BLF6G38-100

BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS PL(AV) (V) 28 (W) 18.5 PL(p) Gp (W) 130 13 ηD ACPR885k (dBc) ACPR1980k (dBc) −65[2] (dB) (%) 21.5 −47.5[2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 1050 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 1.3 Applications I RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3600 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF6G38-100 (SOT502A) 1 1 3 2 2 3 sym112 BLF6G38LS-100 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G38-100 BLF6G38LS-100 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 34 +150 200 Unit V V A °C °C BLF6G38-100_6G38LS-100_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 11 November 2008 2 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Type BLF6G38LS-100 Typ 0.58 0.43 Unit K/W K/W Tcase = 80 °C; PL(AV) = 18.5 W BLF6G38-100 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol V(BR)DSS VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs Parameter drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.6 mA VDS = 10 V; ID = 180 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = +11 V; VDS = 0 V VDS = 10 V; ID = 6.3 A VGS = VGS(th) + 3.75 V; ID = 6.3 A VGS =0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 26.5 Typ 2 33 12 0.09 2.6 Max 2.4 5 450 0.15 Unit V V µA A nA S Ω pF 7. Application information Table 7. Application information Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 1050 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol PL(AV) Gp RLin ηD ACPR885k ACPR1980k Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio (885 kHz) adjacent channel power ratio (1980 kHz) [1] Measured within 30 kHz bandwidth. Conditions PL(AV) = 18.5 W PL(AV) = 18.5 W PL(AV) = 18.5 W PL(AV) = 18.5 W PL(AV) = 18.5 W PL(AV) = 18.5 W [1] [1] Min 110 11.5 18.5 - Typ 130 13 −10 21.5 −47.5 −65 Max −45 −63 Unit W dB dB % dBc dBc 7.1 Ruggedness in class-AB operation The BLF6G38-100 and BLF6G38LS-100 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1050 mA; PL = PL(1dB); f = 3600 MHz. BLF6G38-100_6G38LS-100_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 11 November 2008 3 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB. Table 8. Zone 0 Zone 0 Zone 0 Frame structure Modulation technique QPSK1/2 64QAM3/4 64QAM3/4 Data length 3 bit 692 bit 10000 bit FCH data data 2 symbols × 4 subchannels 2 symbols × 26 subchannels 44 symbols × 30 subchannels Frame contents 7.2.2 Graphs 001aaj033 001aaj034 10 EVM (%) 8 18 GP (dB) 16 40 ηD (%) 30 6 14 4 GP 12 2 ηD 10 10−1 0 102 PL(AV) (W) 10 20 0 10−1 1 10 PL (W) 102 1 10 VDS = 28 V; IDq = 1050 mA; f = 3500 MHz. VDS = 28 V; IDq = 1050 mA; f = 3500 MHz. Fig 1. EVM as a function of load power; typical values Fig 2. Power gain and drain efficiency as function of average load power; typical values BLF6G38-100_6G38LS-100_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 11 November 2008 4 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor −25 ACPR (dBc) −35 001aaj036 ACPR10M −45 ACPR20M −55 ACPR30M −65 10−1 1 10 PL(AV) (W) 102 VDS = 28 V; IDq = 1050 mA; f = 3500 MHz. Fig 3. Adjacent channel power ratio as a function of average load power; typical values 7.3 Single carrier NA IS-95 broadband performance at 2 W average 7.3.1 Graphs 001aaj037 001aaj039 16 GP (dB) 14 GP 12 25 ηD (%) 24 −40 ACPR (dBc) −50 ACPR885k (1) (2) 23 10 ηD 8 22 −60 21 ACPR1500k (1) (2) ACPR1980k (2) (1) 6 3400 3450 3500 3550 f (MHz) 20 3600 −70 3400 3440 3480 3520 3560 3600 f (MHz) VDS = 28 V; IDq = 1050 mA; Single Carrier IS-95; PAR = 9.7 dB at 0.01 % probability. VDS = 28 V; IDq = 1050 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as function of frequency; typical values Fig 5. Adjacent channel power ratio as a function of frequency; typical values BLF6G38-100_6G38LS-100_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 11 November 2008 5 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 18 GP (dB) 16 ηD 001aaj041 40 ηD (%) 30 −35 ACPR (dBc) −45 001aaj042 −55 14 20 −65 GP 12 10 −75 ACPR1500k