BLF878,112

BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 42 V in a common-source 860 MHz narrowband test circuit. Mode of operation f PL PL(PEP) PL(AV) Gp (MHz) (W) (W) CW, class AB 860 300 2-Tone, class AB f1 = 860; f2 = 860.1 - PAL BG 860 (ch69) 300 (peak sync.) DVB-T (8k OFDM) 858 - [1] (W) ηD IMD3 (dB) (%) (dBc) - - 21 60 - 300 - 21 46 −35 - - 21 45 - - 75 21 32 −32 [2] [1] Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %. [2] Measured [dBc] with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: u Peak envelope power load power = 300 W u Power gain = 21 dB u Drain efficiency = 46 % u Third order intermodulation distortion = −35 dBc n DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: u Average output power = 75 W u Power gain = 21 dB u Drain efficiency = 32 % u Third order intermodulation distortion = −32 dBc (4.3 MHz from center frequency) BLF878 NXP Semiconductors UHF power LDMOS transistor n n n n n n n n n n Integrated ESD protection Advanced flange material for optimum thermal behavior and reliability Excellent ruggedness High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Excellent reliability Internal input and output matching for high gain and optimum broadband operation Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n Communication transmitter applications in the UHF band n Industrial applications in the UHF band 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 2 1 5 3 3 [1] source 5 4 4 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLF878 - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A BLF878_2 Product data sheet Version © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 2 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 89 V VGS gate-source voltage −0.5 +11 V Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-c) thermal resistance from junction to case Tcase = 80 °C; PL(AV) = 150 W Rth(c-h) thermal resistance from case to heatsink Typ Unit [1] 0.23 K/W [2] 0.15 K/W [1] Rth(j-c) is measured under RF conditions. [2] Rth(c-h) is dependent on the applied thermal compound and clamping/mounting of the device. 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.25 mA Unit 89 - 105.5 V [1] 1.4 1.9 2.4 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 225 mA IDSS drain leakage current VGS = 0 V; VDS = 42 V - - 1.4 µA IDSX drain cut-off current VGS = VGSth + 3.75 V; VDS = 10 V 35 39 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V 140 nA forward transconductance gfs VDS = 10 V; ID = 11.2 A - - [1] - 15.5 - S - 110 - mΩ RDS(on) drain-source on-state resistance VGS = VGSth + 3.75 V; ID = 7.6 A [1] Ciss input capacitance VGS = 0 V; VDS = 40 V; f = 1 MHz [2] - 190 - pF Coss output capacitance VGS = 0 V; VDS = 40 V; f = 1 MHz [2] - 60 - pF Crss reverse transfer capacitance VGS = 0 V; VDS = 40 V; f = 1 MHz [2] - 2 - pF [1] ID is the drain current. [2] Capacitance values without internal matching. BLF878_2 Product data sheet Min Typ Max [1] © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 3 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 001aai075 350 Coss (pF) 250 150 50 0 20 40 60 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section; capacitance value without internal matching 7. Application information Table 7. RF performance in a common-source narrowband 860 MHz test circuit Tcase = 25 °C unless otherwise specified. Mode of operation f 2-Tone, class AB DVB-T (8k OFDM) 858 PL(PEP) PL(AV) Gp (MHz) (V) (A) (W) (W) (dB) (%) f1 = 860; f2 = 860.1 40 1.4[1] 300 - > 18 > 42 < −31 40 1.4[1] - 75 > 18 > 29 < −29 [2] [1] IDq = 1.4 A for total device. [2] Measured [dBc] with delta marker at 4.3 MHz from center frequency. BLF878_2 Product data sheet ηD VDS IDq IMD3 (dBc) © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 4 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 7.1 Narrowband RF figures 7.1.1 CW 001aai076 24 Gp (dB) 80 ηD (%) (2) (1) 22 60 Gp (2) 20 ηD 40 (1) 18 20 16 0 100 200 0 400 300 PL (W) IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V Fig 2. CW power gain and drain efficiency as a function of load power; typical values BLF878_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 5 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 7.1.2 2-Tone 001aai077 22 Gp Gp (dB) 60 (1) ηD (%) (2) 001aai078 −10 IMD3 (dBc) −20 20 (2) ηD 40 (1) −30 (1) (2) 20 18 −40 16 0 100 200 0 300 400 PL(AV) (W) −50 0 IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. 100 (1) VDS = 40 V (2) VDS = 42 V (2) VDS = 42 V 2-Tone power gain and drain efficiency as functions of average load power; typical values Fig 4. 2-Tone third order intermodulation distortion as a function of average load power; typical values BLF878_2 Product data sheet 300 400 PL(AV) (W) IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V Fig 3. 