BAS21W

BAS21W series High-voltage switching diodes Rev. 01 — 9 October 2009 Product data sheet 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Configuration single dual common anode dual series Package NXP BAS21W BAS21AW BAS21SW SOT323 JEDEC SC-70 Package configuration very small Type number 1.2 Features I High switching speed: trr ≤ 50 ns I Low leakage current I High reverse voltage: VR ≤ 250 V I Low capacitance: Cd ≤ 2 pF I Very small SMD plastic package I AEC-Q101 qualified 1.3 Applications I High-speed switching I General-purpose switching I Voltage clamping I Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Per diode IF IR VR trr [1] [2] Quick reference data Parameter forward current reverse current reverse voltage reverse recovery time [2] Conditions [1] Min - Typ - Max 225 100 250 50 Unit mA nA V ns VR = 200 V Single diode loaded. When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. NXP Semiconductors BAS21W series High-voltage switching diodes 2. Pinning information Table 3. Pin BAS21W 1 2 3 anode not connected cathode 1 2 3 1 3 2 006aaa764 Pinning Description Simplified outline Graphic symbol BAS21AW 1 2 3 cathode (diode 1) cathode (diode 2) common anode 1 2 1 2 006aab099 3 3 BAS21SW 1 2 3 anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) 1 2 1 2 006aaa763 3 3 3. Ordering information Table 4. Ordering information Package Name BAS21W BAS21AW BAS21SW SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 2 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 4. Marking Table 5. BAS21W BAS21AW BAS21SW [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] X4* X6* X5* Type number 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode VR IF IFRM IFSM reverse voltage forward current repetitive peak forward current non-repetitive peak forward current square wave tp = 1 µs tp = 100 µs tp = 10 ms Per device Ptot Tj Tamb Tstg [1] [2] [3] [4] [3] [1] [2] Parameter Conditions Min - Max 250 225 125 625 Unit V mA mA mA [4] 9 3 1.7 200 150 +150 +150 A A A mW °C °C °C total power dissipation junction temperature ambient temperature storage temperature Single diode loaded. Double diode loaded. Tj = 25 °C prior to surge. Tamb ≤ 25 °C −55 −65 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 3 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 6. Thermal characteristics Table 7. Symbol Per device Rth(j-a) Rth(j-sp) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] Min - Typ - Max 625 300 Unit K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Per diode VF IR Cd trr [1] Parameter forward voltage reverse current diode capacitance reverse recovery time Conditions IF = 100 mA IF = 200 mA VR = 200 V VR = 200 V; Tj = 150 °C f = 1 MHz; VR = 0 V [1] Min - Typ - Max 1.0 1.25 100 100 2 50 Unit V V nA µA pF ns When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 4 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 600 IF (mA) 400 006aab212 102 IFSM (A) 10 mbg703 200 (1) (2) (3) (4) 1 0 0 0.4 0.8 1.2 VF ( V) 1.6 10−1 1 10 102 103 tp (µs) 104 (1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C Based on square wave currents. Tj = 25 °C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values 102 IR (µA) 10 1 10−1 (3) Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values 006aab213 (1) (2) 10−2 10−3 10−4 10−5 0 (4) 50 100 150 200 250 VR ( V) (1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 3. Reverse current as a function of reverse voltage; typical values BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 5 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 1.0 Cd (pF) 0.8 mbg447 300 IF (mA) 200 006aab214 (1) 0.6 (2) 100 0.4 0.2 0 2 4 6 VR (V) 8 0 0 50 100 150 200 Tamb (°C) f = 1 MHz; Tamb = 25 °C FR4 PCB, standard footprint (1) Single diode loaded. (2) Double diode loaded. Fig 4. Diode capacitance as a function of reverse voltage; typical values Fig 5. Forward current as a function of ambient temperature; derating curve 8. Test information tr D.U.T. RS = 50 Ω V = VR + IF × RS IF SAMPLING OSCILLOSCOPE Ri = 50 Ω VR mga881 tp t 10 % + IF trr t 90 % input signal output signal (1) (1) IR = 1 mA Fig 6. Reverse recovery time test circuit and waveforms 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 6 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 9. Package outline 2.2 1.8 3 0.45 0.15 1.1 0.8 2.2 1.35 2.0 1.15 1 2 0.4 0.3 1.3 0.25 0.10 04-11-04 Dimensions in mm Fig 7. Package outline SOT323 (SC-70) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAS21W BAS21AW BAS21SW [1] For further information and the availability of packing methods, see Section 14. Package SOT323 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -115 10000 -135 BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 7 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 11. Soldering 2.65 1.85 1.325 solder lands 2 solder resist solder paste occupied area Dimensions in mm 2.35 0.6 (3×) 3 1.3 0.5 (3×) 1 0.55 (3×) sot323_fr Fig 8. Reflow soldering footprint SOT323 (SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 3.65 2.1 1.8 Dimensions in mm preferred transport direction during soldering 09 (2×) sot323_fw Fig 9. Wave soldering footprint SOT323 (SC-70) BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 8 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 12. Revision history Table 10. Revision history Release date 20091009 Data sheet status Product data sheet Change notice Supersedes Document ID BAS21W_SER_1 BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 9 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 10 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 October 2009 Document identifier: BAS21W_SER_1