BLF578

BLF578 Power LDMOS transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Production test information f (MHz) pulsed RF 225 VDS (V) 50 PL (W) 1200 Gp (dB) 24 ηD (%) 70 Mode of operation CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 µs with δ of 20 %: N Output power = 1200 W N Power gain = 24 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (10 MHz to 500 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I Industrial, scientific and medical applications I Broadcast transmitter applications NXP Semiconductors BLF578 Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2 5 Graphic symbol 1 3 3 4 4 5 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF578 Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 110 +11 112 +150 225 Unit V V A °C °C BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 2 of 14 NXP Semiconductors BLF578 Power LDMOS transistor 5. Thermal characteristics Table 5. Rth(j-c) [1] Thermal characteristics Conditions [1] Symbol Parameter Typ 0.03 Unit K/W thermal resistance from junction to case Tcase = 80 °C; PL = 1200 W; tp = 100 µs; δ = 20 % Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS RDS(on) Crs Ciss Coss gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current drain-source on-state resistance feedback capacitance input capacitance output capacitance Conditions VGS = 0 V; ID = 2.5 mA VDS = 10 V; ID = 500 mA VDS = 50 V; ID = 20 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VGS = VGS(th) + 3.75 V; ID = 16.66 A VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz Min 110 1.25 58 Typ 1.7 75 0.07 3 403 138 Max 2.25 2.8 280 Unit V V µA A nA Ω pF pF pF V Table 7. RF characteristics Mode of operation: pulsed RF; tp = 100 µs; δ = 20 %; f = 225 MHz; RF performance at VDS = 50 V; IDq = 40 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Gp RLin ηD power gain input return loss drain efficiency Conditions PL = 1200 W PL = 1200 W PL = 1200 W Min Typ Max Unit dB % 24 25 70 dB BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 3 of 14 NXP Semiconductors BLF578 Power LDMOS transistor 900 Coss (pF) 750 001aaj113 600 450 300 150 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section 6.1 Ruggedness in class-AB operation The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W pulsed; f = 225 MHz. BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 4 of 14 NXP Semiconductors BLF578 Power LDMOS transistor 7. Application information 7.1 Reliability 105 Years (1) (2) (3) (4) (5) (6) 001aaj114 104 103 102 (7) (8) (9) (10) (11) 10 1 0 4 8 12 16 Idc (A) 20 TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1/ δ. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 2. BLF578 electromigration (ID, total device) BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 5 of 14 NXP Semiconductors BLF578 Power LDMOS transistor 8. Test information 8.1 Impedance information Table 8. Typical impedance Simulated ZS and ZL test circuit impedances. f MHz 225 ZS Ω 3.2 + j2.6 ZL Ω 3.7 − j0.2 drain ZL gate ZS 001aaf059 Fig 3. Definition of transistor impedance BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 6 of 14 NXP Semiconductors BLF578 Power LDMOS transistor 8.2 RF performance The following figures are measured in a class-AB production test circuit. 8.2.1 1-Tone CW pulsed 001aaj119 001aaj120 26 Gp (dB) 24 ηD 22 80 ηD (%) 28 Gp (dB) 26 (5) (4) Gp 60 40 24 (3) (2) (1) 20 20 22 18 100 300 500 700 900 1100 0 1300 1500 PL (W) 20 100 300 500 700 900 1100 1300 1500 PL (W) VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 µs; δ = 20 %. VDS = 50 V; f = 225 MHz; tp = 100 µs; δ = 20 %. (1) IDq = 0 mA (2) IDq = 20 mA (3) IDq = 40 mA (4) IDq = 80 mA (5) IDq = 150 mA Fig 4. Power gain and drain efficiency as functions of load power; typical values Fig 5. Pulsed power gain as function of load power; typical values BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 7 of 14 NXP Semiconductors BLF578 Power LDMOS transistor 26 Gp (dB) 24 001aaj121 66 PL (dBm) 64 ideal PL 001aaj122 (2) 22 (2) (1) (3) 62 (1) PL 60 20 18 100 58 300 500 700 900 1100 1300 1500 PL (W) 34 36 38 Ps (dBm) 40 VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 µs; δ = 20 %. (1) VDS = 40 V (2) VDS = 45 V (3) VDS = 50 V VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 µs; δ = 20 %. (1) PL(1dB) = 61.1 dBm (1300 W) (2) PL(3dB) = 61.5 dBm (1425 W) Fig 6. Pulsed power gain as function of load power; typical values Fig 7. Load Power as function of source power; typical values 8.3 Test circuit Table 9. List of components For production test circuit, see Figure 8 and Figure 9. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. Component C1, C2, C11, C12 C2, C3, C27, C28 C5, C7, C8, C21, C22 C6 C9, C10, C13, C15 C14 C16, C17 C18 C19 C20 C23 C24 C25, C26 L1, L2 L3, L12 L4, L5, L10, L11 BLF578_1 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor 3 turns 1 mm copper wire stripline stripline Value 4.7 µF 100 nF 1 nF 30 pF 62 pF 36 pF 24 pF 30 pF 27 pF 9.1 pF 13 pF 16 pF 220 µF; 63 V D = 2 mm; length = 3 mm [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] Remarks TDK4532X7R1E475Mt020U Murata X7R 250 V (L × W) 15 mm × 2.4 mm (L × W) 47 mm × 10 mm © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 8 of 14 NXP Semiconductors BLF578 Power LDMOS transistor Table 9. List of components …continued For production test circuit, see Figure 8 and Figure 9. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. Component L6, L7, L8, L9 R1, R2 R3, R4 R5, R6 T1, T2 [1] Description stripline metal film resistor metal film resistor metal film resistor semi rigid coax Value 2 Ω; 0.6 W 20 Ω; 0.6 W 1 Ω; 0.6 W 50 Ω; 58 mm Remarks (L × W) 8 mm × 15 mm EZ-141-AL-TP-M17 American Technical Ceramics type 100B or capacitor of same quality. VGG C1 VDD C25 C11 C2 R3 T2 C13 C7 C5 L3 C21 L12 C24 R5 C28 L1 R1 input 50 Ω C9 L4 L6 L8 C14 L10 C17 C19 output 50 Ω C6 C8 T1 C10 L5 L7 L9 C15 L11 C16 C18 C20 C22 C23 R6 L2 C27 R2 C3 R4 C12 C4 C26 VGG VDD 001aaj123 See Table 9 for a list of components. Fig 8. Class-AB common-source production test circuit BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 9 of 14 NXP Semiconductors BLF578 Power LDMOS transistor C25 C11 C1 C2 R1 C7 C5 C6 C8 R2 C3 C4 C9 C10 R4 C15 C16 C18 C20 C22 R6 L2 C27 C26 R3 C13 C14 C17 C19 C23 C24 T2 C28 L1 R5 C21 T1 C12 001aaj124 See Table 9 for a list of components. Fig 9. Component layout for class-AB production test circuit BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 10 of 14 NXP Semiconductors BLF578 Power LDMOS transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 q H1 C B w2 M C M c 1 2 H U2 p E1 w1 M A M B M E 5 L A 3 b e 4 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.31 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25 9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96 1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72 41.28 10.29 0.25 41.02 10.03 0.210 0.465 0.006 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.156 0.455 0.003 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 1.615 0.395 OUTLINE VERSION SOT539A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-28 00-03-03 Fig 10. Package outline SOT539A BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 11 of 14 NXP Semiconductors BLF578 Power LDMOS transistor 10. Abbreviations Table 10. Acronym CW EDGE GSM HF LDMOS LDMOST RF TTF VSWR Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Time To Failure Voltage Standing-Wave Ratio 11. Revision history Table 11. BLF578_1 Revision history Release date 20081211 Data sheet status Objective data sheet Change notice Supersedes Document ID BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 12 of 14 NXP Semiconductors BLF578 Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF578_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 13 of 14 NXP Semiconductors BLF578 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 8 8.1 8.2 8.2.1 8.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Impedance information . . . . . . . . . . . . . . . . . . . 6 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 7 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2008 Document identifier: BLF578_1