BFG92A_98

DATA SHEET book, halfpage M3D071 BFG92A/X NPN 5 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1998 Sep 23 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range. DESCRIPTION Silicon NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. PINNING PIN 1 2 3 4 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain Ts ≤ 60 °C IC = ic = 0; VCB = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz F noise figure Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz CONDITIONS − − − − − 3.5 − − − MIN. − − − − 0.35 5 16 11 2 TYP. DESCRIPTION collector emitter base emitter Marking code: V14. handbook, 2 columns 4 BFG92A/X 3 1 Top view 2 MSB014 Fig.1 SOT143B. MAX. 20 15 25 400 − − − − − UNIT V V mA mW pF GHz dB dB dB 1998 Sep 23 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB = 10 V IC = 15 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 10 V; f = 1 MHz IC = ic = 0; VCB = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz F noise figure Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz Note MIN. − 40 − − − 3.5 − − − − TYP. − 90 0.6 0.9 0.35 5 16 11 2 3 PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 290 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction temperature Ts ≤ 60 °C; note 1 open base open collector CONDITIONS open emitter − − − − − −65 − MIN. BFG92A/X MAX. 20 15 2 25 400 150 175 V V V UNIT mA mW °C °C UNIT K/W MAX. 50 − − − − − − − − − UNIT nA pF pF pF GHz dB dB dB dB S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 – S 11 2 ) ( 1 – S 22 2 ) 1998 Sep 23 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X MBB963 - 1 handbook, halfpage 800 handbook, halfpage 120 MCD074 P tot (mW) 600 h FE 80 400 40 200 0 0 50 100 150 Ts ( o C) 200 0 0 10 20 I C (mA) 30 VCE = 10 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current; typical values. 0.6 handbook, halfpage C re (pF) 0.4 MCD075 MBB275 handbook, halfpage 6 fT (GHz) 4 0.2 2 0 0 6 12 18 VCB (V) 24 0 0 10 20 I C (mA) 30 IC = ic = 0; f = 1 MHz. VCE = 10 V; Tamb = 25 °C; f = 500 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values. 1998 Sep 23 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X handbook, halfpage 30 MCD077 handbook, halfpage 30 MCD078 gain (dB) 20 MSG gain (dB) MSG 20 G UM G UM 10 10 0 0 5 10 15 20 25 I C (mA) 0 0 5 10 15 25 20 I C (mA) VCE = 10 V; f = 500 MHz. VCE = 10 V; f = 1 GHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 50 MCD079 gain (dB) handbook, halfpage 50 MCD080 gain (dB) 40 G UM 40 G UM MSG 30 MSG 30 20 G max 10 20 G max 10 0 10 10 2 10 3 f (MHz) 10 4 0 10 10 2 10 3 f (MHz) 10 4 VCE = 10 V; IC = 5 mA. VCE = 10 V; IC = 15 mA. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. 1998 Sep 23 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X handbook, halfpage 4 MCD081 F (dB) 3 f = 2 GHz handbook, halfpage 4 MCD082 F (dB) 3 I C = 15 mA 10 mA 5 mA 1 GHz 500 MHz 2 2 1 1 0 1 10 I C (mA) 10 2 0 10 2 10 3 f (MHz) 10 4 VCE = 10 V. VCE = 10 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. stability circle handbook, full pagewidth 1 2 0.5 un re sta gio bl ne 0.2 OPT + j –j 0 MSG 23.9 dB F min = 1.6 dB 0.2 0.5 1 2 2 dB 0.2 3 dB 4 dB 0.5 1 2 5 10 5 10 Zo = 50 Ω. Maximum stable gain = 23.9 dB. Fig.12 Common emitter noise figure circles; typical values. 1998 Sep 23 6 * ∞ 10 5 MCD083 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X 1 handbook, full pagewidth 0.5 stability circle 2 unsta ble re gion 0.2 OPT F min = 2.1 dB 0 MSG 0.2 19.9 dB 0.5 1 2 2.5 dB 0.2 3 dB 4 dB 5 10 5 10 +j * ∞ 10 5 –j 0.5 1 Zo = 50 Ω. Maximum stable gain = 19.9 dB. 2 MCD084 Fig.13 Common emitter noise figure circles; typical values. 1 handbook, full pagewidth 0.5 5 dB 4 dB 0.2 3.5 dB OPT +j 0 –j 0.2 Gmax 12.5 dB 0.2 12 dB 10 dB F min = 3 dB 0.5 1 2 2 5 10 * 5 10 ∞ 10 5 * 0.5 1 Zo = 50 Ω. 2 MCD085 Fig.14 Common emitter noise figure circles; typical values. 1998 Sep 23 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X 1 handbook, full pagewidth 0.5 2 0.2 3 GHz 5 10 + j –j 0 0.2 0.5 1 2 5 10 ∞ 10 5 40 MHz 0.2 0.5 1 VCE = 10 V; IC = 15 mA. 2 MCD086 Fig.15 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 180 o 40 MHz 50 40 30 20 10 3 GHz 0o _ 135 o _ 45 o VCE = 10 V; IC = 15 mA. _ 90 o MCD072 Fig.16 Common emitter forward transmission coefficient (S21); typical values. 1998 Sep 23 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X 90 o handbook, full pagewidth 135 o 3 GHz 45 o 180 o 40 MHz 0.04 0.08 0.12 0.16 0.20 0o _ 135 o _ 45 o VCE = 10 V; IC = 15 mA. _ 90 o MCD071 Fig.17 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 0.2 0.5 1 2 5 10 ∞ 10 5 40 MHz 0.2 3 GHz 0.5 1 VCE = 10 V; IC = 15 mA. 2 MCD073 Fig.18 Common emitter output reflection coefficient (S22); typical values. 1998 Sep 23 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor SPICE parameters for BFR90A/X die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 (note 1) 20 (note 1) 21 (note 1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35 (note 1) PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VALUE 411.8 102.6 997.2 62.67 3.200 4.010 1.577 18.10 996.2 3.369 1.281 279.9 1.075 10.00 1.000 10.00 1.164 2.320 0.000 1.110 3.000 890.5 600.0 258.5 15.49 39.14 2.152 213.7 0.000 546.5 380.8 202.9 150.0 5.618 0.000 − m V A fA − − m V A aA − Ω µA Ω Ω Ω − eV − fF mV m ps − V mA deg fF mV m m ns F List of components (see Fig.19) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 84 17 191 0.12 0.21 0.06 0.95 0.40 VALUE QLB = 50; QLE = 50. QLB,E (f) = QLB,E √ (f/fc). fc = scaling frequency = 100 MHz. E L3 C be L1 B LB B' E' LE C' handbook, halfpage BFG92A/X SEQUENCE No. UNIT aA 36 (note 1) 37 (note 1) 38 Note PARAMETER VJS MJS FC VALUE 750.0 0.000 850.0 − UNIT mV m 1. These parameters have not been extracted, the default values are shown. C cb L2 C Cce MBC964 Fig.19 Package equivalent circuit SOT143B. UNIT fF fF fF nH nH nH nH nH 1998 Sep 23 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINES Plastic surface mounted package; 4 leads BFG92A/X SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1998 Sep 23 11 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFG92A/X This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Sep 23 12 Philips Semiconductors Product specification NPN 5 GHz wideband transistor NOTES BFG92A/X 1998 Sep 23 13 Philips Semiconductors Product specification NPN 5 GHz wideband transistor NOTES BFG92A/X 1998 Sep 23 14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor NOTES BFG92A/X 1998 Sep 23 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/04/pp16 Date of release: 1998 Sep 23 Document order number: 9397 750 04344