 A8 A21 A20 WE# RP# VPP WP# A19 A18 A17 A7 A6 A5 A4 A3 A2 A1
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Advanced+ Boot Block 48-Lead TSOP 12 mm x 20 mm TOP VIEW
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
A16 VCCQ GND DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# GND CE# A0
Datasheet 16
March 2008 290645-24
C3 Discrete
Figure 6:
Mark for Pin-1 Indicator on 48-Lead 8-Mb, 16-Mb and 32-Mb TSOP
C urrent M ark:
N ew M ark:
Note:
The topside marking on 8 Mb, 16 Mb, and 32 Mb Numonyx™ Advanced and Advanced + Boot Block 48L TSOP products will convert to a white ink triangle as a Pin 1 indicator. Products without the white triangle will continue to use a dimple as a Pin 1 indicator. There are no other changes in package size, materials, functionality, customer handling, or manufacturability. Product will continue to meet Numonyx stringent quality requirements. Products affected are Numonyx Ordering Codes shown in Table 4. 48-Lead TSOP
Extended 32 Mbit TE28F320C3TD70 TE28F320C3BD70 TE28F320C3TC70 TE28F320C3BC70 TE28F320C3TC90 TE28F320C3BC90 TE28F320C3TA100 TE28F320C3BA100 TE28F320C3TA110 TE28F320C3BA110 Extended 16 Mbit TE28F160C3TD70 TE28F160C3BD70 TE28F160C3TC80 TE28F160C3BC80 TE28F160C3TA90 TE28F160C3BA90 TE28F160C3TA110 TE28F160C3BA110 Extended TE28F800C3TA90 TE28F800C3BA90 TE28F800C3TA110 TE28F800C3BA110
Table 4:
Extended 64 Mbit
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Datasheet 17
C3 Discrete
Figure 7:
48-Ball µBGA* and 48-Ball VF BGA Chip Scale Package (Top View, Ball Down)1,2,3
1 2 3 4 5 16M A A13 A11 A8 VPP WP# A19 A7 A4 6 7 8
B
A14
A10
WE# 64M
RP# 32M A21
A18
A17
A5
A2
C
A15
A12
A9
A20
A6
A3
A1
D
A16
D14
D5
D11
D2
D8
CE#
A0
E
VCCQ
D15
D6
D12
D3
D9
D0
GND
F
GND
D7
D13
D4
VCC
D10
D1
OE#
Notes: 1. Shaded connections indicate the upgrade address connections. Numonyx recommends to not use routing in this area. 2. A19 denotes 16 Mbit; A20 denotes 32 Mbit; A21 denotes 64 Mbit. 3. Unused address balls are not populated.
Datasheet 18
March 2008 290645-24
C3 Discrete
4.2
Figure 8:
64-Ball Easy BGA Package
64-Ball Easy BGA Package1,2
1 A A1 B A2 C A3 D A4 E DQ8 DQ1 DQ9 DQ3 DQ12 DQ6 F CE# DQ0 DQ10 DQ11 DQ5 DQ14 DU G A0 H A22(2) OE# VCCQ VCC VSSQ DQ7 VCCQ DU VSSQ DQ2 DQ4 DQ13 DQ15 VSSQ A16 H DU VCCQ D7 VSSQ VCC VCCQ OE# A22(2) DU G A16 VSSQ D15 D13 DQ4 DQ2 VSSQ A0 DU DU F DU DU DQ14 DQ5 DQ11 DQ10 DQ0 CE# A5 DU DU DU DU A8 A9 E DU DU DQ6 DQ DQ3 DQ9 DQ1 DQ8 12 A7 W P# W E# DU A21(1) A12 A13 D A9 A8 DU DU DU DU A5 A4 A17 A19(1) RP# DU A20(1) A11 A14 C A13 A12 A21(1) DU WE# W P# A7 A3 A6 A18 VPP VCC GND A10 A15 B A14 A11 A20(1) DU RP# A19(1) A17 A2 2 3 4 5 6 7 8 A A15 A10 GND VCC VPP A18 A6 A1 8 7 6 5 4 3 2 1
Top View Ball Side Notes: 1. A19 denotes 16 Mbit; A20 denotes 32 Mbit; A21 denotes 64 Mbit. 2. Unused address balls are not populated.
