BAW56W

BAV756S; BAW56 series High-speed switching diodes Rev. 05 — 26 November 2007 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Package NXP BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W SOT363 SOT23 SOT883 SOT363 SOT416 SOT323 JEITA SC-88 SC-101 SC-88 SC-75 SC-70 JEDEC Package configuration very small Configuration quadruple common anode/common cathode dual common anode dual common anode quadruple common anode/common anode dual common anode dual common anode Type number TO-236AB small leadless ultra small very small ultra small very small 1.2 Features I High switching speed: trr ≤ 4 ns I Low leakage current I Small SMD plastic packages I Low capacitance: Cd ≤ 2 pF I Reverse voltage: VR ≤ 90 V 1.3 Applications I High-speed switching I General-purpose switching 1.4 Quick reference data Table 2. Symbol Per diode IR VR trr [1] Quick reference data Parameter reverse current reverse voltage reverse recovery time [1] Conditions VR = 80 V Min - Typ - Max 0.5 90 4 Unit µA V ns When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 2. Pinning information Table 3. Pin BAV756S 1 2 3 4 5 6 anode (diode 1) cathode (diode 2) common anode (diode 2 and diode 3) cathode (diode 3) anode (diode 4) common cathode (diode 1 and diode 4) cathode (diode 1) cathode (diode 2) common anode 1 2 006aaa144 Pinning Description Simplified outline Symbol 6 5 4 6 5 4 1 2 3 1 2 3 006aab103 BAW56; BAW56T; BAW56W 1 2 3 3 3 1 2 006aab099 BAW56M 1 2 3 cathode (diode 1) cathode (diode 2) common anode 1 3 2 Transparent top view 1 2 006aab099 3 BAW56S 1 2 3 4 5 6 cathode (diode 1) cathode (diode 2) common anode (diode 3 and diode 4) cathode (diode 3) cathode (diode 4) common anode (diode 1 and diode 2) 1 2 3 1 2 3 006aab102 6 5 4 6 5 4 BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 2 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 3. Ordering information Table 4. Ordering information Package Name BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W SC-88 SC-101 SC-88 SC-75 SC-70 Description plastic surface-mounted package; 6 leads plastic surface-mounted package; 3 leads leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm plastic surface-mounted package; 6 leads plastic surface-mounted package; 3 leads plastic surface-mounted package; 3 leads Version SOT363 SOT23 SOT883 SOT363 SOT416 SOT323 Type number 4. Marking Table 5. BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] A7* A1* S5 A1* A1 A1* Type number 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode VRRM VR IF repetitive peak reverse voltage reverse voltage forward current BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W BAV756S_BAW56_SER_5 Parameter Conditions Min - Max 90 90 250 215 150 250 150 150 Unit V V mA mA mA mA mA mA Ts = 60 °C Tamb ≤ 25 °C Tamb ≤ 25 °C Ts = 60 °C Ts = 90 °C Tamb ≤ 25 °C - © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 3 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IFRM IFSM Parameter repetitive peak forward current non-repetitive peak forward current square wave tp = 1 µs tp = 1 ms tp = 1 s Ptot total power dissipation BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W Per device IF forward current BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W Tj Tamb Tstg [1] [2] [3] [4] [2] [1] Conditions Min - Max 500 Unit mA [3] 4 1 0.5 350 250 250 350 170 200 A A A mW mW mW mW mW mW Ts = 60 °C Tamb ≤ 25 °C Tamb ≤ 25 °C Ts = 60 °C Ts = 90 °C Tamb ≤ 25 °C [4] - Ts = 60 °C Tamb ≤ 25 °C Tamb ≤ 25 °C Ts = 60 °C Ts = 90 °C Tamb ≤ 25 °C −65 −65 100 125 75 100 75 130 150 +150 +150 mA mA mA mA mA mA °C °C °C junction temperature ambient temperature storage temperature Tj = 25 °C prior to surge. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. Single diode loaded. 