BLF881S

BLF881; BLF881S UHF power LDMOS transistor Rev. 02 — 10 February 2010 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 50 V in a common-source 860 MHz test circuit. Mode of operation 2-tone, class AB DVB-T (8k OFDM) [1] f (MHz) f1 = 860; f2 = 860.1 858 PL - PL(PEP) 140 - PL(AV) Gp (W) 33 21 21 ηD 49 34 IMD3 −34 - IMDshldr (dBc) −33[1] (W) (W) (dB) (%) (dBc) Measured [dBc] with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 140 W Power gain = 21 dB Drain efficiency = 49 % Third order intermodulation distortion = −34 dBc DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Average output power = 33 W Power gain = 21 dB Drain efficiency = 34 % Shoulder distance = −33 dBc (4.3 MHz from center frequency) Integrated ESD protection Excellent ruggedness High power gain NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF881 (SOT467C) 1 3 2 2 3 sym112 1 BLF881S (SOT467B) 1 2 3 drain gate source [1] 1 3 2 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Name Description BLF881 BLF881S earless LDMOST ceramic package; 2 leads Version SOT467B Type number Package flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 2 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min −0.5 −65 Max 104 +13 +150 200 Unit V V °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-c) [1] Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL(AV) = 70 W [1] Typ 0.95 Unit K/W Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. DC characteristics Tj = 25 °C unless otherwise specified. Symbol V(BR)DSS VGS(th) IDSS IDSX IGSS RDS(on) Ciss Coss Crss [1] Parameter drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance Conditions VGS = 0 V; ID = 1.35 mA VDS = 10 V; ID = 1.35 mA VGS = 0 V; VDS = 50 V VGS = VGSth + 3.75 V; VDS = 10 V VGS = 10 V; VDS = 0 V VGS = VGSth + 3.75 V; ID = 4.5 A VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz [1] [1] [1] Min 104 1.4 19 - Typ 21 210 100 33.5 1 Max 2.4 1.4 140 - Unit V V μA A nA mΩ pF pF pF ID is the drain current. Table 7. RF characteristics Th = 25 °C unless otherwise specified. Symbol VDS IDq PL(PEP) Gp ηD IMD3 BLF881_BLF881S_2 Parameter drain-source voltage quiescent drain current peak envelope power load power power gain drain efficiency third-order intermodulation distortion Conditions Min 20 45 - Typ 50 0.5 140 21 49 −34 Max −30 Unit V A W dB % dBc 3 of 18 2-Tone, class AB © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor Table 7. RF characteristics …continued Th = 25 °C unless otherwise specified. Symbol VDS IDq PL(AV) Gp ηD IMDshldr PAR [1] [2] Parameter drain-source voltage quiescent drain current average output power power gain drain efficiency intermodulation distortion shoulder peak-to-average ratio Conditions Min 20 30 [1] [2] Typ 50 0.5 33 21 34 −33 8.3 Max −30 - Unit V A W dB % dBc dB DVB-T (8k OFDM) - Measured [dBc] with delta marker at 4.3 MHz from center frequency. PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 200 Coss (pF) 160 001aal074 120 80 40 0 0 20 40 60 VDS (V) 80 VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 4 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 001aal075 23 Gp (dB) 22 21 20 19 18 17 16 0 Gp 70 ηD (%) 60 50 40 30 20 10 ηD 40 80 120 0 160 200 PL (W) VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. Fig 2. CW power gain and drain efficiency as function of load power; typical values 7.1.2 2-Tone 0001aal076 001aal077 23 Gp (dB) 22 21 20 19 18 17 16 0 Gp 70 ηD (%) 60 50 40 30 0 IMD3 (dBc) −20 ηD −40 20 10 0 120 160 PL(AV) (W) −60 40 80 0 40 80 120 160 PL(AV) (W) VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. Fig 3. 2-Tone power gain and drain efficiency as function of average load power; typical values Fig 4. 