BFG93A

BFG93A; BFG93A/X NPN 6 GHz wideband transistors Rev. 05 — 26 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range. DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. PINNING PIN BFG93A 1 2 3 4 collector base emitter emitter Top view MSB014 DESCRIPTION handbook, 2 columns 4 3 1 2 BFG93A/X 1 2 3 4 collector emitter base emitter Fig.1 SOT143B. MARKING TYPE NUMBER BFG93A BFG93A/X CODE R8% %MX QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain Ts ≤ 85 °C IC = ic = 0; VCB = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz F noise figure Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz open base CONDITIONS open emitter − − − − − 4.5 − − − MIN. − − − − 0.6 6 16 10 1.7 TYP. MAX. 15 12 35 300 − − − − − UNIT V V mA mW pF GHz dB dB dB Rev. 05 - 26 November 2007 2 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB = 5 V IC = 30 mA; VCE = 5 V IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB = 5 V; f = 1 MHz IC = ic = 0; VCB = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz F noise figure Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz Note MIN. − 40 − − − 4.5 − − − − TYP. − 90 0.9 1.9 0.6 6 16 10 1.7 2.3 MAX. 50 − − − − − − − − − pF pF pF GHz dB dB dB dB UNIT nA PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 290 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction operating temperature Ts ≤ 85 °C; note 1 open base open collector CONDITIONS open emitter − − − − − −65 − MIN. MAX. 15 12 2 35 300 +150 175 V V V mA mW °C °C UNIT S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 – S 11 2 ) ( 1 – S 22 2 ) Rev. 05 - 26 November 2007 3 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X MBG245 400 handbook, halfpage P tot (mW) 300 handbook, halfpage 120 MCD087 h FE 80 200 40 100 0 0 50 100 150 Ts ( o C) 200 0 0 10 20 IC (mA) 30 VCE = 5 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current; typical values. handbook, halfpage 1.0 MCD088 handbook, halfpage 8 MCD089 C re (pF) 0.8 fT (GHz) 6 0.6 4 0.4 2 0.2 0 0 4 8 12 VCB (V) 16 0 0 10 20 30 I C (mA) 40 IC = ic = 0; f = 1 MHz. VCE = 5 V; Tamb = 25 °C; f = 500 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values. Rev. 05 - 26 November 2007 4 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X handbook, halfpage 30 MCD090 handbook, halfpage 30 MCD091 gain (dB) 20 MSG gain (dB) G UM 20 MSG G UM 10 10 0 0 10 20 30 I C (mA) 40 0 0 10 20 30 I C (mA) 40 VCE = 8 V; f = 500 MHz. VCE = 8 V; f = 1 GHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 50 MCD092 handbook, halfpage 50 MCD093 gain (dB) gain (dB) 40 G UM 40 MSG G UM 30 MSG 30 20 20 G max 10 G max 10 0 10 10 2 10 3 f (MHz) 10 4 0 10 10 2 10 3 f (MHz) 10 4 VCE = 8 V; IC = 10 mA. VCE = 8 V; IC = 30 mA. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. Rev. 05 - 26 November 2007 5 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X handbook, halfpage 4 MCD094 handbook, halfpage 4 MCD095 F (dB) 3 f = 2 GHz F (dB) 3 1 GHz 2 500 MHz 2 I C = 30 mA 1 1 10 mA 5 mA 0 1 10 I C (mA) 10 2 0 10 2 10 3 f (MHz) 10 4 VCE = 8 V. VCE = 8 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. stability circle handbook, full pagewidth 1 2 0.5 un re sta gio ble n 0.2 OPT +j MSG 0.2 22.2 dB 0.5 F min = 1.4 dB 1 2 5 10 5 10 * ∞ 10 5 –j 2 dB 0.2 3 dB 4 dB 0.5 Zo = 50 Ω. Maximum stable gain = 22.2 dB. 1 2 MCD096 Fig.12 Common emitter noise figure circles; typical values. Rev. 05 - 26 November 2007 6 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X 1 handbook, full pagewidth 0.5 2 stability circle 0.2 OPT unstable region +j 0 –j MSG 0.2 10.4 dB 0.5 F min = 2 dB 1 2.5 dB 5 4 dB 6 dB 0.5 1 Zo = 50 Ω. Maximum stable gain = 10.4 dB. 2 MCD097 5 * 10 2 5 10 ∞ 10 0.2 Fig.13 Common emitter noise figure circles; typical values. 