BAV23C

BAV23 series Dual high-voltage switching diodes Rev. 07 — 19 March 2010 Product data sheet 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Package NXP BAV23A BAV23C BAV23S BAV23 SOT23 SOT23 SOT23 SOT143B JEDEC TO-236AB TO-236AB TO-236AB dual common anode dual common cathode dual series dual isolated Configuration Type number 1.2 Features and benefits  High switching speed: trr  50 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  250 V  Low capacitance: Cd  2 pF  Small SMD plastic package 1.3 Applications  High-speed switching at high voltage  High-voltage general-purpose switching 1.4 Quick reference data Table 2. Symbol Per diode IR VR trr [1] Quick reference data Parameter reverse current reverse voltage reverse recovery time [1] Conditions VR = 200 V Min - Typ - Max 100 200 50 Unit nA V ns When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. NXP Semiconductors BAV23 series Dual high-voltage switching diodes 2. Pinning information Table 3. Pin BAV23A 1 2 3 cathode (diode 1) cathode (diode 2) common anode 1 2 3 3 Pinning Description Simplified outline Graphic symbol 1 2 006aab099 BAV23C 1 2 3 anode (diode 1) anode (diode 2) common cathode 1 2 3 3 1 2 006aab034 BAV23S 1 2 3 anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) 3 3 1 2 1 2 006aaa763 BAV23 1 2 3 4 cathode (diode 1) cathode (diode 2) anode (diode 2) anode (diode 1) 1 2 1 2 006aab100 4 3 4 3 BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 2 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 3. Ordering information Table 4. Ordering information Package Name BAV23A BAV23C BAV23S BAV23 plastic surface-mounted package; 4 leads SOT143B Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 5. BAV23A BAV23C BAV23S BAV23 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] *V0 *V9 *V5 *L3 Type number 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage reverse voltage forward current repetitive peak forward current non-repetitive peak forward current square wave tp = 1 s tp = 100 s tp = 10 ms [3] [1] [2] Parameter Conditions Min - Max 250 200 225 125 625 Unit V V mA mA mA - 9 3 1.7 A A A BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 3 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Ptot Tj Tamb Tstg [1] [2] [3] [4] Parameter total power dissipation junction temperature ambient temperature storage temperature Conditions Tamb  25 C [4] Min 65 65 Max 250 150 +150 +150 Unit mW C C C Single diode loaded. Double diode loaded. Tj = 25 C prior to surge. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7. Symbol Per device Rth(j-a) Rth(j-sp) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] Min - Typ - Max 500 360 Unit K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Per diode VF IR Cd trr [1] Parameter forward voltage reverse current diode capacitance reverse recovery time Conditions IF = 100 mA IF = 200 mA VR = 200 V VR = 200 V; Tj = 150 C f = 1 MHz; VR = 0 V [1] Min - Typ - Max 1.0 1.25 100 100 2 50 Unit V V nA A pF ns When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 4 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 600 IF (mA) 400 006aab212 102 IFSM (A) 10 mbg703 200 (1) (2) (3) (4) 1 0 0 0.4 0.8 1.2 VF ( V) 1.6 10−1 1 10 102 103 tp (μs) 104 (1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = 40 C Based on square wave currents. Tj = 25 C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values 102 IR (μA) 10 1 10−1 (3) Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values 006aab213 (1) (2) 10−2 10−3 10−4 10−5 0 (4) 50 100 150 200 250 VR ( V) (1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = 40 C Fig 3. Reverse current as a function of reverse voltage; typical values BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 5 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 1.0 Cd (pF) 0.8 mbg447 300 IF (mA) 200 006aab214 (1) 0.6 (2) 100 0.4 0.2 0 2 4 6 VR (V) 8 0 0 50 100 150 200 Tamb (°C) f = 1 MHz; Tamb = 25 C FR4 PCB, standard footprint (1) Single diode loaded. (2) Double diode loaded. Fig 4. Diode capacitance as a function of reverse voltage; typical values Fig 5. Forward current as a function of ambient temperature; derating curves 8. Test information tr D.U.T. RS = 50 Ω V = VR + IF × RS IF SAMPLING OSCILLOSCOPE Ri = 50 Ω VR mga881 tp t 10 % + IF trr t 90 % input signal output signal (1) (1) IR = 1 mA Fig 6. Reverse recovery time test circuit and waveforms BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 6 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 9. Package outline 3.0 2.8 1.9 4 0.45 0.15 2.5 1.4 2.1 1.2 2.5 2.1 1.4 1.2 3 0.45 0.15 3.0 2.8 3 1.1 0.9 1.1 0.9 1 2 1 0.48 0.38 0.15 0.09 04-11-04 0.88 0.78 1.7 Dimensions in mm 2 0.48 0.38 0.15 0.09 1.9 Dimensions in mm 04-11-16 Fig 7. Package outline SOT23 (TO-236AB) Fig 8. Package outline SOT143B 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAV23A BAV23C BAV23S BAV23 [1] Package SOT23 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -215 10000 -235 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235 For further information and the availability of packing methods, see Section 14. BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 7 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.6 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr 0.7 (3×) Fig 9. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 10. Wave soldering footprint SOT23 (TO-236AB) BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 8 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 3.25 0.6 (3×) 0.5 (3×) 1.9 solder lands solder resist 2 3 solder paste occupied area 0.7 0.6 Dimensions in mm 0.7 0.6 (3×) (3×) 0.75 0.9 1 0.95 sot143b_fr Fig 11. Reflow soldering footprint SOT143B 4.45 2.2 1.2 (3×) 1.425 (3×) solder lands solder resist 4.6 2.575 occupied area Dimensions in mm 1.425 preferred transport direction during soldering 1 1.2 sot143b_fw Fig 12. Wave soldering footprint SOT143B BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 9 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 12. Revision history Table 10. Revision history Release date 20100319 Data sheet status Product data sheet Change notice Supersedes BAV23_SER_6 Document ID BAV23_SER_7 Modifications: • • • • • • Type numbers BAV23A/DG, BAV23C/DG, BAV23S/DG and BAV23/DG deleted Type numbers BAV23A and BAV23C added Table 5 “Marking codes”: updated Figure 6: adaptation of test condition to specified characteristics in Table 8 Figure 9, 10, 11 and 12: updated Section 13 “Legal information”: updated Product data sheet Product specification Product specification BAV23S_5 BAV23_2 BAV23S_4 BAV23_1 BAV23_SER_6 BAV23S_5 BAV23_2 20080303 20011012 19960917 BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 10 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BAV23_SER_7 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 11 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 12 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 March 2010 Document identifier: BAV23_SER_7