BLF872

BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efficiency ηD = 43 % x Third order intermodulation distortion IMD3 = −28 dBc s Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Average output power PL(AV) = 70 W x Gain Gp = 15 dB x Drain efficiency ηD = 30 % x Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center frequency) s Advanced flange material for optimum thermal behavior and reliability s Excellent ruggedness s High power gain s Designed for broadband operation (UHF band) s Excellent reliability s Internal input and output matching for high gain and optimum broadband operation s Source on underside eliminates DC isolators, reducing common-mode inductance s Easy power control Philips Semiconductors BLF872 UHF power LDMOS transistor 1.3 Applications s Communication transmitter applications in the UHF band s Industrial applications in the UHF band 1.4 Quick reference data Table 1: Quick reference data Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source narrowband 860 MHz test circuit. [1] Mode of operation CW, class AB 2-tone, class AB PAL BG DVB-T (8K OFDM) [1] [2] [3] f (MHz) 860 f1 = 860; f2 = 860.1 860 (ch69) 858 PL (W) 300 - PL(PEP) PL(AV) (W) (W) 300 70 Gp (dB) 14 15 15 15 ηD (%) 55 42 42 30 IMD3 (dBc) −28 −28 [3] 300 (peak sync.) [2] - Th is the heatsink temperature. Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %. Measured dBc at 4.3 MHz from center frequency. 2. Pinning information Table 2: drain 1 drain 2 gate 1 gate 2 source [1] Connected to flange. Pinning Pin 1 2 3 4 5 [1] Description Simplified outline 1 2 5 3 4 3. Ordering information Table 3: Ordering information Package Name BLF872 Description Version flanged LDMOST ceramic package; 2 mounting holes; 4 SOT800-1 leads Type number BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 2 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min −65 Max 65 ±13 +150 200 Unit V V °C °C 5. Thermal characteristics Table 5: Symbol Rth(j-c) Rth(j-h) [1] [2] Thermal characteristics Parameter thermal resistance from junction to case thermal resistance from junction to heatsink Conditions Th = 25 °C Th = 25 °C [1] [1] [2] Typ 0.32 0.4 Unit K/W K/W Th is the heatsink temperature. Rth(j-h) is dependent on the applied thermal compound and clamping/mounting of the device. 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified. Symbol V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss [1] [2] Parameter drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance Conditions [1] VGS = 0 V; ID = 5 mA VDS = 20 V; ID = 250 mA VGS = 0 V; VDS = 32 V VGS = VGSth + 6 V; VDS = 10 V VGS = 10 V; VDS = 0 V VGS = 20 V; ID = 16 A VGS = VGSth + 6 V; ID = 9 A VGS = 0 V; VDS = 32 V; f = 1 MHz VGS = 0 V; VDS = 32 V; f = 1 MHz VGS = 0 V; VDS = 32 V; f = 1 MHz [2] [2] [2] Min 65 5.2 - Typ 41 10 80 200 70 2.5 Max 6.2 2.2 40 - Unit V V µA A nA S mΩ pF pF pF ID is the drain current. Capacitance values without internal matching. BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 3 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 200 Coss (pF) 150 001aad743 100 50 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance Coss as a function of drain-source voltage VDS; typical values per section; capacitance value without internal matching 7. Application information Table 7: RF performance in a common-source 860 MHz narrowband test circuit Th = 25 °C unless otherwise specified. [1] Mode of operation 2-tone, class AB DVB-T (8K OFDM) [1] f (MHz) f1 = 860; f2 = 860.1 858 VDS (V) 32 32 IDq (A) 2 × 0.9 2 × 0.9 PL(PEP) (W) 300 - PL(AV) (W) 70 Gp (dB) > 14 > 14 ηD (%) > 40 > 26 IMD3 (dBc) ≤ −25 ≤ −25 ∆Gp (dB) ≤1 - Sync. compression: input sync. ≥ 33 %, output sync. 27 %. BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 4 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 16 Gp (dB) 14 Gp 001aad744 60 ηD, ηadd (%) ηD ηadd 40 12 20 10 0 100 200 300 PL (W) 0 400 VDS = 32 V; f = 860 MHz; IDq = 2 × 0.9 A; Th = 25 °C. Fig 2. CW power gain Gp, drain efficiency ηD and power added efficiency ηadd as a function of output power PL; typical values 16 Gp (dB) 14 IMD3 001aad745 0 IMD (dBc) −20 16 Gp (dB) 14 001aad746 60 ηD, ηadd (%) 40 Gp Gp ηD ηadd 12 IMD5 −40 12 20 10 0 50 100 150 −60 200 250 PL(AV) (W) 10 0 50 100 150 0 200 250 PL(AV) (W) VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz; IDq = 2 × 0.9 A; Th = 25 °C. VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz; IDq = 2 × 0.9 A; Th = 25 °C. Fig 3. 