Bottom View - Ball Side
4.3
Table 5:
Symbol
Signal Descriptions
Signal Descriptions
Type Description ADDRESS INPUTS for memory addresses. Address are internally latched during a program or erase cycle. 8 Mbit: AMAX= A18 16 Mbit: AMAX = A19 32 Mbit: AMAX = A20 64 Mbit: AMAX = A21 DATA INPUTS/OUTPUTS: Inputs data and commands during a write cycle; outputs data during read cycles. Inputs commands to the Command User Interface when CE# and WE# are active. Data is internally latched. The data pins float to tri-state when the chip is de-selected or the outputs are disabled. CHIP ENABLE: Active-low input. Activates the internal control logic, input buffers, decoders and sense amplifiers. CE# is active low. CE# high de-selects the memory device and reduces power consumption to standby levels. OUTPUT ENABLE: Active-low input. Enables the device’s outputs through the data buffers during a Read operation. RESET/DEEP POWER-DOWN: Active-low input. When RP# is at logic low, the device is in reset/deep power-down mode, which drives the outputs to High-Z, resets the Write State Machine, and minimizes current levels (ICCD). When RP# is at logic high, the device is in standard operation. When RP# transitions from logic-low to logic-high, the device resets all blocks to locked and defaults to the read array mode.
A[MAX:0]
Input
DQ[15:0]
Input/ Output
CE#
Input
OE#
Input
RP#
Input
March 2008 290645-24
Datasheet 19
C3 Discrete
Table 5:
Symbol WE#
Signal Descriptions
Type Input Description WRITE ENABLE: Active-low input. WE# controls writes to the device. Address and data are latched on the rising edge of the WE# pulse. WRITE PROTECT: Active-low input. When WP# is a logic low, the lock-down mechanism is enabled and blocks marked lock-down cannot be unlocked through software. When WP# is logic high, the lock-down mechanism is disabled and blocks previously locked-down are now locked and can be unlocked and locked through software. After WP# goes low, any blocks previously marked lock-down revert to the lock-down state. See Section 11.0, “Security Modes” on page 48 for details on block locking. PROGRAM/ERASE Power Supply: Operates as an input at logic levels to control complete device protection. Supplies power for accelerated Program and Erase operations in 12 V ± 5% range. Do not leave this pin floating. Lower VPP ≤ VPPLK to protect all contents against Program and Erase commands. Set VPP = VCC for in-system Read, Program and Erase operations. In this configuration, VPP can drop as low as 1.65 V to allow for resistor or diode drop from the system supply. Apply VPP to 12 V ± 5% for faster program and erase in a production environment. Applying 12 V ± 5% to VPP can only be done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the boot blocks. VPP can be connected to 12 V for a total of 80 hours maximum. See Section 11.6 for details on VPP voltage configurations. DEVICE CORE Power Supply: Supplies power for device operations. OUTPUT Power Supply: Output-driven source voltage. This ball can be tied directly to VCC if operating within VCC range. Ground: For all internal circuitry. All ground inputs must be connected. Do Not Use: Do not use this ball. This ball must not be connected to any power supplies, signals or other balls,; it must be left floating. No Connect
WP#
Input
VPP
Input/ Power
VCC VCCQ GND DU NC
Power Power Power — —
Datasheet 20
March 2008 290645-24
C3 Discrete
5.0
5.1
Warning:
Maximum Ratings and Operating Conditions
Absolute Maximum Ratings
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage. These ratings are stress ratings only. Operation beyond the “Operating Conditions” is not recommended, and extended exposure beyond the “Operating Conditions” may affect device reliability.
.
NOTICE: Specifications are subject to change without notice. Verify with your local Numonyx Sales office that you have the latest datasheet before finalizing a design.
Parameter Extended Operating Temperature During Read During Block Erase and Program Temperature under Bias Storage Temperature Voltage On Any Pin (except VCC and VPP) with Respect to GND VPP Voltage (for Block Erase and Program) with Respect to GND VCC and VCCQ Supply Voltage with Respect to GND Output Short Circuit Current
Maximum Rating
Notes
–40 °C to +85 °C –40 °C to +85 °C –40 °C to +85 °C –65 °C to +125 °C
–0.5 V to +3.7 V
–0.5 V to +13.5 V –0.2 V to +3.6 V 100 mA
1 1,2,3
4
Notes: 1. Minimum DC voltage is –0.5 V on input/output pins. During transitions, this level may undershoot to –2.0 V for periods
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