AFT20S015NR1

NXP Semiconductors Technical Data Document Number: AFT20S015N Rev. 2, 04/2020 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz. AFT20S015N AFT20S015GN 2100 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) 1805–2700 MHz, 1.5 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS IRL (dB) 2110 MHz 17.5 22.0 8.9 --43.0 --11 2140 MHz 17.6 22.0 9.0 --44.0 --12 2170 MHz 17.6 22.0 9.1 --44.0 --14 TO--270--2 PLASTIC AFT20S015N 1800 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 1805 MHz 18.0 21.0 9.2 --42.0 --11 1840 MHz 18.1 22.0 9.2 --44.0 --10 1880 MHz 18.0 22.0 9.1 --45.0 --10 TO--270--2 GULL PLASTIC AFT20S015GN 2600 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 2.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2300 MHz 15.7 23.0 9.0 --45.0 --6 2400 MHz 16.0 23.0 8.8 --44.0 --7 2500 MHz 15.8 23.0 8.6 --43.0 --6 2600 MHz 15.8 21.0 8.5 --43.0 --7 2700 MHz 15.5 20.0 8.4 --42.0 --8 RFin/VGS RFout/VDS (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Features  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems  Optimized for Doherty applications  2013, 2020 NXP B.V. RF Device Data NXP Semiconductors AFT20S015N AFT20S015GN 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C TC --40 to +150 C Case Operating Temperature Range Operating Junction Temperature Range (1,2) CW Operation @ TC = 25C Derate above 25C TJ --40 to +225 C CW 11 0.1 W W/C Symbol Value (2,3) Unit RJC 4.2 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 77C, 1.5 W CW, 28 Vdc, IDQ = 132 mA, 2140 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 17.6 Adc) VGS(th) 1.5 2.0 2.5 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 132 mAdc, Measured in Functional Test) VGS(Q) 2.4 3.0 3.4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 176 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. (continued) AFT20S015N AFT20S015GN 2 RF Device Data NXP Semiconductors Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit (1,2) Functional Tests (In NXP Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 16.0 17.6 19.0 dB Drain Efficiency D 20.0 22.0 — % PAR 8.6 9.1 — dB ACPR — --44.0 --41.0 dBc IRL — --14 --9 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Load Mismatch (In NXP Test Fixture, 50 ohm system) IDQ = 132 mA, f = 2140 MHz VSWR 10:1 at 32 Vdc, 14 W CW (3) Output Power (3 dB Input Overdrive from 12 W CW (3) Rated Power) No Device Degradation Typical Performance (In NXP Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 132 mA, 2110--2170 MHz Bandwidth P1dB — 16.2 (3,4) — W  — --16 —  VBWres — 170 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 1.5 W Avg. GF — 0.05 — dB Gain Variation over Temperature (--30C to +85C) G — 0.01 — dB/C P1dB — 0.004 — dB/C Pout @ 1 dB Compression Point, CW AM/PM (Maximum value measured at the P3dB compression point across the 2110--2170 MHz frequency range.) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (--30C to +85C) (3) Table 6. Ordering Information Device AFT20S015NR1 AFT20S015GNR1 Tape and Reel Information R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel Package TO--270--2 TO--270G--2 1. Part internally matched on input. 