6. Thermal characteristics Table 7. Symbol Per diode Rth(j-a) thermal resistance from junction to ambient BAW56 BAW56M BAW56W [2] Thermal characteristics Parameter Conditions in free air [1] Min Typ Max Unit - - 500 500 625 K/W K/W K/W BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 4 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes Thermal characteristics …continued Parameter thermal resistance from junction to solder point BAV756S BAW56 BAW56S BAW56T BAW56W 255 360 255 350 300 K/W K/W K/W K/W K/W Conditions Min Typ Max Unit Table 7. Symbol Rth(j-sp) [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Per diode VF forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current VR = 25 V VR = 80 V VR = 25 V; Tj = 150 °C VR = 80 V; Tj = 150 °C Cd trr VFR [1] [2] [3] [1] Parameter Conditions Min Typ Max Unit [2] [3] - 715 855 1 1.25 30 0.5 30 150 2 4 1.75 mV mV V V nA µA µA µA pF ns V diode capacitance reverse recovery time forward recovery voltage Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VR = 0 V; f = 1 MHz - When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. When switched from IF = 10 mA; tr = 20 ns. BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 5 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 103 IF (mA) 102 006aab109 102 IFSM (A) 10 mbg704 10 1 (1) (2) (3) (4) 1 10−1 0.2 10−1 0.6 1.0 VF (V) 1.4 1 10 102 103 tp (µs) 104 (1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C Based on square wave currents. Tj = 25 °C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values 102 IR (µA) 10 1 10−1 10−2 10−3 10−4 10−5 0 20 40 60 80 VR (V) 100 (3) Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values mbh191 006aab110 (1) 2.5 Cd (pF) 2.0 (2) 1.5 1.0 0.5 (4) 0 0 5 10 15 20 VR (V) 25 (1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C f = 1 MHz; Tamb = 25 °C Fig 3. Reverse current as a function of reverse voltage; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 6 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 8. Test information tr D.U.T. RS = 50 Ω V = VR + IF × RS IF SAMPLING OSCILLOSCOPE Ri = 50 Ω VR mga881 tp t 10 % + IF trr t 90 % input signal output signal (1) (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 kΩ 450 Ω I 90 % V RS = 50 Ω D.U.T. OSCILLOSCOPE Ri = 50 Ω 10 % t tr tp input signal VFR t output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 7 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 9. Package outline 0.62 0.55 0.55 0.47 0.30 0.22 3 3.0 2.8 3 1.1 0.9 0.50 0.46 0.45 0.15 2.5 1.4 2.1 1.2 0.65 0.30 0.22 0.48 0.38 0.15 0.09 04-11-04 0.20 0.12 0.35 Dimensions in mm 1.02 0.95 1 2 2 1 1.9 Dimensions in mm 03-04-03 Fig 7. Package outline BAW56 (SOT23/TO-236AB) 2.2 1.8 6 5 4 0.45 0.15 1.1 0.8 Fig 8. Package outline BAW56M (SOT883/SC-101) 1.8 1.4 3 0.45 0.15 0.95 0.60 2.2 1.35 2.0 1.15 pin 1 index 1.75 0.9 1.45 0.7 1 0.65 1.3 Dimensions in mm 2 3 0.3 0.2 0.25 0.10 1 2 0.30 0.15 1 0.25 0.10 04-11-04 06-03-16 Dimensions in mm Fig 9. Package outline BAV756S and BAW56S (SOT363/SC-88) Fig 10. Package outline BAW56T (SOT416/SC-75) 2.2 1.8 3 0.45 0.15 1.1 0.8 2.2 1.35 2.0 1.15 1 2 0.4 0.3 1.3 0.25 0.10 04-11-04 Dimensions in mm Fig 11. Package outline BAW56W (SOT323/SC-70) BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 8 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAV756S BAW56 BAW56M BAW56S BAW56T BAW56W [1] [2] [3] Package SOT363 SOT23 SOT883 SOT363 SOT416 SOT323 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel [2] [3] [2] [3] Packing quantity 3000 -115 -125 -215 -115 -125 -115 -115 10000 -135 -165 -235 -315 -135 -165 -135 -135 For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping 11. Soldering 2.90 2.50 0.85 3.00 0.85 1.30 2 1 solder lands 2.70 3 solder resist solder paste occupied area 0.60 (3x) Dimensions in mm 0.50 (3x) 0.60 (3x) 1.00 3.30 sot023 Fig 12. Reflow soldering footprint BAW56 (SOT23/TO-236AB) BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 9 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 