200 © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 6 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 7.1.3 DVB-T 001aai079 23 Gp (dB) 60 ηD (%) (2) (1) Gp 21 001aai080 −15 IMD3 (dBc) 40 −25 20 −35 (1) (2) ηD 19 (1) (2) 17 0 50 100 150 0 200 250 PL(AV) (W) −45 0 IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. 50 (1) VDS = 40 V (2) VDS = 42 V (2) VDS = 42 V DVB-T power gain and drain efficiency as functions of average load power; typical values Fig 6. 200 250 PL(AV) (W) DVB-T third order intermodulation distortion as a function of average load power; typical values BLF878_2 Product data sheet 150 IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V Fig 5. 100 © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 7 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 7.2 Broadband RF figures 7.2.1 2-Tone 001aai081 22 Gp (dB) (2) (1) Gp 18 80 ηD (%) 60 14 −20 (1) (2) 40 500 IMD3 (dBc) (1) (2) ηD 10 400 001aai082 0 600 700 20 800 900 f (MHz) −40 −60 400 PL(AV) = 150 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8. 500 (1) VDS = 40 V (2) VDS = 42 V (2) VDS = 42 V 2-Tone power gain and drain efficiency as a function of frequency; typical values Fig 8. 800 900 f (MHz) 2-Tone third order intermodulation distortion as a function of frequency; typical values BLF878_2 Product data sheet 700 PL(AV) = 150 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V Fig 7. 600 © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 8 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 7.2.2 DVB-T 001aai083 22 60 ηD (%) (2) (1) Gp (dB) Gp 18 IMD3 (dBc) −20 40 (1) (2) ηD (1) (2) −40 20 14 10 400 500 600 001aai084 0 −60 400 0 800 900 f (MHz) 700 PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8. 500 (1) VDS = 40 V (2) VDS = 42 V (2) VDS = 42 V DVB-T power gain and drain efficiency as functions of frequency; typical values 700 800 900 f (MHz) PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V Fig 9. 600 Fig 10. DVB-T third order intermodulation distortion as a function of frequency; typical values 001aai085 10 PAR (dB) 9 (2) (1) 8 7 6 5 400 500 600 700 800 900 f (MHz) PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8. PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. (1) VDS = 40 V (2) VDS = 42 V Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values BLF878_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 9 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 7.3 Ruggedness in class-AB operation The BLF878 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 42 V; f = 860 MHz at rated power. 7.4 Impedance information ZL drain Zi gate 001aai086 Fig 12. Definition of transistor impedance Table 8. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W. f Zi ZL MHz Ω Ω 300 0.933 − j1.376 6.431 − j4.296 325 0.959 − j0.986 6.889 − j3.911 350 0.988 − j0.628 7.237 − j3.476 375 1.020 − j0.295 7.475 − j3.017 400 1.057 + j0.017 7.610 − j2.559 425 1.097 + j0.314 7.652 − j2.120 450 1.143 + j0.598 7.614 − j1.713 475 1.194 + j0.871 7.512 − j1.348 500 1.251 + j1.137 7.359 − j1.031 525 1.315 + j1.397 7.168 − j0.762 550 1.388 + j1.652 6.949 − j0.542 575 1.470 + j1.903 6.712 − j0.368 600 1.563 + j2.152 6.465 − j0.237 625 1.668 + j2.398 6.214 − j0.145 650 1.788 + j2.642 5.962 − j0.089 675 1.925 + j2.885 5.714 − j0.064 700 2.082 + j3.125 5.472 − j0.066 725 2.262 + j3.362 5.238 − j0.093 750 2.470 + j3.594 5.012 − j0.141 775 2.711 + j3.816 4.796 − j0.207 800 2.989 + j4.025 4.590 − j0.289 825 3.310 + j4.213 4.394 − j0.385 850 3.680 + j4.369 4.208 − j0.493 875 4.103 + j4.478 4.031 − j0.611 900 4.580 + j4.519 3.864 − j0.737 BLF878_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 10 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor Table 8. Typical push-pull impedance …continued Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W. f Zi ZL MHz Ω Ω 925 5.103 + j4.467 3.706 − j0.871 950 5.656 + j4.291 3.556 − j1.011 975 6.205 + j3.963 3.415 − j1.157 1000 6.696 + j3.463 3.281 − j1.308 7.5 Reliability 001aai087 106 Years 105 104 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) 103 102 10 1 0 4 8 12 16 20 24 IDS(DC) (A) TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 13. BLF878 electromigration (IDS(DC), total device) BLF878_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 11 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 8. Test information Table 9. List of components For test circuit, see Figure 14, Figure 15 and Figure 16. Component Description Value B1, B2 semi rigid coax 25 Ω; 43.5 mm Remarks EZ90-25-TP C1, C2 multilayer ceramic chip capacitor 8.2 pF [1] C3, C9 multilayer ceramic chip capacitor 3.9 pF [2] C4 multilayer ceramic chip capacitor 2.7 pF [2] C5, C7, C8 multilayer ceramic chip capacitor 6.8 pF [1] C6 multilayer ceramic chip capacitor 2.2 pF [2] C10 multilayer ceramic chip capacitor 47 pF [2] C11, C12 multilayer ceramic chip capacitor 100 pF [1] C13, C14 multilayer ceramic chip