1N4531

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product data sheet Supersedes data of April 1996 1996 Sep 03 NXP Semiconductors Product data sheet High-speed diodes FEATURES • Hermetically sealed leaded glass SOD68 (DO-34) package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V • Repetitive peak forward current: max. 450 mA. The diodes are type branded. 1N4531; 1N4532 DESCRIPTION The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. k handbook, halfpage a MAM156 APPLICATIONS • High-speed switching • Protection diodes in reed relays. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj total power dissipation storage temperature junction temperature Tamb = 25 °C − − − − −65 − 4 1 0.5 500 +200 200 A A A mW °C °C see Fig.2 CONDITIONS MIN. − − − − MAX. 75 75 200 450 V V mA mA UNIT Fig.1 Simplified outline (SOD68; DO-34) and symbol. 1996 Sep 03 2 NXP Semiconductors Product data sheet High-speed diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current IN4531 IN4532 Cd diode capacitance IN4531 IN4532 trr reverse recovery time IN4531 IN4532 reverse recovery time IN4532 Vfr forward recovery voltage when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 when switched from IF = 100 mA; tr ≤ 30 ns; see Fig.8 see Fig.5 VR = 2 0 V VR = 20 V; Tj = 150 °C VR = 5 0 V VR = 50 V; Tj = 150 °C f = 1 MHz; VR = 0; see Fig.6 CONDITIONS IF = 10 mA; see Fig.3 1N4531; 1N4532 MIN. − − − − − − − − − − − MAX. 1 000 25 50 100 100 4 2 4 2 4 3 UNIT mV nA µA nA µA pF pF ns ns ns V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 5 mm lead length 5 mm; note 1 VALUE 120 350 UNIT K/W K/W 1996 Sep 03 3 NXP Semiconductors Product data sheet High-speed diodes GRAPHICAL DATA 1N4531; 1N4532 handbook, halfpage 300 MBG450 handbook, halfpage 600 MBG458 IF (mA) 200 IF (mA) 400 (1) (2) (3) 100 200 0 0 100 Tamb (oC) 200 0 0 (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. 1 VF (V) 2 Lead length 5 mm. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10−1 1 10 102 103 tp (µs) 104 Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 03 4 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 103 handbook, halfpage IR (µA) MGD010 MGD004 handbook, halfpage 1.2 102 Cd (pF) 1.0 10 0.8 1 10−1 0.6 10−2 0 100 Tj (oC) 200 0.4 0 10 VR (V) 20 VR = 50 V Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 03 5 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R = 50 Ω i VR 90% tp t RS = 50 Ω V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω I 90% V R S = 50 Ω D.U.T. OSCILLOSCOPE R i = 50 Ω 10% MGA882 V fr t tr tp t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 03 6 NXP Semiconductors Product data sheet High-speed diodes PACKAGE OUTLINE 1N4531; 1N4532 handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. Fig.9 SOD68 (DO-34). 1996 Sep 03 7 NXP Semiconductors Product data sheet High-speed diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION 1N4531; 1N4532 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1996 Sep 03 8 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands Date of release: 1996 Sep 03