2. Measurements made with device in straight lead configuration, before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Calculated from load pull P3dB measurements. AFT20S015N AFT20S015GN RF Device Data NXP Semiconductors 3 C15 C27 C9 D47530 VGS C19 C21 VDD C7 C13 C23 C5* C11 C25 C17 C2* R1 R2 C14 C12 C6* C18 C26 C24 C8 VGS C20 C10 C4* C3 CUT OUT AREA C1* VDD C22 AFT20S015N Rev. 2 C28 C16 *C1, C2, C4, C5 and C6 are mounted vertically. Note: NXP has begun the transition of marking printed circuit boards (PCBs) with the NXP exception logo. PCBs may have either Freescale or NXP markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. AFT20S015N Test Circuit Component Layout — 2110--2170 MHz Table 7. AFT20S015N Test Circuit Component Designations and Values — 2110--2170 MHz Part Description Part Number Manufacturer C1 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C2 2.4 pF Chip Capacitor ATC800B2R4BT500XT ATC C3 1.7 pF Chip Capacitor ATC100B1R7BT500XT ATC C4 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C5, C6 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C7, C8 240 pF Chip Capacitors ATC100B241JT200XT ATC C9, C10, C21, C22 220 pF Chip Capacitors C1812C224K5RAC--TU Kemet C11, C12, C23, C24 0.1 F Chip Capacitors CDR33BX104AKWS AVX C13, C14, C25, C26 2.2 F Chip Capacitors C1825C225J5RAC--TU Kemet C15, C16 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C17, C18, C19, C20 75 pF Chip Capacitors ATC800B750JT500XT ATC C27, C28 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2 1  Chip Resistors CRCW12061R00FKEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D47530 MTL AFT20S015N AFT20S015GN 4 RF Device Data NXP Semiconductors Gps, POWER GAIN (dB) 17.8 22 17.7 21.5 Gps 17.6 17.5 21 IRL 17.4 17.3 PARC --41 --9 --42 --13 --43 ACPR 17.2 --44 17.1 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 17 2060 2080 2100 2120 2140 2160 2180 2200 --45 --46 2220 --17 --21 --25 --29 --0.4 --0.6 --0.8 --1 --1.2 PARC (dB) 17.9 IRL, INPUT RETURN LOSS (dB) 23 VDD = 28 Vdc, Pout = 1.5 W (Avg.) IDQ = 132 mA, Single--Carrier W--CDMA 22.5 D ACPR (dBc) 18 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 2110--2170 MHZ --1.4 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.5 Watts Avg. --10 VDD = 28 Vdc, Pout = 10 W (PEP), IDQ = 132 mA Two--Tone Measurements, (f1 + f2)/2 = Center --20 Frequency of 2140 MHz IM3--U IM3--L --30 IM5--U --40 IM5--L IM7--U --50 IM7--L --60 1 100 10 200 TWO--TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing 17 16.5 16 15.5 --1 --1 dB = 1.5 W D --2 dB = 2.2 W --2 --25 50 --30 40 Gps --3 --4 60 ACPR 30 --3 dB = 3 W 20 PARC --5 VDD = 28 Vdc, IDQ = 132 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF --6 2 5 1 3 4 6 --35 --40 ACPR (dBc) 17.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 18 0 D DRAIN EFFICIENCY (%) 18.5 --45 10 --50 0 --55 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT20S015N AFT20S015GN RF Device Data NXP Semiconductors 5 TYPICAL CHARACTERISTICS — 2110--2170 MHz Gps, POWER GAIN (dB) 19 2140 MHz 18 ACPR --10 30 2170 MHz 2140 MHz 2110 MHz 15 50 40 2110 MHz 16 0 2170 MHz Gps 17 14 2170 MHz D 60 20 10 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF --30 --40 --50 --60 0 20 10 1 --20 ACPR (dBc) 2140 MHz VDD = 28 Vdc, IDQ = 132 mA Single--Carrier W--CDMA 2110 MHz D, DRAIN EFFICIENCY (%) 20 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 20 21 10 Gain 17 0 15 --10 13 --20 IRL --30 11 9 1700 IRL (dB) GAIN (dB) 19 VDD = 28 Vdc Pin = 0 dBm IDQ = 132 mA 1800 1900 2000 2100 2200 2300 2400 --40 2500 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response AFT20S015N AFT20S015GN 6 RF Device Data NXP Semiconductors ALTERNATE CHARACTERIZATION — 1805--1880 MHz C16 C28 C10 D45064 VGS C20 VDD C8 C14 C6* C12 C18 C22 C24 C2* R1 R2 C15 C13 C4* C3* C7* CUT OUT AREA C1* C26 C5* C19 C23 C25 C27 C9 VGS VDD C21 C11 AFT20S015N Rev. 2 C29 C17 *C1, C2, C3, C4, C5, C6 and C7 are mounted