BLF871

BLF871 UHF power LDMOS transistor Rev. 02 — 5 March 2009 Preliminary data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 40 V in a common-source 860 MHz test circuit. Mode of operation CW, class AB 2-tone, class AB DVB-T (8k OFDM) [1] [2] f (MHz) 860 f1 = 860; f2 = 860.1 858 PL PL(PEP) PL(AV) (W) 24 Gp 21 21 22 ηD 60 47 33 IMD3 −35 −34[1] PAR (dB) 8.3[2] (W) (W) 100 100 - (dB) (%) (dBc) Measured [dBc] with delta marker at 4.3 MHz from center frequency. PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: N Peak envelope power load power = 100 W N Power gain = 21 dB N Drain efficiency = 47 % N Third order intermodulation distortion = −35 dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: N Average output power = 24 W N Power gain = 22 dB N Drain efficiency = 33 % N Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency) NXP Semiconductors BLF871 UHF power LDMOS transistor I I I I I I I Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I Communication transmitter applications in the UHF band I Industrial applications in the UHF band 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Name Description BLF871 Version Type number Package flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min −0.5 −65 Max 89 +13 +150 200 Unit V V °C °C BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 2 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) [1] Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL(AV) = 50 W [1] Typ 0.95 Unit K/W Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter VGS(th) IDSS IDSX IGSS RDS(on) Ciss Coss Crss [1] Conditions [1] [1] Min Typ Max 89 1.4 2.4 1.4 140 Unit V µA A nA mΩ pF pF pF V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.12 mA gate-source threshold voltage drain leakage current drain cut-off current gate leakage current VDS = 10 V; ID = 112 mA VGS = 0 V; VDS = 40 V VGS = VGSth + 3.75 V; VDS = 10 V VGS = 10 V; VDS = 0 V 105.5 V 16.7 20 [1] - drain-source on-state resistance VGS = VGSth + 3.75 V; ID = 3.7 A input capacitance output capacitance reverse transfer capacitance VGS = 0 V; VDS = 40 V; f = 1 MHz VGS = 0 V; VDS = 40 V; f = 1 MHz VGS = 0 V; VDS = 40 V; f = 1 MHz - 210 95 30 1 - ID is the drain current. BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 3 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 160 Coss (pF) 120 001aaj276 80 40 0 0 20 40 VDS (V) 60 VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values 7. Application information Table 7. RF performance in a common-source narrowband 860 MHz test circuit Th = 25 °C unless otherwise specified. Mode of operation 2-tone, class AB DVB-T (8k OFDM) [1] [2] f (MHz) f1 = 860; f2 = 860.1 858 VDS IDq (V) 40 40 PL(PEP) PL(AV) (W) 24 Gp ηD IMD3 (dBc) PAR (dB) > 7.8 [2] (A) (W) 0.5 100 0.5 - (dB) (%) > 19 > 44 < −30 > 19 > 30 < −31 [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 4 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 7.1 Narrowband RF figures 7.1.1 CW 001aaj277 24 Gp (dB) 22 Gp 80 ηD (%) 60 ηD 20 40 18 20 16 0 60 120 PL (W) 0 180 VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. Fig 2. CW power gain and drain efficiency as a function of load power; typical values 7.1.2 2-Tone 001aaj278 001aaj279 25 Gp (dB) 23 Gp ηD 80 ηD (%) 60 0 IMD3 (dBc) −20 21 40 −40 19 20 (1) (2) 17 0 40 80 PL(AV) (W) 0 120 −60 0 40 80 PL(AV) (W) 120 VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 3. 2-Tone power gain and drain efficiency as functions of average load power; typical values Fig 4. 2-Tone third order intermodulation distortion as a function of average load power; typical values BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 5 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 7.1.3 DVB-T 001aaj280 001aaj281 24 Gp (dB) 22 Gp 60 ηD (%) 40 −15 IMD3 (dBc) −25 ηD 20 20 −35 −45 (1) (2) 18 0 20 40 PL(AV) (W) 60 0 −55 0 20 40 PL(AV) (W) 60 VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 5. DVB-T power gain and drain efficiency as functions of average load power; typical values Fig 6. DVB-T third order intermodulation distortion as a function of average load power; typical values BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 6 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 7.2 Broadband RF figures 7.2.1 2-Tone 001aaj282 001aaj283 22 Gp (dB) 20 Gp (2) (1) 70 ηD (dB) 60 0 IMD3 (dBc) −20 (2) (1) 18 ηD 16 (2) (1) 50 −40 40 14 400 500 600 700 30 800 900 f (MHz) −60 400 500 600 700 800 900 f (MHz) IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V; PL(AV) = 45 W (2) VDS = 42 V; PL(AV) = 50 W IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V; PL(AV) = 45 W (2) VDS = 42 V; PL(AV) = 50 W Fig 7. 