1 handbook, full pagewidth 0.5 2 5 dB 0.2 4 dB 3.5 dB +j OPT –j 0.2 0.5 F min = 3 dB 5 10 * 1 2 5 10 ∞ 10 5 0.2 G max = 9 dB 8 dB 7 dB 0.5 1 2 * MCD098 Zo = 50 Ω. Fig.14 Common emitter noise figure circles; typical values. Rev. 05 - 26 November 2007 7 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X 1 handbook, full pagewidth 0.5 2 3 GHz 0.2 5 10 +j 0 –j 10 40 MHz 0.2 5 0.2 0.5 1 2 5 10 ∞ 0.5 1 VCE = 8 V; IC = 30 mA; Zo = 50 Ω. 2 MCD099 Fig.15 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 50 40 30 20 10 3 GHz 0o _ 135 o _ 45 o VCE = 8 V; IC = 30 mA; Rmax = 50 Ω. _ 90 o MCD100 Fig.16 Common emitter forward transmission coefficient (S21). Rev. 05 - 26 November 2007 8 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X 90 o handbook, full pagewidth 135 o 3 GHz 45 o 180 o 40 MHz 0.04 0.08 0.12 0.16 0.20 0o _ 135 o _ 45 o VCE = 8 V; IC = 30 mA; Rmax = 0.2 Ω. _ 90 o MCD102 Fig.17 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 40 MHz 3 GHz 0.2 5 10 0.2 0.5 1 2 5 10 ∞ 0.5 1 VCE = 10 V; IC = 15 mA; Zo = 50 Ω. 2 MCD101 Fig.18 Common emitter output reflection coefficient (S22). Rev. 05 - 26 November 2007 9 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X SPICE parameters for BFR91A(/X) die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 (note 1) 20 (note 1) 21 (note 1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35 (note 1) PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VALUE 1.328 102.0 1.000 51.90 8.155 13.90 15.12 17.69 994.0 3.280 10.00 1.043 1.189 10.00 1.000 10.00 763.6 9.000 0.000 1.110 3.000 2.032 600.0 290.0 6.557 38.97 10.93 521.0 0.000 1.003 340.8 194.2 120.0 3.073 0.000 − − V A fA − − m V A aA − Ω µA Ω mΩ Ω − EV − pF mV m ps − V mA deg pF mV m m ns F List of components (see Fig.19) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 84 17 191 0.12 0.21 0.06 0.95 0.40 VALUE fF fF fF nH nH nH nH nH UNIT E QLB = 50; QLE = 50. QLB,E (f) = QLB,E √ (f/fc). fc = scaling frequency = 1000 MHz. L3 C be B L1 LB B' E' LE MBC964 UNIT fA SEQUENCE No. 36 (note 1) 37 (note 1) 38 Note PARAMETER VJS MJS FC VALUE 750.0 0.000 800.0 − UNIT mV m 1. These parameters have not been extracted, the default values are shown. handbook, halfpage C cb L2 C' C Cce Fig.19 Package equivalent circuit SOT143B. Rev. 05 - 26 November 2007 10 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 Rev. 05 - 26 November 2007 11 of 13 NXP Semiconductors BFG93A; BFG93A/X NPN 6 GHz wideband transistors Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 05 - 26 November 2007 12 of 13 NXP Semiconductors BFG93A; BFG93A/X NPN 6 GHz wideband transistors Revision history Revision history Document ID BFG93A_X_N_5 Modifications: BFG93A_X_4 (9397 750 04351) BFG93SERIES_3 BFG93SERIES_2 BFG93_SERIES_1 Release date 20071126 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes BFG93A_X_4 BFG93SERIES_3 BFG93SERIES_2 BFG93_SERIES_1 - • Marking table on page 2; changed code 19980923 19950925 - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 November 2007 Document identifier: BFG93A_X_N_5