2N7002

SO T2 3 2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits  Suitable for logic level gate drive sources  Surface-mounted package  Trench MOSFET technology  Very fast switching 1.3 Applications  Logic level translators  High-speed line drivers 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - - 60 V ID drain current VGS = 10 V; Tsp = 25 °C; see Figure 1; see Figure 3 - - 300 mA Ptot total power dissipation Tsp = 25 °C; see Figure 2 - - 0.83 W VGS = 10 V; ID = 500 mA; Tj = 25 °C; see Figure 6; see Figure 8 - 2.8 5 Ω Static characteristics drain-source on-state resistance RDSon 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 SOT23 (TO-236AB) mbb076 S 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package 2N7002 Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002 12% [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 60 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage -30 30 V VGSM peak gate-source voltage pulsed; tp ≤ 50 µs; δ = 0.25 -40 40 V ID drain current VGS = 10 V; Tsp = 25 °C; see Figure 1; see Figure 3 - 300 mA VGS = 10 V; Tsp = 100 °C; see Figure 1 - 190 mA IDM peak drain current pulsed; tp ≤ 10 µs; Tsp = 25 °C; see Figure 3 - 1.2 A Ptot total power dissipation Tsp = 25 °C; see Figure 2 - 0.83 W Tj junction temperature -65 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tsp = 25 °C - 300 mA ISM peak source current pulsed; tp ≤ 10 µs; Tsp = 25 °C - 1.2 A 2N7002 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 © NXP B.V. 2011. All rights reserved. 2 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 03aa25 120 03aa17 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 Tsp (°C) Fig 1. 150 200 Tsp (°C) Normalized continuous drain current as a function of solder point temperature Fig 2. Normalized total power dissipation as a function of solder point temperature 003aab350 10 ID (A) Limit RDSon = VDS / ID tp = 10 µs 1 100 µs 10-1 1 ms DC 10 ms 100 ms 10-2 1 Fig 3. 10 102 VDS (V) Safe operating area; continous and peak drain currents as a function of drain-source voltage 2N7002 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 © NXP B.V. 2011. All rights reserved. 3 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient Mounted on a printed-circuit board; minimum footprint ; vertical in still air - - 350 K/W Rth(j-sp) thermal resistance from junction to solder point see Figure 4 - - 150 K/W 003aab351 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.2 0.1 10 δ= P 0.05 tp T 0.02 single pulse t tp T 1 10-5 Fig 4. 10-4 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to solder point as a function of pulse duration 2N7002 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 © NXP B.V. 2011. All rights reserved. 4 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V; Tj = 25 °C 60 - - V ID = 10 µA; VGS = 0 V; Tj = -55 °C 55 - - V VGSth gate-source threshold voltage ID = 0.25 mA; VDS = VGS; Tj = 25 °C; see Figure 9; see Figure 10 1 2 2.5 V ID = 0.25 mA; VDS = VGS; Tj = 150 °C; see Figure 9; see Figure 10 0.6 - - V ID = 0.25 mA; VDS = VGS; Tj = -55 °C; see Figure 9; see Figure 10 - - 2.75 V IDSS drain leakage current VDS = 48 V; VGS = 0 V; Tj = 25 °C - 0.01 1 µA VDS = 48 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 15 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -15 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 10 V; ID = 500 mA; Tj = 25 °C; see Figure 6; see Figure 8 - 2.8 5 Ω VGS = 10 V; ID = 500 mA; Tj = 150 °C; see Figure 6; see Figure 8 - - 9.25 Ω VGS = 4.5 V; ID = 75 mA; Tj = 25 °C; see Figure 6; see Figure 8 - 3.8 5.3 Ω VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 31 50 pF - 6.8 30 pF - 3.5 10 pF VGS = 10 V; VDS = 50 V; RL = 250 Ω; RG(ext) = 50 Ω; RGS = 50 Ω - 2.5 10 ns - 11 15 ns RDSon drain-source on-state resistance Dynamic characteristics Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance ton turn-on time toff turn-off time Source-drain diode VSD source-drain voltage IS = 300 mA; VGS = 0 V; Tj = 25 °C; see Figure 11 - 0.85 1.5 V Qr recovered charge - 30 - nC trr reverse recovery time VGS = 0 V; IS = 300 mA; dIS/dt = -100 A/µs - 30 - ns 2N7002 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 © NXP B.V. 2011. All rights reserved. 5 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 003aab352 1 10 ID (A) 5 003aab353 10000 VGS (V) = 4 RDSon (mΩ) 0.8 8000 4.5 4.5 0.6 6000 4 5 0.4 4000 10 VGS (V) = 3.5 0.2 2000 0 0 0 Fig 5. 1 2 3 VDS (V) 4 Output characteristics: drain current as a function of drain-source voltage; typical values 0 Fig 6. 003aab354 1 ID (A) 0.2 0.4 0.6 0.8 ID (A) 1 Drain-source on-state resistance as a function of drain current; typical values 03aa28 2.4 a 0.8 1.8 0.6 1.2 0.4 Tj = 150 °C 25 °C 0.6 0.2 0 0 Fig 7. 2 4 VGS (V) Transfer characteristics: drain current as a function of gate-source voltage; typical values 2N7002 Product data sheet 0 −60 6 Fig 8. 0 60 120 180 Tj (°C) Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 © NXP B.V. 2011. All rights reserved. 6 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 003aab101 3 VGS(th) (V) typ 10-4 min 1 0 -60 Fig 9. ID (A) max 2 003aab100 10-3 min typ max 10-5 10-6 0 60 120 Tj (°C) Gate-source threshold voltage as a function of junction temperature 003aab356 1 0 180 1 2 VGS (V) 3 Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab357 102 IS (A) 0.8 C (pF) Ciss 0.6 10 0.4 Coss Crss 0.2 Tj = 25 °C 150 °C 0 0.2 0.4 0.6 0.8 VSD (V) 1 Fig 11. Source current as a function of source-drain voltage; typical values 2N7002 Product data sheet 1 10-1 1 10 VDS (V) 102 Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 © NXP B.V. 2011. All rights reserved. 7 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 13. Package outline SOT23 (TO-236AB) 2N7002 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 © NXP B.V. 2011. All rights reserved. 8 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 9. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 14. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 15. Wave soldering footprint for SOT23 (TO-236AB) 2N7002 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 © NXP B.V. 2011. All rights reserved. 9 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002 v.7 20110908 Product data sheet - 2N7002 v.6 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. 2N7002 v.6 20060428 Product data sheet 2N7002 v.5 2N7002 v.5 20051115 Product data sheet 2N7002 v.4 2N7002 v.4 20050426 Product data sheet 2N7002 v.3 2N7002 v.3 20000727 Product specification 2N7002 v.2 19970617 Product specification 2N7002 v.1 19901031 Product specification 2N7002 Product data sheet HZG336 2N7002 v.2 2N7002 v.1 - All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 - © NXP B.V. 2011. All rights reserved. 10 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 11. Legal information 11.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 2N7002 Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 © NXP B.V. 2011. All rights reserved. 11 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2N7002 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 © NXP B.V. 2011. All rights reserved. 12 of 13 2N7002 NXP Semiconductors 60 V, 300 mA N-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .1 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 September 2011 Document identifier: 2N7002