2-Tone power gain and drain efficiency as a function of frequency; typical values Fig 8. 2-Tone third order intermodulation distortion as a function of frequency; typical values BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 7 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 7.2.2 DVB-T 001aaj284 001aaj285 22 Gp (dB) 20 Gp (2) (1) 50 ηD (%) 40 0 IMD3 (dBc) −20 (2) (1) 18 ηD (1) (2) 30 −40 16 400 500 600 700 20 800 900 f (MHz) −60 400 500 600 700 800 900 f (MHz) IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V; PL(AV) = 22 W (2) VDS = 42 V; PL(AV) = 24 W IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V; PL(AV) = 22 W (2) VDS = 42 V; PL(AV) = 24 W Fig 9. DVB-T power gain and drain efficiency as functions of frequency; typical values 9 PAR (dB) 8 Fig 10. DVB-T third order intermodulation distortion as a function of frequency; typical values 001aaj286 (1) (2) 7 (3) (4) 6 5 400 500 600 700 800 900 f (MHz) IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. (1) PAR at 0.01 % probability on the CCDF; VDS = 40 V; PL(AV) = 22 W (2) PAR at 0.01 % probability on the CCDF; VDS = 42 V; PL(AV) = 24 W (3) PAR at 0.1 % probability on the CCDF; VDS = 40 V; PL(AV) = 22 W (4) PAR at 0.1 % probability on the CCDF; VDS = 42 V; PL(AV) = 24 W Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 8 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 7.3 Ruggedness in class-AB operation The BLF871 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 42 V; f = 860 MHz at rated power. 7.4 Impedance information ZL drain Zi gate 001aai086 Fig 12. Definition of transistor impedance Table 8. Typical impedance Simulated Zi and ZL device impedance; impedance info at VDS = 42 V. f MHz 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 BLF871_2 Zi Ω 0.977 − j3.327 0.977 − j2.983 0.978 − j2.681 0.979 − j2.414 0.979 − j2.174 0.980 − j1.956 0.981 − j1.758 0.982 − j1.576 0.982 − j1.407 0.983 − j1.250 0.984 − j1.103 0.985 − j0.964 0.986 − j0.834 0.987 − j0.709 0.988 − j0.591 0.990 − j0.478 0.991 − j0.370 0.992 − j0.266 0.993 − j0.165 0.995 − j0.068 0.996 + j0.026 0.997 + j0.117 0.999 + j0.206 1.000 + j0.292 1.002 + j0.376 ZL Ω 5.506 + j1.774 5.366 + j1.858 5.223 + j1.930 5.078 + j1.990 4.932 + j2.040 4.786 + j2.079 4.640 + j2.108 4.495 + j2.128 4.352 + j2.138 4.212 + j2.140 4.074 + j2.135 3.940 + j2.122 3.809 + j2.102 3.682 + j2.077 3.558 + j2.045 3.438 + j2.009 3.323 + j1.968 3.211 + j1.923 3.103 + j1.874 3.000 + j1.822 2.900 + j1.766 2.804 + j1.708 2.711 + j1.648 2.623 + j1.586 2.538 + j1.521 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 9 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor Table 8. Typical impedance …continued Simulated Zi and ZL device impedance; impedance info at VDS = 42 V. f MHz 925 950 975 1000 Zi Ω 1.004 + j0.459 1.005 + j0.540 1.007 + j0.619 1.009 + j0.696 ZL Ω 2.456 + j2.455 2.378 + j2.388 2.303 + j2.320 2.230 + j2.250 7.5 Reliability 105 Years (1) (2) (3) (4) (5) (6) 001aaj287 104 103 102 10 (7) (8) (9) (10) (11) 1 0 2 4 IDS(DC) (A) 6 TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 13. BLF871 electromigration (IDS(DC)) BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 10 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 8. Test information Table 9. List of components For test circuit, see Figure 14, Figure 15 and Figure 16. Component C1, C2 C3, C4 C5 C6 C7 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Value 5.1 pF 10 pF 6.8 pF 4.7 pF 2.7 pF 100 pF 10 µF 470 µF; 63 V 10 pF 8.2 pF 0.6 pF to 4.5 pF 6.8 pF 3.9 pF 100 Ω 10 kΩ [3] [3] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [3] [3] [1] [2] [1] [1] [1] [1] Remarks C8, C9, C10, C25, multilayer ceramic chip capacitor C26 