ACPR1980k 10 1 10 PL(AV) (W) 0 102 −85 10−1 ACPR885k (2) (1) (1) (2) (1) (2) 1 10 PL(AV) (W) 102 VDS = 28 V; IDq = 1050 mA; f = 3500 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. VDS = 28 V; IDq = 1050 mA; f = 3500 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as function of load power; typical values 15 001aaj043 Fig 7. Adjacent channel power ratio as a function of load power; typical values 3 001aaj045 GP (dB) 13 (1) (2) (3) Pi (W) 2 (1) (2) (3) 11 1 9 7 10−1 1 10 PL (W) 102 0 10−1 1 10 PL (W) 102 VDS = 28 V; IDq = 1050 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. (1) f = 3400 MHz (2) f = 3500 MHz (3) f = 3600 MHz VDS = 28 V; IDq = 1050 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. (1) f = 3400 MHz (2) f = 3500 MHz (3) f = 3600 MHz Fig 8. Power gain as a function of load power; typical values Fig 9. Input power as a function of load power; typical values BLF6G38-100_6G38LS-100_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 11 November 2008 6 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 8. Test information C9 C6 R1 C3 C4 C8 C5 C7 R3 L1 C10 R2 C1 C2 C11 BLF6G38-100 Input Rev 2 30RF35 NXP PCB1 BLF6G38-100 Output Rev 2 30RF35 NXP PCB2 001aaj048 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit Table 9. List of components For test circuit, see Figure 10. Component C1, C4, C5, C11 C2 C3 C6, C7 C8 C9 C10 L1 R1, R2, R3 Table 10. f (GHz) 3.4 3.5 3.6 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor ferrite SMD bead SMD resistor Measured test circuit impedances Zi (Ω) 0.34 + j3.36 0.52 + j3.86 1.36 + j4.85 Zo (Ω) 0.44 + j3.39 0.56 + j3.91 1.38 + j5.11 Value 10 pF 0.2 pF 4.7 µF; 50 V 100 nF 10 µF; 50V 1.5 µF; 50V 470 µF; 63 V 9.1 Ω SMD 1206 Remarks ATC 100A ATC 100A TDK C4532X7R1H475M Vishay VJ1206Y104KXB TDK C5750X7R1H106M TDK C3225X7R1H155M BLF6G38-100_6G38LS-100_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 11 November 2008 7 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A 3 D1 F U1 q C B c 1 L H U2 p w1 M A M B M E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 0.067 1.100 0.057 OUTLINE VERSION SOT502A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 Fig 11. Package outline SOT502A BLF6G38-100_6G38LS-100_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 11 November 2008 8 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c L 1 H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.067 0.815 0.057 0.805 0.390 0.010 0.380 OUTLINE VERSION SOT502B REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 Fig 12. Package outline SOT502B BLF6G38-100_6G38LS-100_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 11 November 2008 9 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 10. Abbreviations Table 11. Acronym CCDF EVM FCH FFT IBW IS-95 LDMOS LDMOST NA N-CDMA PAR PUSC RF QAM QPSK SMD VSWR WCS WiMAX Abbreviations Description Complementary Cumulative Distribution Function Error Vector Magnitude Frame Control Header Fast Fourier Transform Instantaneous BandWidth Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor North American Narrowband Code Division Multiple Access Peak-to-Average power Ratio Partial Usage SubChannels Radio Frequency Quadrature Amplitude Modulation Quadrature Phase Shift Keying Surface Mounted Device Voltage Standing-Wave Ratio Wireless Communications Service Worldwide Interoperability for Microwave Access 11. Revision history Table 12. Revision history Release date 20081111 Data sheet status Product data sheet Change notice Supersedes Document ID BLF6G38-100_6G38LS-100_1 BLF6G38-100_6G38LS-100_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 11 November 2008 10 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G38-100_6G38LS-100_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 11 November 2008 11 of 12 NXP Semiconductors BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier NA IS-95 broadband performance at 2 W average . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 November 2008 Document identifier: BLF6G38-100_6G38LS-100_1