2-tone power gain Gp and intermodulation distortion IMD as a function of average output power PL(AV); typical values Fig 4. 2-tone power gain Gp, drain efficiency ηD and power added efficiency ηadd as a function of average output power PL(AV); typical values BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 5 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 20 Gp (dB) 16 Gp 001aad748 0 IMD (dBc) −10 20 Gp (dB) 16 Gp ηadd 001aad747 50 ηD, ηadd (%) 40 12 IMD3HI 8 IMD3LO 4 −20 12 ηD 30 −30 8 20 −40 4 10 0 0 40 80 −50 120 160 PL(AV) (W) 0 0 40 80 0 120 160 PL(AV) (W) IMD at ±4.3 MHz from frequency center. VDS = 32 V; f = 858 MHz; IDq = 2 × 0.9 A; Th = 25 °C. Fig 5. DVB-T (8K OFDM) power gain Gp and third order intermodulation distortion (high-frequency component IMD3HI and low-frequency component IMD3LO) as a function of average output power PL(AV); typical values Fig 6. DVB-T (8K OFDM) power gain Gp, drain efficiency ηD and power added efficiency ηadd as a function of average output power PL(AV); typical values BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 6 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 7.1 Broadband operation data Measured in a common-source broadband (470 MHz to 860 MHz) test circuit. 300 P (W) 200 001aad749 20 Gp (dB) 15 Gp 001aad750 80 ηD (%) 60 Po(sync)M ηD 10 PL(AV) 100 5 20 40 0 400 500 600 700 800 900 f (MHz) 0 400 500 600 700 0 800 900 f (MHz) VDS = 32 V; IDq = 2 × 0.9 A; Th = 25 °C. Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %. VDS = 32 V; IDq = 2 × 0.9 A; Th = 25 °C. Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %. Fig 7. Analog TV (black video signal) peak sync output power Po(sync)M and average output power PL(AV) as a function of frequency f Fig 8. Analog TV (black video signal) power gain Gp and drain efficiency ηD as a function of frequency f 7.2 Ruggedness in class-AB operation The BLF872 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated power. Measured in a common-source broadband (470 MHz to 860 MHz) test circuit. BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 7 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 7.3 Reliability 107 Years 106 (1) (2) (3) (4) (5) (6) 001aad751 105 104 103 102 (7) (8) (9) (10) (11) 10 0 4 8 12 16 ID (A) 20 TTF; 0.1 % failure fraction; best estimate values. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 9. BLF872 electromigration (ID, total device) 8. Test information Table 8: List of components For test circuit, see Figure 10, 11 and 12. Component B1, B2 balun C1 C2 C3, C5 C4 C6, C7 C8 C9, C10 C11, C12 C13, C14 BLF872_1 Description semi rigid coax multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Value 25 Ω 12 pF 10 pF 5.6 pF 6.8 pF 2.0 pF 18 pF 0.5 pF 100 pF 100 pF [1] [1] [1] [1] [2] [1] [2] [1] [2] Remarks EZ90-25-TP © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 8 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor Table 8: List of components …continued For test circuit, see Figure 10, 11 and 12. Component C15, C16 C17, C18 C20 C21 C22 C23 C24, C32 C25 C26, C27 C28, C29 C30, C31 L1 L2 L3 L4 L5 L6 L10 L11 L12 L13 R1 R2 R3 R4 R5 R6 [1] [2] [3] [4] Description ceramic capacitor electrolytic capacitor multilayer ceramic chip capacitor tekelec trimmer multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ceramic capacitor electrolytic capacitor stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline resistor resistor resistor resistor potentiometer potentiometer Value 15 nF 470 µF 13 pF 0.6 pF to 4.5 pF 3.9 pF 10 pF 3.0 pF 30 pF 100 pF 15 nF 10 µF [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [3] [3] [3] [3] [3] [3] Remarks (W × L) 24 mm × 13.1 mm (W × L) 10 mm × 17.7 mm (W × L) 5 mm × 16.5 mm (W × L) 2.4 mm × 15 mm (W × L) 3.5 mm × 43 mm (W × L) 2 mm × 43.3 mm (W × L) 24 mm × 10 mm (W × L) 10 mm × 15 mm (W × L) 3 mm × 31.5 mm (W × L) 2 mm × 43.3 mm 5.6 Ω 5.6 Ω 100 Ω 100 Ω 2 kΩ 2 kΩ American technical ceramics type 180R or capacitor of same quality. American technical ceramics type 100B or capacitor of same quality. American technical ceramics type 100A or capacitor of same quality. PCB: Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 9 of 16 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Product data sheet Rev. 01 — 20 February 2006 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BLF872_1 Philips Semiconductors +VG1(test) C30 L5 C9 R5 L10 L1 C13 R3 C28 L11 R1 C24 C26 L13 L12 L2 L3 C6 L6 L4 B2 C23 C22 C21 C20 C1 C2 C3 C4 C5 B1 C11 C15 C17 +VD1(test) 50 Ω C25 C8 50 Ω L13 R2 C29 C27 C32 L12 L3 L11 L2 C7 L6 C12 +VD2(test) C14 C16 C18 R4 L10 R6 C31 L1 C10 UHF power LDMOS transistor +VG2(test) L5 001aad752 BLF872 10 of 16 Fig 10. Class-AB common-source broadband test circuit; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Product data sheet Rev. 01 — 20 February 2006 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BLF872_1 Philips Semiconductors 80 mm 95 mm 95 mm 001aad753 UHF power LDMOS transistor BLF872 Fig 11. Printed-circuit board for class-AB broadband test circuit 11 of 16 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Product data sheet Rev. 01 — 20 February 2006 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BLF872_1 Philips Semiconductors 32 mm + C30 +VG1(test) 15 mm R5 L5 +VD1(test) C9 C15 C13 C17 + L6 R3 C28 R1 L13 B2 L11 L2 L3 L12 C26 C25 C27 C24 C32 L12 L3 C23 C22 C21 C20 C1 C3 C4 C2 C5 C11 C6 C7 C12 L10 L1 13.1 mm strip (+32 V supply) L4 C8 BLF872 10 mm L13 R2 C29 R4 L11 1.5 mm L2 3.5 mm B1 broadband BLF872 input L10 L1 L6 R6 C14 C18 + 15 mm C31 C10 L5 C16 Fig 12. Component layout for class-AB broadband test circuit + +VG2(test) +VD2(test) 32 mm 001aad833 UHF power LDMOS transistor BLF872 12 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT800-1 D A F y D1 U1 q B C c w1 M A M 1 2 B M H U2 P E1 E 5 L A 3 4 b e w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.6 6.2 b 10.55 10.45 c 0.15 0.10 D 30.5 29.9 D1 31.1 30.9 E 14.6 14.4 E1 15.3 15.1 e 12.7 0.5 F 2.26 2.00 H 22.8 21.8 L 3.7 3.3 p 3.56 3.49 Q 3.4 3.1 q 38.5 U1 44.5 44.2 U2 15.4 15.0 w1 0.25 0.01 w2 0.25 0.01 y 0.05 0.002 0.260 0.415 0.006 1.201 1.224 0.575 0.602 0.244 0.411 0.004 1.177 1.216 0.567 0.594 0.089 0.898 0.146 0.140 0.134 1.752 0.606 1.516 0.079 0.858 0.130 0.137 0.122 1.740 0.591 EUROPEAN PROJECTION OUTLINE VERSION SOT800-1 REFERENCES IEC JEDEC JEITA ISSUE DATE 05-06-02 05-06-07 Fig 13. Package outline SOT800-1 BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 13 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 10. Abbreviations Table 9: Acronym CDMA CW DVB EDGE ESR EVM GSM IMD LDMOS OFDM PCB PEP RF SMD TTF VSWR Abbreviations Description Code Division Multiple Access Continuous Wave Digital Video Broadcast Enhanced Data rates for GSM Evolution Equivalent Series Resistance Error Vector Magnitude Global System for Mobile communications InterModulation Distortion Laterally Diffused Metal Oxide Semiconductor Orthogonal Frequency Division Multiplexing Printed-Circuit Board Peak Envelope Power Radio Frequency Surface Mount Device Time To Failure Voltage Standing Wave Ratio 11. Revision history Table 10: BLF872_1 Revision history Release date 20060220 Data sheet status Product data sheet Change notice Doc. number Supersedes Document ID BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 14 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 15 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 7.1 7.2 7.3 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Broadband operation data . . . . . . . . . . . . . . . . 7 Ruggedness in class-AB operation. . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 February 2006 Document number: BLF872_1 Published in The Netherlands