3.40 1.20 (2x) solder lands solder resist occupied area 2 1 3 4.60 4.00 1.20 Dimensions in mm 2.80 4.50 preferred transport direction during soldering sot023 Fig 13. Wave soldering footprint BAW56 (SOT23/TO-236AB) 1.30 R = 0.05 (12×) 0.30 R = 0.05 (12×) 0.35 (2×) 0.90 0.20 0.25 (2×) 0.60 0.70 0.80 0.30 (2×) 0.40 (2×) 0.50 (2×) 0.30 0.40 0.50 solder lands solder paste solder resist occupied area Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint BAW56M (SOT883/SC-101) BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 10 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 2.65 0.60 (2×) 2.35 solder lands solder paste solder resist occupied area Dimensions in mm 0.50 (4×) 0.50 (4×) 0.40 0.90 2.10 (2×) 1.20 2.40 sot363 Fig 15. Reflow soldering footprint BAV756S and BAW56S (SOT363/SC-88) 5.25 4.50 0.30 1.00 4.00 solder lands solder resist occupied area 1.15 3.75 transport direction during soldering sot363 Dimensions in mm Fig 16. Wave soldering footprint BAV756S and BAW56S (SOT363/SC-88) BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 11 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 2.2 0.6 0.7 1.1 2 2.0 0.85 3 1 0.5 (3x) 1.5 0.6 (3x) 1.9 Dimensions in mm solder lands solder resist msa438 solder paste occupied area Fig 17. Reflow soldering footprint BAW56T (SOT416/SC-75) 2.65 0.75 1.325 1.30 solder lands 2 solder paste 0.60 2.35 0.85 (3×) 3 0.50 (3×) 1.90 1 solder resist occupied area Dimensions in mm 0.55 (3×) 2.40 msa429 Fig 18. Reflow soldering footprint BAW56W (SOT323/SC-70) 4.60 4.00 1.15 2 3.65 2.10 3 2.70 solder lands 1 0.90 (2×) solder resist occupied area Dimensions in mm preferred transport direction during soldering msa419 Fig 19. Wave soldering footprint BAW56W (SOT323/SC-70) BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 12 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 12. Revision history Table 10. Revision history Release date Data sheet status Product data sheet Change notice Supersedes BAV756S_2 BAW56_4 BAW56S_2 BAW56T_2 BAW56W_4 Document ID BAV756S_BAW56_SER_5 20071126 Modifications: • • • • • • • • • • • • • • • • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BAW56M added Section 1.1 “General description”: amended Table 1 “Product overview”: added Table 2 “Quick reference data”: added Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W change of VRRM maximum value from 85 V to 90 V Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W change of VR maximum value from 75 V to 90 V Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W change of IR condition VR from 75 V to 80 V for Tj = 25 °C Table 8 “Characteristics”: for BAV756S change of IR maximum value from 2.5 µA to 0.5 µA for Tj = 25 °C Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of IR maximum value from 1 µA to 0.5 µA for Tj = 25 °C Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W change of IR condition VR from 75 V to 80 V for Tj = 150 °C Table 8 “Characteristics”: for BAV756S change of IR maximum value from 60 µA to 30 µA for IR condition VR = 25 V; Tj = 150 °C Table 8 “Characteristics”: for BAV756S change of IR maximum value from 100 µA to 150 µA for Tj = 150 °C Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of IR maximum value from 50 µA to 150 µA for Tj = 150 °C Section 8 “Test information”: added Section 10 “Packing information”: added Section 11 “Soldering”: added Section 13 “Legal information”: updated Product specification Product specification Product specification Product specification Product specification BAV756S_1 BAW56_3 BAW56S_1 BAW56W_3 BAV756S_2 BAW56_4 BAW56S_2 BAW56T_2 BAW56W_4 19971021 20030325 19971021 19971219 19990511 BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 13 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 14 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 November 2007 Document identifier: BAV756S_BAW56_SER_5