BLF145

BLF145 HF power MOS transistor Rev. 04 — 5 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification HF power MOS transistor BLF145 FEATURES • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123A PIN 1 2 3 4 drain source gate source DESCRIPTION PIN CONFIGURATION handbook, halfpage 1 4 d g MBB072 s 2 3 MSB057 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains ber yllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessar y safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION SSB, class-A SSB, class-AB Note 1. 2-tone efficiency. f (MHz) 28 28 VDS (V) 28 28 ID (A) 1.3 − PL (W) 8 (PEP) 30 (PEP) Gp (dB) >24 typ. 20 ηD (%)(1) − typ. 40 d3 (dB) 24 typ. 27 d3 (dB)(1) >−40 typ. −43 d5 (dB)(1)