BC817DPN

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC817DPN NPN/PNP general purpose transistor Product data sheet Supersedes data of 2002 Aug 09 2002 Nov 22 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor FEATURES • High current (500 mA) • 600 mW total power dissipation • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS • General purpose switching and amplification • Complementary driver • Half and full bridge driver. DESCRIPTION NPN/PNP transistor pair in a SOT457 (SC-74) plastic package. MARKING TR1 6 handbook, halfpage 5 4 6 BC817DPN QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. 45 500 1 UNIT V mA A 5 4 TR2 TYPE NUMBER BC817DPN MARKING CODE N4 1 Top view 2 3 MAM445 1 2 3 Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 Tamb ≤ 25 °C; note 1 − MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2002 Nov 22 2 total power dissipation 600 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 45 5 500 1 200 370 +150 150 +150 V V V mA A mA mW °C °C °C NXP Semiconductors Product data sheet NPN/PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to note 1 ambient CONDITIONS BC817DPN VALUE 208 UNIT K/W 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − − − 160 40 − − TYP. − − − − − − − MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity ICBO IEBO hFE VCEsat VBE collector-base cut-off current emitter-base cut-off current DC current gain VCB = 20 V; IE = 0 VCB = 20 V; IE = 0; Tj = 150 °C VEB = 5 V; IC = 0 VCE = 1 V; IC = 100 mA; note 1 VCE = 1 V; IC = 500 mA; note 1 collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 base-emitter voltage VCE = 1 V; IC = 500 mA; notes 1 and 2 100 5 100 400 − 700 1.2 mV V nA μA nA NPN transistor Cc fT collector capacitance transition frequency VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz VCB = −10 V; IE = Ie = 0; f = 1 MHz VCE = −5 V; IC = −10 mA; f = 100 MHz − 100 5 − − − pF MHz PNP transistor Cc fT Notes 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2. VBE decreases by approximately −2 mV/K with increasing temperature. collector capacitance transition frequency − 80 9 − − − pF MHz 2002 Nov 22 3 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN handbook, halfpage 500 MBL747 handbook, halfpage hFE 400 (1) 1000 IC MBL748 (1) (2) (3) (4) (5) (mA) 800 (6) (7) 300 (2) 600 (8) (9) 200 (3) 400 (10) 100 200 0 10−1 1 10 102 IC (mA) 103 0 0 2 4 6 8 10 VCE (V) TR1 (NPN) TR1 (NPN) VCE = 1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) IB = 15 mA. (2) IB = 13.5 mA. (3) IB = 12 mA. (4) IB = 10.5 mA. (5) IB = 9 mA. (6) IB = 7.5 mA. (7) IB = 6 mA. (8) IB = 4.5 mA. (9) IB = 3 mA. (10) IB = 1.5 mA. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Collector current as a function of collector-emitter voltage; typical values. 2002 Nov 22 4 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN 103 handbook, halfpage MBL749 handbook, halfpage 1200 VBE (mV) 1000 MBL750 VCEsat (mV) (1) 800 102 (2) 600 (1) (2) (3) (3) 400 10 10−1 1 10 102 IC (mA) 103 200 10−1 1 10 102 IC (mA) 103 TR1 (NPN) IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN) VCE = 1 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter voltage as a function of collector current; typical values. 2002 Nov 22 5 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN handbook, halfpage 600 MHC324 handbook, halfpage hFE 500 (1) −1000 IC (mA) MHC325 (1) (2) (3) (4) (5) −800 400 −600 (6) (7) (8) 300 (2) −400 200 (3) (9) 100 −200 (10) 0 −10−1 −1 −10 −102 −103 IC (mA) 0 0 −2 −4 −6 −8 −10 VCE (V) TR2 (PNP) TR2 (PNP) VCE = −1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) IB = −7 mA. (2) IB = −6.3 mA. (3) IB = −5.6 mA. (4) IB = −4.9 mA. (5) IB = −4.2 mA. (6) IB = −3.5 mA. (7) IB = −2.8 mA. (8) IB = −2.1 mA. (9) IB = −1.4 mA. (10) IB = −0.7 mA. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Collector current as a function of collector-emitter voltage; typical values. 2002 Nov 22 6 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN −103 handbook, halfpage VCEsat (mV) −102 (1) (2) MHC326 handbook, halfpage −1200 VBE (mV) −1000 MHC327 −800 (1) −10 (3) −600 (2) −400 (3) −1 −10−1 −1 −10 −102 −103 IC (mA) −200 −10−1 −1 −10 −102 −103 IC (mA) TR2 (PNP) IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP) VCE = −1 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter voltage as a function of collector current; typical values. 2002 Nov 22 7 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor PACKAGE OUTLINE BC817DPN Plastic surface mounted package; 6 leads SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp wM B detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 2002 Nov 22 8 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION BC817DPN This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2002 Nov 22 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp10 Date of release: 2002 Nov 22 Document order number: 9397 750 10583