C11, C27 C12 C20 C21 C22 C23 C24 L1 L2 L3 L4 L5 L6 L7 L20 L21 L22 L23 R1 R2 [1] [2] [3] [4] multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor trimmer multilayer ceramic chip capacitor multilayer ceramic chip capacitor stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline resistor resistor TDK C570X7R1H106KT000N or capacitor of same quality. Tekelec (W × L) 7 mm × 15 mm (W × L) 2.4 mm × 9 mm (W × L) 2.4 mm × 10 mm (W × L) 2.4 mm × 25 mm (W × L) 2.4 mm × 10 mm (W × L) 2.0 mm × 20 mm (W × L) 2.0 mm × 21 mm (W × L) 7 mm × 12 mm (W × L) 2.4 mm × 13 mm (W × L) 2.4 mm × 31 mm (W × L) 2.4 mm × 5 mm American technical ceramics type 100B or capacitor of same quality. American technical ceramics type 180R or capacitor of same quality. American technical ceramics type 100A or capacitor of same quality. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 11 of 18 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Preliminary data sheet Rev. 02 — 5 March 2009 © NXP B.V. 2009. All rights reserved. BLF871_2 NXP Semiconductors VGG R2 C11 C27 C12 VDD C26 C9 R1 L6 C20 C1 C3 C8 50 Ω C25 L23 L22 L21 L20 L1 L2 L3 L4 L5 50 Ω C24 C23 C22 C21 C2 L7 C4 C5 C6 C7 C10 001aaj288 See Table 9 for a list of components. Fig 14. Class-AB common-source broadband amplifier UHF power LDMOS transistor BLF871 12 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 76.2 mm 40 mm 40 mm 001aaj289 Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 13 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor R2 C11 C9 C12 C27 L6 C26 R1 C1 C20 C25 L23 L21 C24 C22 C21 C5 C2 C23 C4 L3 L5 C6 L23 C7 C8 L20 L1 L2 C3 L7 C10 L4 001aaj290 See Table 9 for a list of components. Fig 16. Component layout for class-AB common source amplifier BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 14 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 q C B c 1 E1 H U2 E A p w1 M A M B M 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 b 5.59 5.33 c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 0.233 0.227 E1 5.97 5.72 F 1.65 1.40 H 18.54 17.02 0.73 0.67 p 3.43 3.18 Q 2.21 1.96 q 14.27 U1 20.45 20.19 U2 5.97 5.72 w1 0.25 w2 0.51 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.235 0.065 0.225 0.055 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION SOT467C REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-06 99-12-28 Fig 17. Package outline SOT467C BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 15 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 10. Abbreviations Table 10. Acronym CW CCDF DVB DVB-T ESD HF IMD3 LDMOS LDMOST OFDM PAR PEP RF TTF UHF VSWR Abbreviations Description Continuous Wave Complementary Cumulative Distribution Function Digital Video Broadcast Digital Video Broadcast - Terrestrial ElectroStatic Discharge High Frequency Third order InterModulation Distortion Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Orthogonal Frequency Division Multiplexing Peak-to-Average power Ratio Peak Envelope Power Radio Frequency Time To Failure Ultra High Frequency Voltage Standing-Wave Ratio 11. Revision history Table 11. BLF871_2 Modifications: Revision history Release date 20090305 Data sheet status Preliminary data sheet Change notice Supersedes BLF871_1 Document ID • • • • • Table 1 on page 1: corrected some values Section 1.2 on page 1: corrected some values Table 6 on page 3: corrected some values Table 6 on page 3: removed gfs specification Table 7 on page 4: corrected some values. Objective data sheet - BLF871_1 20081218 BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 16 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 17 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.1.1 7.1.2 7.1.3 7.2 7.2.1 7.2.2 7.3 7.4 7.5 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Narrowband RF figures. . . . . . . . . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Broadband RF figures. . . . . . . . . . . . . . . . . . . . 7 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ruggedness in class-AB operation. . . . . . . . . . 9 Impedance information . . . . . . . . . . . . . . . . . . . 9 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 March 2009 Document identifier: BLF871_2