BAT854SW

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAT854W series Schottky barrier (double) diodes Product data sheet 2001 Feb 27 NXP Semiconductors Product data sheet Schottky barrier (double) diodes FEATURES • Very low forward voltage • Very low reverse current • Guard ring protected • Very small SMD plastic package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes • Low power consumption applications (e.g. hand-held applications). DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT323 very small SMD plastic package. Single diodes and double diodes with different pinning are available. MARKING PINNING PIN BAT854W 1 2 3 BAT854AW 1 2 3 BAT854CW 1 2 3 BAT854SW 1 2 3 a1 k2 k1, a2 a1 a2 k1, k2 Fig.3 k1 k2 a1,a2 a n.c. k Fig.2 SYMBOL BAT854W series 3 1 2 n.c. MLC357 BAT854W single diode configuration (symbol). 3 1 2 MLC360 BAT854AW diode configuration (symbol). 3 1 2 MLC359 TYPE NUMBER BAT854W BAT854AW BAT854CW BAT854SW MARKING CODE 81 82 83 84 handbook, 2 columns 3 Fig.4 BAT854CW diode configuration (symbol). 1 Top view 2 MBC870 3 1 2 MLC358 Fig.1 Simplified outline SOT323 and pin configuration. Fig.5 BAT854SW diode configuration (symbol). 2001 Feb 27 2 NXP Semiconductors Product data sheet Schottky barrier (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 t = 8.3 ms half sinewave; JEDEC method − − − − −65 − −65 PARAMETER CONDITIONS BAT854W series MIN. MAX. UNIT 40 200 300 1 +150 150 +150 V mA mA A °C °C °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL Per diode VF continuous forward voltage see Fig.6 IF = 0.1 mA I F = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323 standard mounting conditions. PARAMETER CONDITIONS VALUE 625 UNIT K/W continuous reverse current diode capacitance VR = 25 V; note 1; see Fig.7 VR = 1 V; f = 1 MHz; see Fig.8 200 260 340 − − − − − − − 420 550 0.5 20 mV mV mV mV mV μA pF PARAMETER CONDITIONS TYP. MAX. UNIT thermal resistance from junction to ambient note 1 2001 Feb 27 3 NXP Semiconductors Product data sheet Schottky barrier (double) diodes GRAPHICAL DATA 103 handbook, halfpage IF (mA) 102 MLD546 BAT854W series 103 handbook, halfpage IR (μA) 102 (2) (1) MLD547 10 10 (1) (2) (3) 1 1 (3) 10−1 0 0.4 0.8 VF (V) 1.2 10−1 0 10 20 30 VR (V) 40 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.6 Forward current as a function of forward voltage; typical values. Fig.7 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 20 Cd 16 MLD548 (pF) 12 8 4 0 0 10 20 30 VR (V) 40 f = 1 MHz; Tamb = 25 °C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 2001 Feb 27 4 NXP Semiconductors Product data sheet Schottky barrier (double) diodes PACKAGE OUTLINE BAT854W series Plastic surface mounted package; 3 leads SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2001 Feb 27 5 NXP Semiconductors Product data sheet Schottky barrier (double) diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION BAT854W series This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2001 Feb 27 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp7 Date of release: 2001 Feb 27 Document order number: 9397 750 07935