BLF6G22-180PN

BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 32 PL(AV) (W) 50 Gp (dB) 17.5 ηD (%) 27.5 ACPR (dBc) −35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 32 V and an IDq of 1600 mA: N Average output power = 50 W N Power gain = 17.5 dB (typ) N Efficiency = 27.5 % N ACPR = −35 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Qualified up to a supply voltage of 32 V I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G22-180PN Power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2 5 Graphic symbol 1 3 3 4 4 5 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G22-180PN Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tcase Tj Parameter drain-source voltage gate-source voltage storage temperature case temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 +150 150 225 Unit V V °C °C °C 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Conditions Tcase = 80 °C; PL(AV) = 50 W Typ Unit 0.45 K/W Rth(j-case) thermal resistance from junction to case BLF6G22-180PN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 April 2008 2 of 11 NXP Semiconductors BLF6G22-180PN Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS gate-source threshold voltage gate-source quiescent voltage drain leakage current Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 144 mA VDS = 32 V; ID = 800 mA VGS = 0 V VDS = 28 V VDS = 60 V IDSX IGSS gfs RDS(on) drain cut-off current gate leakage current forward transconductance drain-source on-state resistance VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 7.2 A VGS = VGS(th) + 3.75 V; ID = 5 A 25 10 0.1 3 5 300 µA µA A nA S Min 65 Typ Max 2.3 2.45 Unit V V V 1.575 1.9 1.725 2.1 0.165 Ω 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Gp RLin ηD ACPR Parameter power gain input return loss drain efficiency adjacent channel power ratio Conditions PL(AV) = 50 W PL(AV) = 50 W PL(AV) = 50 W PL(AV) = 50 W Min 16.3 25 Typ −10 −35 Max −6.5 −33 Unit dB dB % dBc 17.5 18.7 27.5 - Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 2162.5 MHz; f2 = 2167.5 MHz; RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PARO output peak-to-average ratio Conditions PL(AV) = 115 W; at 0.01 % probability on CCDF Min Typ Max Unit dB 4.05 4.5 7.1 Ruggedness in class-AB operation The BLF6G22-180PN is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1600 mA; PL = 180 W (CW); f = 2170 MHz. BLF6G22-180PN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 April 2008 3 of 11 NXP Semiconductors BLF6G22-180PN Power LDMOS transistor 20 Gp (dB) 18 Gp 001aah632 60 ηD (%) 40 ηD 16 20 14 0 50 100 150 PL (W) 0 200 VDS = 32 V; IDq = 1600 mA; f = 2170 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 22 Gp (dB) 20 ηD 001aah633 50 ηD (%) 40 −10 IMD (dBc) −30 001aah634 IMD3 18 Gp 30 IMD5 20 −50 IMD7 16 14 10 12 0 100 200 PL(PEP) (W) 0 300 −70 0 100 200 PL(PEP) (W) 300 VDS = 32 V; IDq = 1600 mA; f1 = 2170 MHz; f2 = 2170.1 MHz. VDS = 32 V; IDq = 1600 mA; f1 = 2170 MHz; f2 = 2170.1 MHz. Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values Fig 3. Two-tone intermodulation distortion as a function of peak envelope load power; typical values BLF6G22-180PN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 April 2008 4 of 11 NXP Semiconductors BLF6G22-180PN Power LDMOS transistor 21 Gp (dB) 20 19 18 001aah635 ηD 35 ηD (%) 30 25 20 −20 ACPR (dBc) −30 001aah636 Gp 17 16 15 14 0 10 20 30 40 50 15 10 5 0 60 70 PL(AV) (W) −40 −50 −60 0 10 20 30 40 50 60 70 PL(AV) (W) VDS = 32 V; IDq = 1600 mA; f1 = 2162.5 MHz; f2 = 2167.5 MHz; carrier spacing 5 MHz. VDS = 32 V; IDq = 1600 mA; f1 = 2162.5 MHz; f2 = 2167.5 MHz; carrier spacing 5 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent channel power ratio as function of average load power; typical values 21 Gp (dB) 20 19 18 17 16 15 14 0 10 20 30 40 001aah637 ηD 35 ηD (%) 30 25 20 −20 ACPR, IMD3 (dBc) −30 001aah638 IMD3 ACPR Gp −40 15 10 5 0 60 70 PL(AV) (W) −60 0 10 20 30 40 50 60 70 PL(AV) (W) −50 50 VDS = 32 V; IDq = 1600 mA; f1 = 2157.5 MHz; f2 = 2167.5 MHz; carrier spacing 10 MHz. VDS = 32 V; IDq = 1600 mA; f1 = 2157.5 MHz; f2 = 2167.5 MHz; carrier spacing 10 MHz. Fig 6. