BGA2776

BGA2776 MMIC wideband amplifier Rev. 04 — 29 August 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification MMIC wideband amplifier FEATURES • Internally matched • Very wide frequency range • Very flat gain • High gain • High output power • Unconditionally stable. APPLICATIONS • Cable systems • LNB IF amplifiers • General purpose • ISM. DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. QUICK REFERENCE DATA SYMBOL VS IS s212 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CAUTION CONDITIONS 5 24.4 23.2 4.9 10.5 TYP. 6 − − − − Marking code: G5-. BGA2776 PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF i n DESCRIPTION 6 5 4 1 6 3 1 Top view 2 3 MAM455 4 2, 5 Fig.1 Simplified outline (SOT363) and symbol. MAX. UNIT V mA dB dB dBm This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Rev. 04 – 29 August 2007 2 of 10 NXP Semiconductors Product specification MMIC wideband amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VS IS Ptot Tstg Tj PD PARAMETER DC supply voltage supply current total power dissipation storage temperature operating junction temperature maximum drive power Ts ≤ 80 °C CONDITIONS RF input AC coupled − − − −65 − − MIN. 6 BGA2776 MAX. 34 200 +150 150 10 UNIT V mA mW °C °C dBm THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point CONDITIONS Ptot = 200 mW; Ts ≤ 80 °C VALUE 300 UNIT K/W CHARACTERISTICS VS = 5 V; IS = 24.4 mA; f = 1 GHz; Tj = 25 °C; unless otherwise specified. SYMBOL IS s212 RL IN RL OUT NF BW PL(sat) PL 1 dB IP3(in) IP3(out) PARAMETER supply current inser tion power gain return losses input return losses output noise figure bandwidth saturated load power load power input intercept point output intercept point f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz at s212 f = 1 GHz f = 2 GHz at 1 dB gain compression; f = 1 GHz at 1 dB gain compression; f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz CONDITIONS − − − − − − − − − − − − − − − − MIN. 19 TYP. 24.4 23.2 23.2 9 7 17 9 4.9 5.3 2.8 10.5 8.1 7.2 6 −4.6 −8.8 18.6 14.4 − − − − − − − − − − − − − − − − − MAX. 34 UNIT mA dB dB dB dB dB dB dB dB GHz dBm dBm dBm dBm dBm dBm dBm dBm −3 dB below flat gain at 1 GHz − Rev. 04 – 29 August 2007 3 of 10 NXP Semiconductors Product specification MMIC wideband amplifier APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGA2776 MMIC. The device is internally matched to 50 Ω, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should be not more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. The nominal value of the RF choke L1 is 100 nH. At frequencies below 100 MHz this value should be increased to 220 nH. At frequencies above 1 GHz a much lower value must be used (e.g. 10 nH) to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should be chosen. Both the RF choke L1 and the 22 nF supply decoupling capacitor C1 should be located as closely as possible to the MMIC. Separate paths must be used for the ground planes of the ground pins GND1 and GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance. handbook, halfpage BGA2776 In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications. DC-block handbook, halfpage 100 pF input DC-block 100 pF DC-block 100 pF output MGU437 Fig.3 Simple cascade circuit. mixer to IF circuit or demodulator wideband amplifier oscillator from RF circuit MGU438 Fig.4 IF amplifier application. V halfpage handbook, s C1 Vs RF input C2 GND1 GND2 RF in RF out C3 MGU436 L1 RF output handbook, halfpage mixer to IF circuit or demodulator LNA wideband amplifier oscillator MGU439 antenna Fig.2 Typical application circuit. Fig.5 RF amplifier application. Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2. The excellent wideband characteristics of the MMIC make it and ideal building block in IF amplifier applications such as LBNs (see Fig.4). As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5). handbook, halfpage mixer to power amplifier wideband amplifier oscillator from modulation or IF circuit MGU440 Fig.6 Power amplifier driver application. Rev. 04 – 29 August 2007 4 of 10 NXP Semiconductors Product specification MMIC wideband amplifier BGA2776 handbook, full pagewidth 90° +1 135° +0.5 +2 45° 1.0 0.8 0.6 0.4 0.2 5 0° 0 +0.2 100 MHz 180° 0 0.2 0.5 1 3 GHz −0.2 2 +5 −5 −0.5 −135° −1 −2 −45° MGU449 1.0 −90° IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω. Fig.7 Input reflection coefficient (s11); typical values. handbook, full pagewidth 90° +1 135° +0.5 3 GHz +2 45° 1.0 0.8 0.6 0.4 0.2 180° 0 0.2 0.5 1 2 5 0° 0 +0.2 100 MHz +5 −0.2 −5 −0.5 −135° −1 −2 −45° MGU450 1.0 −90° IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω. Fig.8 Output reflection coefficient (s22); typical values. Rev. 04 – 29 August 2007 5 of 10 NXP Semiconductors Product specification MMIC wideband amplifier BGA2776 handbook, halfpage s2 0 MGU451 handbook, halfpage 30 2 MGU452 12 (dB) s21 (dBm) −20 20 −40 10 −60 0 0 1000 2000 f (MHz) 3000 0 1000 2000 f (MHz) 3000 IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω. IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω. Fig.9 Isolation (s122) as a function of frequency; typical values. Fig.10 Insertion gain (s212) as a function of frequency; typical values. handbook, halfpage 20 MGU453 handbook, halfpage 20 MGU454 PL (dBm) 10 PL (dBm) 10 0 0 −10 −10 −20 −40 −30 −20 −10 PD (dBm) 0 −20 −40 −30 −20 −10 PD (dBm) 0 VS = 5 V; f = 1 GHz; ZO = 50 Ω. VS = 5 V; f = 2 GHz; ZO = 50 Ω. Fig.11 Load power as a function of drive power at 1 GHz; typical values. Fig.12 Load power as a function of drive power at 2 GHz; typical values. Rev. 04 – 29 August 2007 6 of 10 NXP Semiconductors Product specification MMIC wideband amplifier BGA2776 handbook, halfpage 10 MGU455 handbook, halfpage 5 MGU456 NF (dB) 8 K 4 6 3 4 2 2 1 0 0 1000 2000 f (MHz) 3000 0 0 1000 2000 f (MHz) 3000 IS = 23.8 mA; VS = 5 V; ZO = 50 Ω. IS = 23.8 mA; VS = 5 V; ZO = 50 Ω. Fig.13 Noise figure as a function of frequency; typical values. Fig.14 Stability factor as a function of frequency; typical values. Scattering parameters IS = 23.8 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C. f (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 s11 MAGNITUDE (ratio) 0.24807 0.27028 0.28518 0.30074 0.32672 0.35611 0.38865 0.41966 0.44966 0.46509 0.45980 0.43684 0.38779 0.32424 0.25311 0.18665 ANGLE (deg) 33.20 15.23 5.613 1.998 0.099 −1.702 −4.465 −7.778 −12.12 −17.78 −24.85 −32.59 −40.66 −50.49 −57.33 −65.52 s21 MAGNITUDE (ratio) 13.128 13.939 14.233 14.370 14.418 14.566 14.683 14.828 14.911 14.941 14.688 14.389 13.533 12.355 11.049 9.2745 ANGLE (deg) 18.88 1.305 −16.20 −29.60 −42.25 −54.66 −67.44 −80.86 −94.49 −109.4 −124.9 −140.7 −157.9 −174.5 169.3 154.9 s12 MAGNITUDE (ratio) 0.03393 0.02979 0.02720 0.02573 0.02434 0.02310 0.02189 0.02100 0.01929 0.01774 0.01494 0.01193 0.00828 0.00477 0.00146 0.00279 ANGLE (deg) 18.97 7.840 −3.208 −8.356 −11.95 −14.59 −17.14 −20.38 −24.40 −29.44 −36.30 −41.31 −43.81 −48.94 −17.41 94.00 s22 MAGNITUDE (ratio) 0.33203 0.16144 0.04702 0.05168 0.09810 0.13562 0.16792 0.19808 0.23691 0.28834 0.34770 0.40964 0.46607 0.51421 0.56131 0.59748 ANGLE (deg) 77.92 92.47 127.5 −147.7 −134.1 −139.8 −152.8 −169.9 171.6 153.5 137.6 124.2 113.1 105.9 98.30 93.63 Rev. 04 – 29 August 2007 7 of 10 NXP Semiconductors Product specification MMIC wideband amplifier PACKAGE OUTLINE Plastic surface mounted package; 6 leads BGA2776 SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Rev. 04 – 29 August 2007 8 of 10 NXP Semiconductors BGA2776 MMIC wideband amplifier Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 04 – 29 August 2007 9 of 10 NXP Semiconductors BGA2776 MMIC wideband amplifier Revision history Revision history Document ID BGA2776_N_4 Modifications: BGA2776_3 (9397 750 10016) BGA2776_2 (9397 750 08548) BGA2776_N_1 (9397 750 08193) Release date 20070829 Data sheet status Product data sheet Product specification Product specification Preliminary specification Change notice Supersedes BGA2776_3 BGA2776_2 BGA2776_N_1 - • amended marking code (Fig. 1) 20020806 20011019 20010330 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 August 2007 Document identifier: BGA2776_N_4 Rev. 04 – 29 August 2007 10 of 10