capacitor 100 pF [2] C15, C16 multilayer ceramic chip capacitor 10 µF C17, C18 electrolytic capacitor 470 µF; 63 V C20 multilayer ceramic chip capacitor 15 pF C21 trimmer 0.6 pF to 4.5 pF C22 multilayer ceramic chip capacitor 11 pF [3] C23 multilayer ceramic chip capacitor 3.9 pF [3] C24 multilayer ceramic chip capacitor 4.7 pF [3] C25, C26, C27 multilayer ceramic chip capacitor 100 pF [3] C28, C29 multilayer ceramic chip capacitor 560 pF [2] C30, C31 electrolytic capacitor 10 µF L1 stripline - [4] (W × L) 24 mm × 13 mm (W × L) 15 mm × 24.5 mm TDK C570X7R1H106KT000N or capacitor of same quality. [3] Tekelec L2 stripline - [4] L3 stripline - [4] (W × L) 5 mm × 21 mm - [4] (W × L) 2.4 mm × 6 mm - [4] (W × L) 2 mm × 43.5 mm (W × L) 2 mm × 4.5 mm L4 stripline L5, L23 stripline L6 stripline - [4] L7 stripline - [4] (W × L) 5.5 mm × 24 mm - [4] (W × L) 15 mm × 5 mm - [4] (W × L) 3 mm × 39 mm [4] (W × L) 2.4 mm × 5.7 mm L20 stripline L21 stripline L22 stripline - R1, R2 resistor 5.6 Ω R3, R4 potentiometer 10 kΩ R5, R6 resistor 10 kΩ R7, R8 resistor 1 kΩ long wires [1] American technical ceramics type 180R or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. [4] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. BLF878_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 12 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor + VG1(test) R7 R3 C13 + VD1(test) R5 C15 C17 C30 C28 R1 50 Ω C25 C8 C5 C6 C9 C26 C24 L22 C22 C21 C20 C3 C4 C1 C2 C11 L4 C10 B2 C29 R2 C27 50 Ω B1 L21 L23 L3 L5 C7 L2 L20 C31 C12 L1 L6 R6 L7 + VD2(test) C14 R4 C16 C18 R6 + VG2(test) 001aai088 See Table 9 for a list of components. Fig 14. Class-AB common-source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages L7 L6 L20 L23 L5 L1 L2 L3 L21 L22 80 mm 95 mm 95 mm 001aai089 Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF878_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 13 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor C13 +VG1(test) +VD1(test) C15 C17 R7 4 mm C28 C26 C25 C27 R2 C23 C24 C8 C21 C22 BLF878 C30 R1 C4 C2 C1 C5 C6 C9 C3 C10 C12 7 mm C20 R4 B2 R8 C11 C7 C31 R6 B1 18 mm R3 R5 3.6 mm 12 mm C29 C18 C14 +VG2(test) C16 +VD2(test) 12 mm 22 mm 001aai090 See Table 9 for a list of components. Fig 16. Component layout for class-AB common source amplifier BLF878_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 14 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A D A F D1 U1 B q C H1 1 H 2 w2 C w1 A c B p U2 E E1 5 L 3 4 A w3 b Q e w3 0.25 0 5 10 mm scale 0.010 Dimensions Unit(1) mm A b c D D1 E E1 e F H H1 L max 5.77 11.81 0.15 31.55 31.37 10.29 10.29 1.969 17.50 25.53 3.86 nom 13.72 min 4.80 11.56 0.10 30.94 31.12 10.03 10.03 1.689 17.25 25.27 3.35 p Q q 3.30 3.02 U1 U2 w2 0.25 0.51 41.28 10.29 35.56 3.05 w1 2.77 41.02 10.03 max 0.227 0.465 0.006 1.242 1.235 0.405 0.405 0.078 0.689 1.005 0.152 0.130 0.119 1.625 0.405 0.540 1.400 0.010 0.020 inches nom min 0.189 0.455 0.004 1.218 1.225 0.395 0.395 0.067 0.679 0.995 0.132 0.120 0.109 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot979a_po European projection Issue date 08-04-24 08-09-04 SOT979A Fig 17. Package outline SOT979A BLF878_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 15 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave CCDF Complementary Cumulative Distribution Function DVB Digital Video Broadcast DVB-T Digital Video Broadcast - Terrestrial ESD ElectroStatic Discharge IMD3 Third order InterModulation Distortion LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor OFDM Orthogonal Frequency Division Multiplexing PAL Phase Alternating Line PAR Peak-to-Average power Ratio PEP Peak Envelope Power RF Radio Frequency TTF Time To Failure UHF Ultra High Frequency VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF878_2 20090615 Product data sheet - BLF878_1 - - Modifications: BLF878_1 • • • Table 4 on page 3: changed maximum value of VGS. Table 6 on page 3: changed several values. Table 7 on page 4: removed PAR specification. 20081215 Preliminary data sheet BLF878_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 16 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF878_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 17 of 18 BLF878 NXP Semiconductors UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.1.1 7.1.2 7.1.3 7.2 7.2.1 7.2.2 7.3 7.4 7.5 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Narrowband RF figures. . . . . . . . . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Broadband RF figures. . . . . . . . . . . . . . . . . . . . 8 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Ruggedness in class-AB operation. . . . . . . . . 10 Impedance information . . . . . . . . . . . . . . . . . . 10 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Test information . . . . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 June 2009 Document identifier: BLF878_2