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 7. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as functions of average load power; typical values BLF6G22-180PN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 April 2008 5 of 11 NXP Semiconductors BLF6G22-180PN Power LDMOS transistor 8. Test information C2 C3 C4 C7 C8 C9 C10 C11 R2 input 50 Ω C1 R1 C12 output 50 Ω C13 R3 C14 C5 C6 C15 C16 001aah639 See Table 9 for list of components. Fig 8. Test circuit for operation at 2110 MHz and 2170 MHz BLF6G22-180PN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 April 2008 6 of 11 NXP Semiconductors BLF6G22-180PN Power LDMOS transistor C9 C8 C2 C7 C10 C11 C3 C4 R2 C1 R1 C12 C13 INPUT C6 C5 R3 C14 C15 C16 OUTPUT TB BLF6G22-180PN TB BLF6G22-180PN 001aah640 Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 9. Component layout for 2110 MHz and 2170 MHz test circuit Table 9. List of components For test circuit, see Figure 8 and Figure 9. Component C1, C3, C5 C2, C8, C16 C4, C6 C7, C14 C9 C10, C11, C15 C12 C13 R1 R2, R3 [1] [2] Description ATC multilayer ceramic chip capacitor TDK multilayer ceramic chip capacitor TDK multilayer ceramic chip capacitor ATC multilayer ceramic chip capacitor electrolytic capacitor Murata ceramic chip capacitor ATC multilayer ceramic chip capacitor ATC multilayer ceramic chip capacitor chip resistor chip resistor Value 10 pF 4.7 µF 220 nF 10 pF 220 µF; 63 V 100 nF 15 pF 0.3 pF 33 Ω 5.6 Ω [2] [1] [2] [1] Remarks American technical ceramics type 100B or capacitor of same quality. American technical ceramics type 180R or capacitor of same quality. BLF6G22-180PN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 April 2008 7 of 11 NXP Semiconductors BLF6G22-180PN Power LDMOS transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 q H1 C B w2 M C M c 1 2 H U2 p E1 w1 M A M B M E 5 L A 3 b e 4 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.31 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25 9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96 1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72 41.28 10.29 0.25 41.02 10.03 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 0.210 0.465 0.006 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 0.156 0.455 0.003 1.218 1.219 1.615 0.395 OUTLINE VERSION SOT539A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-28 00-03-03 Fig 10. Package outline SOT539A BLF6G22-180PN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 April 2008 8 of 11 NXP Semiconductors BLF6G22-180PN Power LDMOS transistor 10. Abbreviations Table 10. Acronym 3GPP CCDF CW DPCH IMD LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel InterModulation Distortion Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Release date 20080423 20080221 Data sheet status Product data sheet Preliminary data sheet Change notice Supersedes BLF6G22-180PN_1 Document ID BLF6G22-180PN_2 BLF6G22-180PN_1 BLF6G22-180PN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 April 2008 9 of 11 NXP Semiconductors BLF6G22-180PN Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G22-180PN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 23 April 2008 10 of 11 NXP Semiconductors BLF6G22-180PN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 April 2008 Document identifier: BLF6G22-180PN_2