BLF6G22LS-180RN

BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 16.0 ηD (%) 25 IMD3 (dBc) −38[1] ACPR (dBc) −42[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efficiency = 25 % N IMD3 = −38 dBc N ACPR = −42 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF6G22-180RN (SOT502A) 1 3 2 2 3 sym112 1 BLF6G22LS-180RN (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name Description BLF6G22-180RN flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number BLF6G22LS-180RN - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj BLF6G22-180RN_22LS-180RN_1 Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 - Max 65 +13 49 +150 225 Unit V V A °C °C © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 20 November 2008 2 of 11 NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 40 W Type BLF6G22-180RN BLF6G22LS-180RN Typ 0.50 0.37 Unit K/W K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.9 mA VDS = 10 V; ID = 270 mA VDS = 28 V; ID = 1.62 A VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 13 V; VDS = 0 V VDS = 10 V; ID = 13.5 A VGS = VGS(th) + 3.75 V; ID = 9.45 A VGS = 0 V; VDS = 30 V; f = 1 MHz Min 65 1.4 1.5 40 Typ 2.0 2.0 45 19.5 0.06 3.3 Max 2.4 2.5 5 450 Unit V V V µA A nA S Ω pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR = 7 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 30 V; IDq = 1400 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol PL(AV) Gp RLin ηD IMD3 ACPR Parameter average output power power gain input return loss drain efficiency third order intermodulation distortion adjacent channel power ratio PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W Conditions Min 15.0 22 Typ Max 40 −11 25 −38 −42 −8 −34.5 −39 16.0 Unit W dB dB % dBc dBc 7.1 Ruggedness in class-AB operation The BLF6G22-180RN and BLF6G22LS-180RN are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 30 V; IDq = 1400 mA; PL = 180 W (CW); f = 2170 MHz. BLF6G22-180RN_22LS-180RN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 20 November 2008 3 of 11 NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor 7.2 One-tone CW 17 Gp (dB) Gp 16 40 001aai641 60 ηD (%) ηD 15 20 14 0 60 120 PL (W) 0 180 VDS = 30 V; IDq = 1400 mA; f = 2140 MHz. Fig 1. One-tone CW power gain and drain efficiency as function of load power; typical values 7.3 Two-tone CW 17 Gp (dB) 16 001aai642 60 ηD (%) 40 −20 IMD (dBc) −30 001aai643 Gp −40 IMD3 15 ηD −50 20 −60 IMD5 IMD7 14 0 60 120 PL(PEP) (W) 0 180 −70 0 20 40 60 80 100 PL(PEP) (W) VDS = 30 V; IDq = 1400 mA; f = 2140 MHz. VDS = 30 V; IDq = 1400 mA; f = 2140 MHz. Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values Fig 3. Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values BLF6G22-180RN_22LS-180RN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 20 November 2008 4 of 11 NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor 7.4 2-carrier W-CDMA 17 Gp (dB) Gp 16 40 −40 ACPR ηD −45 20 −50 001aai644 60 ηD (%) −30 IMD3 ACPR (dBc) −35 IMD3 001aai645 15 14 0 20 40 PL(AV) (W) 60 0 −55 0 20 40 PL(AV) (W) 60 VDS = 30 V; IDq = 1400 mA; f = 2140 MHz (±5 MHz); carrier spacing 10 MHz. VDS = 30 V; IDq = 1400 mA; f = 2140 MHz (±5 MHz); carrier spacing 10 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as function of average load power; typical values 8. Test information VGG C7 C8 R2 C6 VDD C5 C20 C4 R1 C3 C2 C13 C14 C15 C16 C1 C9 C10 C11 input output C12 C17 C18 C19 001aai646 The drawing is not to scale. Fig 6. Test circuit for operation at 2200 MHz BLF6G22-180RN_22LS-180RN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 20 November 2008 5 of 11 NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor R2 C7 C8 C15 C6 C5 C4 R1 C20 C3 C13 C14 C16 C2 C11 C1 C9 C10 C17 C12 C18 C19 001aai647 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Fig 7. Component layout Table 8. List of components (see Figure 6 and Figure 7) The Printed-Circuit Board (PCB) used is a double copper-clad Taconic RF35 with εr = 3.5 and thickness = 0.76 mm. Component C1, C3, C12, C13 C2 C4, C5, C14, C17 C6, C7 C8 C9 C10 C11 C15, C18 C16, C19 C20 L1 R1 R2, R3 [1] Solder vertically. Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor ferrite SMD bead SMD resistor SMD resistor Value 13 pF 1.4 pF 220 nF 100 nF 10 µF 12 pF 1.1 pF 0.7 pF 1.5 µF 10 µF; 50 V 220 µF; 63 V 2.7 Ω 6.8 Ω [1] [1] [1] [1] [1] Remarks ATC 100B or capacitor of same quality ATC 100B or capacitor of same quality Vishay or capacitor of same quality Vishay or capacitor of same quality ATC 100B or capacitor of same quality ATC 100B or capacitor of same quality ATC 100B or capacitor of same quality TDK or capacitor of same quality Ferroxcube BDS 3/3/4.6-4S2 or equivalent BLF6G22-180RN_22LS-180RN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 20 November 2008 6 of 11 NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A 3 D1 F U1 q C B c 1 L H U2 p w1 M A M B M E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 0.067 1.100 0.057 OUTLINE VERSION SOT502A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 Fig 8. Package outline SOT502A © NXP B.V. 2008. All rights reserved. BLF6G22-180RN_22LS-180RN_1 Product data sheet Rev. 01 — 20 November 2008 7 of 11 NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c L 1 H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.067 0.815 0.057 0.805 0.390 0.010 0.380 OUTLINE VERSION SOT502B REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 Fig 9. Package outline SOT502B © NXP B.V. 2008. All rights reserved. BLF6G22-180RN_22LS-180RN_1 Product data sheet Rev. 01 — 20 November 2008 8 of 11 NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor 10. Abbreviations Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Release date 20081120 Data sheet status Product data sheet Change notice Supersedes Document ID BLF6G22-180RN_22LS-180RN_1 BLF6G22-180RN_22LS-180RN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 20 November 2008 9 of 11 NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G22-180RN_22LS-180RN_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 20 November 2008 10 of 11 NXP Semiconductors BLF6G22(LS)-180RN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 November 2008 Document identifier: BLF6G22-180RN_22LS-180RN_1