BFS540_00

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 package. APPLICATIONS RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. 2000 May 30 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature Ts ≤ 80 °C; note 1 RBE = 0 open collector CONDITIONS open emitter MIN. − − − − − −65 − PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 80 °C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 °C IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C open base CONDITIONS open emitter MIN. − − − − 100 − − − TYP. − − − − 120 9 14 1.3 PINNING PIN 1 2 3 base emitter collector Marking code: N4. Top view BFS540 DESCRIPTION NPN transistor in a SOT323 plastic package. handbook, 2 columns 3 DESCRIPTION 1 2 MBC870 Fig.1 SOT323. MAX. 20 15 120 500 250 − − 1.7 UNIT V V mA mW GHz dB dB MAX. 20 15 2.5 120 500 150 175 UNIT V V V mA mW °C °C Philips Semiconductors Product specification NPN 9 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency CONDITIONS IE = 0; VCE = 8 V IC = 40 mA; VCE = 8 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 8 V; f = 1 MHz IC = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C MIN. − 100 − − − − − − 12 − − − − − TYP. − 120 2 0.9 0.6 9 14 8 13 1.3 1.9 2.1 21 34 PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤ 80 °C; note 1 BFS540 VALUE 190 UNIT K/W MAX. 50 250 − − − − − − − 1.8 2.4 − − − UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; (note 1) Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C |s21|2 F insertion power gain noise figure IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C PL1 ITO Notes output power at 1 dB gain compression third order intercept point Ic = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C note 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero and s 21 G UM = 10 log ------------------------------------------------------- dB. 2 2 ( 1 – s 11 ) ( 1 – s 22 ) 2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz. 2 2000 May 30 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 MRC008 - 1 400 handbook, halfpage Ptot (mW) 300 handbook, halfpage 200 MRC010 h FE 150 200 100 100 50 0 0 50 100 150 T ( o C) s 200 0 10−2 10−1 1 10 IC (mA) 102 VCE = 8 V; Tj = 25 °C. VCE ≤ 10 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current. handbook, halfpage 1 MRC001 Cre (pF) handbook, halfpage 12 MRC002 0.8 fT (GHz) VCE = 8 V 8 0.6 4V 0.4 4 0.2 0 0 2 4 6 8 10 12 VCB (V) 0 1 10 I C (mA) 102 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. 2000 May 30 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. BFS540 handbook, halfpage 20 GUM (dB) 16 MRC007 handbook, halfpage 15 MRC006 gain (dB) VCE = 8 V 4V 10 12 G max GUM 8 5 4 0 0 10 20 30 f = 900 MHz; Tamb = 25 °C. 40 50 IC (mA) 0 0 20 40 IC (mA) 60 VCE = 8 V; f = 2 GHz; Tamb = 25 °C. Fig.6 Maximum unilateral power gain as a function of collector current. Fig.7 Gain as a function of collector current. handbook, halfpage 50 MRC004 handbook, halfpage gain (dB) 40 G UM 30 MSG 20 G max 10 50 gain (dB) 40 MRC005 G UM 30 MSG 20 10 G max 0 10−2 10−1 1 f (GHz) 10 0 10−2 10−1 1 f (GHz) 10 IC = 10 mA; VCE = 8 V; Tamb = 25 °C. IC = 40 mA; VCE = 8 V; Tamb = 25 °C. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. 2000 May 30 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 handbook, halfpage 4 MRC009 handbook, halfpage 4 MRC003 F (dB) 3 f= 2 GHz 2 F (dB) 3 IC = 40 mA 10 mA 2 900 MHz 1 500 MHz 1 0 1 10 IC (mA) 102 0 10−1 1 f (GHz) 10 VCE = 8 V; Tamb = 25 °C. VCE = 8 V; Tamb = 25 °C. Fig.10 Minimum noise figure as a function of collector current. Fig.11 Minimum noise figure as a function of frequency. 2000 May 30 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 handbook, full pagewidth 90° 1.0 1 135° pot. unst. region 0.5 2 45° 0.8 0.6 0.4 0.2 2 5 0° 0 0.2 Fmin = 1. 3 dB ΓOPT 0.2 0.5 F = 1.5 dB F = 2 dB 1 5 180° 0 stability circle 0.2 F = 3 dB 5 −135° IC = 10 mA; VCE = 8 V; f = 900 MHz; Zo = 50 Ω. 0.5 1 2 −45° MRC079 1.0 −90° Fig.12 Noise circle. handbook, full pagewidth 90° 1.0 1 135° 0.5 2 45° 0.8 0.6 0.4 0.2 2 5 0° 0 0.2 F = 4 dB F = 3 dB F = 2.5 dB 0.5 1 5 180° 0 ΓMS 0.2 Gmax = 8.7 dB Fmin = 2. 1 dB G = 8 dB ΓOPT 0.2 G = 7 dB G = 6 dB 5 −135° 0.5 1 2 −45° MRC080 1.0 IC = 10 mA; VCE = 8 V; f = 2 GHz; Zo = 50 Ω. −90° Fig.13 Noise circle. 2000 May 30 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 handbook, full pagewidth 90° 1.0 1 135° 0.5 2 45° 0.8 0.6 0.4 0.2 180° 0 0.2 0.5 1 2 5 0° 0 0.2 3 GHz 5 0.2 40 MHz 5 −135° 0.5 1 2 −45° MRC062 1.0 IC = 40 mA; VCE = 8 V; Zo = 50 Ω. −90° Fig.14 Common emitter input reflection coefficient (s11). handbook, full pagewidth 90° 135° 45° 40 MHz 180° 3 GHz 50 40 30 20 10 0° −135° −45° −90° IC = 40 mA; VCE = 8 V. MRC063 Fig.15 Common emitter forward transmission coefficient (s21). 2000 May 30 8 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 handbook, full pagewidth 90° 135° 45° 3 GHz 180° 0.5 40 MHz 0.4 0.3 0.2 0.1 0° −135° −45° −90° IC = 40 mA; VCE = 8 V. MRC064 Fig.16 Common emitter reverse transmission coefficient (s12). handbook, full pagewidth 90° 1.0 1 135° 0.5 2 45° 0.8 0.6 0.4 0.2 180° 0 0.2 0.5 1 2 5 0° 0 0.2 5 3 GHz 40 MHz 0.2 5 −135° 0.5 1 2 −45° MRC065 1.0 IC = 40 mA; VCE = 8 V; Zo = 50 Ω. −90° Fig.17 Common emitter output reflection coefficient (s22). 2000 May 30 9 Philips Semiconductors Product specification NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFS540 SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2000 May 30 10 Philips Semiconductors Product specification NPN 9 GHz wideband transistor DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1) BFS540 This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. 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