AFT27S012NT1

NXP Semiconductors Technical Data Document Number: AFT27S012N Rev. 0, 07/2017 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET AFT27S012NT1 This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) 2100 MHz Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2110 MHz 20.8 22.0 9.8 –41.1 –9 2140 MHz 20.9 22.6 9.6 –40.7 –10 2170 MHz 20.9 22.8 9.4 –40.8 –10 2200 MHz 20.8 22.9 9.3 –40.4 –9 728–2700 MHz, 1.26 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR PLD--1.5W PLASTIC 1. All data measured in fixture with device soldered to heatsink. Features  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems  Universal broadband driven device with internal RF feedback RFin/VGS RFout/VDS (Top View) Note: The center pad on the backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  2017 NXP B.V. RF Device Data NXP Semiconductors AFT27S012NT1 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +150 C (1,2) TJ --40 to +150 C Characteristic Symbol Value (2,3) Unit RJC 3.4 C/W Operating Junction Temperature Range Table 2. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 77C, 1.3 W CW, 28 Vdc, IDQ = 110 mA, 2450 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Charge Device Model (per JESD22--C101) C3 Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 15.4 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 90 mAdc, Measured in Functional Test) VGS(Q) 1.5 1.8 2.3 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 154 mAdc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. (continued) AFT27S012NT1 2 RF Device Data NXP Semiconductors Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In NXP Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 20.0 20.9 — dB Drain Efficiency D 18.5 22.8 — % ACPR — --40.8 –37.9 dBc IRL — --12 –9 dB Adjacent Channel Power Ratio Input Return Loss Load Mismatch (In NXP Test Fixture, 50 ohm system) IDQ = 90 mA, f = 2140 MHz VSWR 10:1 at 32 Vdc, 16.6 W CW Output Power (3 dB Input Overdrive from 125 mW CW Rated Power) No Device Degradation Typical Performance(1) (In NXP Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, 2110--2200 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 13 — W AM/PM (Maximum value measured at the P3dB compression point across the 2110--2200 MHz frequency range.)  — –13 —  Gain Flatness in 90 MHz Bandwidth @ Pout = 1.26 W Avg. GF — 0.20 — dB Gain Variation over Temperature (--30C to +85C) G — 0.004 — dB/C P1dB — 0.010 — dB/C Output Power Variation over Temperature (--30C to +85C) Table 6. Ordering Information Device AFT27S012NT1 Tape and Reel Information T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel Package PLD--1.5W 1. All data measured in fixture with device soldered to heatsink. AFT27S012NT1 RF Device Data NXP Semiconductors 3 VGG VDD C7 C13 C6 C12 C8 R1 C1* Q1 C2 C5* C4 C3 C9 AFT27S010N Rev. 2 2100MHz C10 C11 D53402 VDD *C1 and C5 are mounted vertically. NOTE: All data measured in fixture with device soldered to heatsink. AFT27S012N uses the AFT27S0101N production fixture; board and parts list are identical. Figure 2. AFT27S010NT1 Test Circuit Component Layout — 2110--2200 MHz Table 7. AFT27S010NT1 Test Circuit Component Designations and Values — 2110--2200 MHz Part Description Part Number Manufacturer C1, C5, C6, C8, C9 9.1 pF Chip Capacitors ATC100B9R1JT500XT ATC C2 1.1 pF Chip Capacitor ATC100B1R1JT500XT ATC C3 2.0 pF Chip Capacitor ATC100B2R0JT500XT ATC C4 1.0 pF Chip Capacitor ATC100B1R0JT500XT ATC C7, C10, C11, C12, C13 10 F Chip Capacitors GRM32ER61H106KA12L Murata Q1 RF Power LDMOS Transistor AFT27S010N NXP R1 2.37  Chip Resistor CRCW12062R37FKEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D53402 MTL AFT27S012NT1 4 RF Device Data NXP Semiconductors 0.28 7.11 0.165 4.91 0.089 2.26 Solder pad with thermal via structure. All dimensions in mm. 0.155 3.94 0.085 2.16 Figure 3. PCB Pad Layout for PLD--1.5W AFS12 N( )A WLYWWZ Figure 4. Product Marking AFT27S012NT1 RF Device Data NXP Semiconductors 5 PACKAGE DIMENSIONS AFT27S012NT1 6 RF Device Data NXP Semiconductors AFT27S012NT1 RF Device Data NXP Semiconductors 7 AFT27S012NT1 8 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION Refer to the following resources to aid your design process. Application Notes  AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 July 2017 Description  Initial release of data sheet AFT27S012NT1 RF Device Data NXP Semiconductors 9 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo, Freescale, the Freescale logo, and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2017 NXP B.V. AFT27S012NT1 Document Number: AFT27S012N Rev. 0, 07/2017 10 RF Device Data NXP Semiconductors