BAS21H

BAS21H Single high-voltage switching diode Rev. 02 — 3 November Product data sheet 1. Product profile 1.1 General description Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features I Small and flat lead SMD plastic package I Reverse voltage: VR ≤ 200 V 1.3 Applications I General-purpose switching 1.4 Quick reference data Table 1. Symbol IF VR trr [1] [2] Quick reference data Parameter forward current reverse voltage reverse recovery time [2] Conditions [1] Min - Typ - Max 200 200 50 Unit mA V ns Pulse test: tp ≤ 300 µs; δ ≤ 0.02. When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. NXP Semiconductors BAS21H Single high-voltage switching diode 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] Simplified outline Symbol 1 2 sym001 1 2 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Package Name BAS21H Description plastic surface-mounted package; 2 leads Version SOD123F Type number 4. Marking Table 4. BAS21H Marking codes Marking code B2 Type number BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 2 of 10 NXP Semiconductors BAS21H Single high-voltage switching diode 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VRRM VR IF IFRM IFSM Parameter repetitive peak reverse voltage reverse voltage forward current repetitive peak forward current non-repetitive peak forward current tp = 1 ms; δ = 0.25 square wave tp = 1 µs tp = 100 µs tp = 10 ms Ptot Tj Tamb Tstg [1] [2] [3] [2] [1] Conditions Min - Max 250 200 200 625 Unit V V mA mA [3] 9 3 1.7 375 150 +150 +150 A A A mW °C °C °C total power dissipation junction temperature ambient temperature storage temperature Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Tj = 25 °C prior to surge. Tamb ≤ 25 °C −65 −65 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) [1] [2] [3] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1][2] Min - Typ - Max 330 70 Unit K/W K/W [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. Soldering point of cathode tab. BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 3 of 10 NXP Semiconductors BAS21H Single high-voltage switching diode 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VF IR Cd trr [1] [2] Conditions IF = 100 mA IF = 200 mA VR = 200 V VR = 200 V; Tj = 150 °C VR = 0 V; f = 1 MHz [2] [1] [1] Min - Typ - Max 1 1.25 100 100 5 50 Unit V V nA µA pF ns forward voltage reverse current diode capacitance reverse recovery time Pulse test: tp ≤ 300 µs; δ ≤ 0.02. When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 4 of 10 NXP Semiconductors BAS21H Single high-voltage switching diode 600 IF (mA) (1) (2) mbg384 102 IFSM (A) mbg703 (3) 400 10 200 1 0 10−1 0 1 VF (V) 2 1 10 102 103 tp (µs) 104 (1) Tamb = 150 °C; typical values (2) Tamb = 25 °C; typical values (3) Tamb = 25 °C; maximum values Based on square wave currents. Tj = 25 °C; prior to surge Fig 1. Forward current as a function of forward voltage 102 IR (µA) 10 mbg381 Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values mbg447 1.0 Cd (pF) 0.8 1 (1) (2) 0.6 10−1 0.4 10−2 0 100 Tj (°C) 200 0.2 0 2 4 6 VR (V) 8 (1) VR = VRmax; maximum values (2) VR = VRmax; typical values f = 1 MHz; Tamb = 25 °C Fig 3. Reverse current as a function of junction temperature Fig 4. Diode capacitance as a function of reverse voltage; typical values BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 5 of 10 NXP Semiconductors BAS21H Single high-voltage switching diode 8. Test information tr D.U.T. RS = 50 Ω V = VR + IF × RS IF SAMPLING OSCILLOSCOPE Ri = 50 Ω VR mga881 tp t 10 % + IF trr t 90 % input signal output signal (1) (1) IR = 3 mA Fig 5. Reverse recovery time test circuit and waveforms 9. Package outline 1.7 1.5 1 0.55 0.35 3.6 3.4 2.7 2.5 1.2 1.0 2 0.70 0.55 Dimensions in mm 0.25 0.10 04-11-29 Fig 6. Package outline SOD123F 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAS21H [1] Package SOD123F Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -115 10000 -135 For further information and the availability of packing methods, see Section 15. BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 6 of 10 NXP Semiconductors BAS21H Single high-voltage switching diode 11. Soldering 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 7. Reflow soldering footprint SOD123F 12. Mounting 43.4 1.2 1.2 1.2 1.2 0.5 40 Dimensions in mm 006aaa670 PCB thickness = 1.6 mm Fig 8. FR4 PCB, standard footprint SOD123F BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 7 of 10 NXP Semiconductors BAS21H Single high-voltage switching diode 13. Revision history Table 9. BAS21H_2 Modifications: Revision history Release date 20061103 Data sheet status Product data sheet Change notice Supersedes BAS21H_1 Document ID • • • • • • • • • • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 1.1 “General description”: amended Table 1 “Quick reference data”: IF forward current table note added Table 5 “Limiting values”: IF forward current table note added Table 5 “Limiting values”: IFRM repetitive peak forward current condition amended Table 5 “Limiting values”: IFSM non-repetitive peak forward current condition amended Table 6: Rth(j-sp) thermal resistance from junction to solder point table note added Table 7 “Characteristics”: VF forward voltage unit amended Figure 2: figure title and figure note amended Figure 3: amended Section 12 “Mounting”: added Section 14.4 “Trademarks”: added Product data sheet - BAS21H_1 20050411 BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 8 of 10 NXP Semiconductors BAS21H Single high-voltage switching diode 14. Legal information 14.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 14.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 9 of 10 NXP Semiconductors BAS21H Single high-voltage switching diode 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information. . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 November Document identifier: BAS21H_2