vertically. Note: NXP has begun the transition of marking printed circuit boards (PCBs) with the NXP exception logo. PCBs may have either Freescale or NXP markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 8. AFT20S015N Test Circuit Component Layout — 1805--1880 MHz Table 8. AFT20S015N Test Circuit Component Designations and Values — 1805--1880 MHz Part Description Part Number Manufacturer C1 11 pF Chip Capacitor ATC100B11R0CT500XT ATC C2, C3 3.3 pF Chip Capacitors ATC800B3R3BT500XT ATC C4, C5 47 pF Chip Capacitors ATC600F47BT250XT ATC C6, C7 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C8, C9 240 pF Chip Capacitors ATC100B241JT200XT ATC C10, C11, C22, C23 220 pF Chip Capacitors C1812C224K5RAC--TU Kemet C12, C13, C24, C25 0.1 F Chip Capacitors CDR33BX104AKWS AVX C14, C15, C26, C27 2.2 F, 50 V Chip Capacitors C1825C225J5RAC--TU Kemet C16, C17 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C18, C19, C20, C21 75 pF Chip Capacitors ATC800B750JT500XT ATC C28, C29 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2 1  Chip Resistors CRCW12061R00FKEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D45064 MTL AFT20S015N AFT20S015GN RF Device Data NXP Semiconductors 7 ALTERNATE CHARACTERIZATION — 1805--1880 MHz Gps 18.2 18 ACPR 17.8 17.6 17.2 17 1760 1780 --9 --42 --9.5 --43 PARC 17.4 --41 --44 IRL --45 1800 --46 1920 1820 1840 1860 1880 1900 --10 --10.5 --11 --11.5 --0.3 --0.4 --0.5 --0.6 --0.7 PARC (dB) Gps, POWER GAIN (dB) 18.4 22 21 VDD = 28 Vdc, Pout = 1.5 W (Avg.) IDQ = 132 mA, Single--Carrier W--CDMA 20 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 19 IRL, INPUT RETURN LOSS (dB) D 18.6 D, DRAIN EFFICIENCY (%) 23 ACPR (dBc) 19 18.8 --0.8 f, FREQUENCY (MHz) Figure 9. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.5 Watts Avg. 18 1805 MHz ACPR 25 --30 15 10 1880 MHz 17.9 --25 20 Gps 18.1 D 1880 MHz 30 1805 MHz 1880 MHz 1840 MHz 5 17.8 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 1 0.1 5 --35 --40 --45 ACPR (dBc) 1805 MHz 1840 MHz VDD = 28 Vdc, IDQ = 132 mA Single--Carrier W--CDMA 18.3 3.84 MHz Channel Bandwidth 1840 MHz 18.2 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 18.4 --50 --55 0 Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 21 Gain --2 17 --4 15 --6 13 --8 IRL --10 11 9 1400 IRL (dB) GAIN (dB) 19 VDD = 28 Vdc Pin = 0 dBm IDQ = 132 mA 1500 1600 1700 1800 1900 2000 2100 --12 2200 f, FREQUENCY (MHz) Figure 11. Broadband Frequency Response AFT20S015N AFT20S015GN 8 RF Device Data NXP Semiconductors ALTERNATE CHARACTERIZATION — 2300--2700 MHz C15 C20 C9 D48048 VGS C18 C19 C7 C13 C11 C5 C4* C17 C2* C1* VDD C21 C3* R1 C14 C6 C12 CUT OUT AREA R2 C8 VGS VDD C10 AFT20S015N 2.6 GHz Rev. 0 C16 *C1, C2, C3 and C4 are mounted vertically. Note: NXP has begun the transition of marking printed circuit boards (PCBs) with the NXP exception logo. PCBs may have either Freescale or NXP markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 12. AFT20S015N Test Circuit Component Layout — 2300--2700 MHz Table 9. AFT20S015N Test Circuit Component Designations and Values — 2300--2700 MHz Part Description Part Number Manufacturer C1 4.3 pF Chip Capacitor ATC600F4R3CT250XT ATC C2 1.3 pF Chip Capacitor ATC800B1R3BT500XT ATC C3 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC C4 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC C5, C6 6.8 pF Chip Capacitors ATC800B6R8CT500XT ATC C7, C8, C17 2.2 F Chip Capacitors C3225X7R1H225KT TDK C9, C10, C18 220 nF Chip Capacitors C1812C224K5RAC--TU Kemet C11, C12, C19 0.1 F Chip Capacitors CDR33BX104AKWS AVX