BC858W

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 12 2002 Feb 04 NXP Semiconductors Product data sheet PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W. MARKING TYPE NUMBER BC856W BC856AW BC856BW BC857W BC857AW BC857BW BC857CW BC858W Note 1. * = -: made in Hong Kong. * = t: made in Malaysia. MARKING CODE(1) handbook, halfpage BC856W; BC857W; BC858W PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 Top view 2 MAM048 3D* 3A* 3B* 3H* 3E* 3F* 3G* 3M* Fig.1 Simplified outline (SOT323; SC70) and symbol. 2002 Feb 04 2 NXP Semiconductors Product data sheet PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO BC856W BC857W BC858W VCEO collector-emitter voltage BC856W BC857W BC858W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323 standard mounting conditions. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323 standard mounting conditions. PARAMETER thermal resistance from junction to ambient emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open collector open base PARAMETER collector-base voltage BC856W; BC857W; BC858W CONDITIONS open emitter − − − − − − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. −80 −50 −30 −65 −45 −30 −5 −100 −200 −200 200 +150 150 +150 V V V V V V V UNIT mA mA mA mW °C °C °C −65 − −65 CONDITIONS in free air; note 1 VALUE 625 UNIT K/W 2002 Feb 04 3 NXP Semiconductors Product data sheet PNP general purpose transistors CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current BC856W; BC857W; BC858W CONDITIONS VCB = −30 V; IE = 0 VCB = −30 V; IE = 0; Tj = 150 °C MIN. − − − 125 125 125 220 420 TYP. −1 − − − − − − − −75 −250 −700 −850 −650 − − − − − MAX. −15 −4 −100 475 800 250 475 800 −300 −600 − − −750 −820 3 12 − 10 UNIT nA μA nA IEBO hFE emitter-base cut-off current DC current gain BC856W BC857W; BC858W BC856AW; BC857AW BC856BW; BC857BW BC857CW VEB = −5 V; IC = 0 IC = −2 mA; VCE = −5 V VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − IC = −100 mA; IB = −5 mA; − note 1 mV mV mV mV mV mV pF pF MHz dB VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − IC = −100 mA; IB = −5 mA; − note 1 VBE Cc Ce fT F base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V VCB = −10 V; IE = Ie = 0; f = 1 MHz VEB = −0.5 V; IC = Ic = 0; f = 1 MHz VCE = −5 V; IC = −10 mA; f = 100 MHz IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz −600 − − − 100 − Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2002 Feb 04 4 NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W handbook, halfpage 500 MGT711 handbook, halfpage hFE 400 (1) − 1200 VBE (mV) − 1000 − 800 MGT712 (1) 300 (2) − 600 200 (2) − 400 100 (3) (3) − 200 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857AW; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857AW; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. − 104 handbook, halfpage VCEsat (mV) − 103 MGT713 handbook, halfpage − 1200 VBEsat (mV) − 1000 − 800 − 600 MGT714 (1) (2) (3) − 102 (1) − 400 − 200 (3) (2) − 10 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857AW; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857AW; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 5 NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W handbook, halfpage 1000 MGT715 handbook, halfpage hFE 800 − 1200 VBE (mV) − 1000 − 800 MGT716 (1) 600 (1) (2) − 600 − 400 − 200 (3) 400 (2) 200 (3) 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857BW; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857BW; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. − 104 handbook, halfpage VCEsat (mV) − 103 MGT717 handbook, halfpage − 1200 VBEsat (mV) − 1000 − 800 MGT718 (1) (2) − 600 (3) − 102 (1) − 400 − 200 (3) (2) − 10 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857BW; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857BW; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 6 NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W handbook, halfpage 1000 MGT719 handbook, halfpage (1) hFE 800 − 1200 VBE (mV) − 1000 − 800 MGT720 (1) 600 (2) (2) − 600 − 400 400 (3) (3) 200 − 200 0 − 10−2 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857CW; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857CW; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.10 DC current gain as a function of collector current; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. − 104 handbook, halfpage VCEsat (mV) − 103 MGT721 handbook, halfpage − 1200 VBEsat (mV) − 1000 − 800 MGT722 (1) (2) − 600 (3) − 102 (1) − 400 − 200 (3) (2) − 10 − 10−1 −1 − 10 − 102 − 103 I C (mA) 0 − 10−1 −1 − 10 − 102 − 103 I C (mA) BC857CW; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857CW; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 7 NXP Semiconductors Product data sheet PNP general purpose transistors PACKAGE OUTLINE BC856W; BC857W; BC858W Plastic surface mounted package; 3 leads SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2002 Feb 04 8 NXP Semiconductors Product data sheet PNP general purpose transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production BC856W; BC857W; BC858W DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 Feb 04 9 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp10 Date of release: 2002 Feb 04 Document order number: 9397 750 09168