BLF7G24LS-140,118

BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. VDS PL(AV) D ACPR885k ACPR5M (dB) (%) (dBc) 18.5 26.5 45[1] Mode of operation f IDq Gp (MHz) (mA) (V) (W) IS-95 2300 to 2400 1300 28 30 1 carrier W-CDMA 2300 to 2400 1300 28 50 18.5 33 - (dBc) 35[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at [2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.2 Features and benefits        Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to 2400 MHz frequency range BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G24L-140 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF7G24LS-140 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G24L-140 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF7G24LS-140 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 28 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. BLF7G24L-140_7G24LS-140 Product data sheet Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 125 W 0.28 K/W All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 216 mA 1.5 1.8 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 34 42 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 500 nA gfs forward transconductance VDS = 10 V; ID = 216 mA - 1.87 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.56 A - 69 - m 7. Test information Remark: All testing performed in a class-AB production test circuit. Table 7. Functional test information Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 = 2300 MHz; f2 = 2400 MHz; RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified. Symbol Parameter PL(AV) average output power Conditions - Min Typ Max Unit - W Gp power gain 17.5 18.5 - dB RLin input return loss - 12 - dB D drain efficiency 23 26.5 - % ACPR885k adjacent channel power ratio (885 kHz) - 45 40 dBc 30 7.1 Ruggedness in class-AB operation The BLF7G24L-140 and BLF7G24LS-140 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1300 mA; PL = 140 W (CW); f = 2300 MHz. BLF7G24L-140_7G24LS-140 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor 7.2 Single carrier IS-95 Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz 001aan523 19 001aan524 50 ηD (%) Gp (dB) 40 (1) 18.5 (2) 30 18 (2) (1) 20 17.5 10 0 17 0 20 40 60 80 100 PL (W) 0 VDS = 28 V; IDq = 1300 mA. 20 (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Single carrier IS-95 power gain as a function of load power; typical values 001aan525 −30 APCR855 (dBc) (2) −40 (1) 60 80 100 PL (W) VDS = 28 V; IDq = 1300 mA. (1) f = 2300 MHz Fig 1. 40 Fig 2. Single carrier IS-95 drain efficiency as a function of load power; typical values 001aan526 −40 APCR1980 (dBc) −50 (2) −50 −60 −60 −70 −70 0 20 40 60 80 100 PL (W) −80 VDS = 28 V; IDq = 1300 mA. (1) 0 20 (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Single carrier IS-95 ACPR at 885 kHz as a function of load power; typical values BLF7G24L-140_7G24LS-140 Product data sheet 60 80 100 PL (W) VDS = 28 V; IDq = 1300 mA. (1) f = 2300 MHz Fig 3. 40 Fig 4. Single carrier IS-95 ACPR at 1980 kHz as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor 001aan527 12 001aan528 250 PL(M) (W) PAR (dB) (1) 200 (2) 8 (1) 150 (2) 100 4 50 0 0 0 20 40 60 80 100 PL (W) 0 VDS = 28 V; IDq = 1300 mA. 20 (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values BLF7G24L-140_7G24LS-140 Product data sheet 60 80 100 PL (W) VDS = 28 V; IDq = 1300 mA. (1) f = 2300 MHz Fig 5. 40 Fig 6. Single carrier IS-95 peak power as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor 7.3 Pulsed CW 001aan529 19.5 Gp (dB) 001aan530 50 ηD (%) (2) (1) 40 18.5 (2) (1) 30 17.5 20 10 16.5 0 40 80 120 160 200 PL (W) 0 VDS = 28 V; IDq = 1300 mA. 40 (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Pulsed CW power gain as a function of load power; typical values BLF7G24L-140_7G24LS-140 Product data sheet 120 160 200 PL (W) VDS = 28 V; IDq = 1300 mA. (1) f = 2300 MHz Fig 7. 80 Fig 8. Pulsed CW drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor 7.4 Single carrier W-CDMA 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 001aan531 19 001aan532 50 ηD (%) Gp (dB) (1) 40 (1) 18 (2) (2) 30 17 20 10 16 0 40 80 120 0 40 80 PL (W) VDS = 28 V; IDq = 1300 mA. VDS = 28 V; IDq = 1300 mA. (1) f = 2300 MHz (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 9. 120 PL (W) Single carrier W-CDMA power gain as a function of load power; typical values 001aan533 −20 APCR5M (dBc) Fig 10. Single carrier W-CDMA drain efficiency as a function of load power; typical values 001aan534 −30 APCR10M (dBc) (2) −30 −40 (1) (2) −40 −50 (1) −50 −60 −60 0 40 80 120 −70 0 40 PL (W) VDS = 28 V; IDq = 1300 mA. VDS = 28 V; IDq = 1300 mA. (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a function of load power; typical values Product data sheet 120 PL (W) (1) f = 2300 MHz BLF7G24L-140_7G24LS-140 80 Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor 001aan535 8 001aan536 300 PL(M) (W) PAR (dB) 250 6 200 (1) (1) (2) (2) 150 4 100 50 2 0 40 80 120 0 40 PL (W) VDS = 28 V; IDq = 1300 mA. VDS = 28 V; IDq = 1300 mA. (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values Product data sheet 120 PL (W) (1) f = 2300 MHz BLF7G24L-140_7G24LS-140 80 Fig 14. Single carrier W-CDMA peak output power as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 15. Package outline SOT502A BLF7G24L-140_7G24LS-140 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 16. Package outline SOT502B BLF7G24L-140_7G24LS-140 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 8. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel IS-95 Interim Standard 95 ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G24L-140_7G24LS-140 v.3 20110801 Product data sheet - BLF7G24L-140_7G24LS140 v.2 Modifications: • The status of this data sheet has been changed to Product data sheet BLF7G24L-140_7G24LS-140 v.2 20110405 Preliminary data sheet - BLF7G24L-140_7G24LS140 v.1 BLF7G24L-140_7G24LS-140 v.1 20100805 Objective data sheet - BLF7G24L-140_7G24LS-140 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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All rights reserved. 12 of 14 NXP Semiconductors BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF7G24L-140_7G24LS-140 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 NXP Semiconductors BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 4 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 August 2011 Document identifier: BLF7G24L-140_7G24LS-140