C13, C14, C21 2.2 F Chip Capacitors C1825C225J5RAC--TU Kemet C15, C16 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C20 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp R1, R2 4.75  Chip Resistors CRCW12064R75FKEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D48048 MTL AFT20S015N AFT20S015GN RF Device Data NXP Semiconductors 9 ALTERNATE CHARACTERIZATION — 2300--2700 MHz 19 Gps 15.5 17 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ ACPR 0.01% Probability on CCDF 15 14.5 --39 0 --41 --2 --43 14 13.5 --45 IRL 13 12.5 2200 --47 PARC 2275 2350 2425 2500 2575 2650 --6 --8 --10 --49 2800 2725 --4 --0.6 --0.8 --1 --1.2 --1.4 PARC (dB) 16 IRL, INPUT RETURN LOSS (dB) D 16.5 Gps, POWER GAIN (dB) 25 VDD = 28 Vdc, Pout = 2.1 W (Avg.) IDQ = 132 mA 23 21 D, DRAIN EFFICIENCY (%) 17 ACPR (dBc) 17.5 --1.6 f, FREQUENCY (MHz) Figure 13. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 2.1 Watts Avg. 2300 MHz 2500 MHz D 2700 MHz --25 25 --30 20 15.8 Gps 15.6 15.4 30 15 2300 MHz 2500 MHz 2700 MHz 10 2300 MHz 5 ACPR 2700 MHz 2500 MHz Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0 1 5 15.2 15 0.1 --35 --40 --45 ACPR (dBc) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQ = 132 mA Single--Carrier W--CDMA 16 3.84 MHz Channel Bandwidth D, DRAIN EFFICIENCY (%) 16.2 --50 --55 Pout, OUTPUT POWER (WATTS) AVG. Figure 14. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 2 21 0 GAIN (dB) 17 --2 Gain 15 --4 13 --6 IRL 11 9 2100 2250 2400 2550 2700 IRL (dB) 19 VDD = 28 Vdc Pin = 0 dBm IDQ = 132 mA --8 2850 3000 3150 --10 3300 f, FREQUENCY (MHz) Figure 15. Broadband Frequency Response AFT20S015N AFT20S015GN 10 RF Device Data NXP Semiconductors PACKAGE INFORMATION AFT20S015N AFT20S015GN RF Device Data NXP Semiconductors 11 AFT20S015N AFT20S015GN 12 RF Device Data NXP Semiconductors AFT20S015N AFT20S015GN RF Device Data NXP Semiconductors 13 AFT20S015N AFT20S015GN 14 RF Device Data NXP Semiconductors AFT20S015N AFT20S015GN RF Device Data NXP Semiconductors 15 AFT20S015N AFT20S015GN 16 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes  AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers  AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Apr. 2013  Initial Release of Data Sheet 1 Nov. 2013  Upper frequency limit changed from 2690 to 2700 MHz to reflect measurement data, p. 1  Table 2, Thermal Characteristics: changed 2170 to 2140 MHz to reflect recent thermal test results, p. 2  Table 5, Electrical Characteristics, Load Mismatch: updated VSWR power levels (8 W CW to 14 W CW, 7 W CW to 12 W CW) to reflect recent characterization data test results, p. 3  Table 5, Electrical Characteristics, Typical Performance: changed P1dB from 7 W to 16.2 W based on P3dB load pull calculations, p. 3  Figs. 2, 8, 12, Test Circuit Component Layout: added MTL number, pp. 4, 7, 9  Tables 6, 7, 8, Test Circuit Component Designations and Values: updated PCB description to reflect most current board specifications from Rogers and added MTL part number, pp. 4, 7, 9 2 Apr. 2020  Package Outline Drawings: TO–270–2 package outline updated to Rev. R, pp. 11–13. TO–270G–2 package outline updated to Rev. D, pp. 14–16.  General updates made to align data sheet to current standard AFT20S015N AFT20S015GN RF Device Data NXP Semiconductors 17 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo, Freescale, the Freescale logo and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2013, 2020 NXP B.V. AFT20S015N AFT20S015GN Document Number: AFT20S015N Rev. 2, 04/2020 18 RF Device Data NXP Semiconductors