2-Tone third order intermodulation distortion as a function of average load power; typical values BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 5 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 7.1.3 DVB-T 001aal078 001aal079 23 Gp (dB) 22 21 20 Gp 70 ηD (%) 60 50 40 0 IMDshldr (dBc) −10 −20 ηD 19 18 17 16 0 30 60 PL(AV) (W) 90 30 20 −40 10 (2) (1) −30 0 −50 0 30 60 PL(AV) (W) 90 VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. (1) Lower adjacent channel (2) Upper adjacent channel Fig 5. DVB-T power gain and drain efficiency as function of average load power; typical values Fig 6. DVB-T shoulder distance as a function of average load power; typical values BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 6 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 7.2 Broadband RF figures 7.2.1 DVB-T 001aal080 001aal081 9.0 PAR (dB) 8.0 PAR 50 ηD (%) 40 25 Gp (dB) 23 0 IMDshdr (dBc) −10 21 Gp −20 ηD 7.0 30 19 IMDshdr −30 17 −40 6.0 400 500 600 700 20 800 900 f (MHz) 15 400 500 600 700 −50 800 900 f (MHz) VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in Section 8. VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in Section 8. Fig 7. DVB-T PAR at 0.01 % probability on the CCDF and drain efficiency as function of frequency; typical values Fig 8. DVB-T power gain and shoulder distance as function of frequency; typical values 7.3 Ruggedness in class-AB operation The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. Ruggedness is measured in the application circuit as described in Section 8. BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 7 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 7.4 Reliability 106 Years 105 (1) (2) (3) (4) (5) (6) 001aal082 104 103 102 10 (7) (8) (9) (10) (11) 1 0 2 4 IDS(DC) (A) 6 TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 9. BLF881 electromigration BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 8 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 8. Test information Table 8. List of components For test circuit, see Figure 10, Figure 11 and Figure 12. Component C1, C2 C3, C4 C5 C6 C7 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Value 5.1 pF 10 pF 6.8 pF 4.7 pF 2.7 pF 100 pF 10 μF 470 μF; 63 V 10 pF 8.2 pF 0.6 pF to 4.5 pF 6.8 pF 3.9 pF 100 Ω 10 kΩ [3] [3] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [3] [3] [1] [2] [1] [1] [1] [1] Remarks C8, C9, C10, C25, multilayer ceramic chip capacitor C26 C11, C27 C12 C20 C21 C22 C23 C24 L1 L2 L3 L4 L5 L6 L7 L20 L21 L22 L23 R1 R2 [1] [2] [3] [4] multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor trimmer multilayer ceramic chip capacitor multilayer ceramic chip capacitor stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline resistor resistor TDK C570X7R1H106KT000N or capacitor of same quality. Tekelec (W × L) 7 mm × 15 mm (W × L) 2.4 mm × 9 mm (W × L) 2.4 mm × 10 mm (W × L) 2.4 mm × 25 mm (W × L) 2.4 mm × 10 mm (W × L) 2.0 mm × 20 mm (W × L) 2.0 mm × 21 mm (W × L) 7 mm × 12 mm (W × L) 2.4 mm × 13 mm (W × L) 2.4 mm × 31 mm (W × L) 2.4 mm × 5 mm American technical ceramics type 100B or capacitor of same quality. American technical ceramics type 180R or capacitor of same quality. American technical ceramics type 100A or capacitor of same quality. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 μm. BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 9 of 18 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Product data sheet Rev. 02 — 10 February 2010 © NXP B.V. 2010. All rights reserved. BLF881_BLF881S_2 NXP Semiconductors VGG R2 C11 C27 C12 VDD C26 C9 R1 L6 C20 C1 C3 C8 50 Ω C25 L23 L22 L21 L20 L1 L2 L3 L4 L5 50 Ω C24 C23 C22 C21 C2 L7 C4 C5 C6 C7 BLF881; BLF881S C10 001aaj288 UHF power LDMOS transistor 10 of 18 See Table 8 for a list of components. Fig 10. Class-AB common-source broadband amplifier NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 76.2 mm 40 mm 40 mm 001aaj289 Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 11 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor R2 C11 C9 C12 C27 L6 C26 R1 C1 C20 C25 L23 L21 C24 C22 C21 C5 C2 C23 C4 L3 L5 C6 L23 C7 C8 L20 L1 L2 C3 L7 C10 L4 001aaj290 See Table 8 for a list of components. Fig 12. Component layout for class-AB common source amplifier BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 12 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 q C B c 1 E1 H U2 E A p w1 M A M B M 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 b 5.59 5.33 c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 0.233 0.227 E1 5.97 5.72 F 1.65 1.40 H 18.54 17.02 0.73 0.67 p 3.43 3.18 Q 2.21 1.96 q 14.27 U1 20.45 20.19 U2 5.97 5.72 w1 0.25 w2 0.51 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.235 0.065 0.225 0.055 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION SOT467C REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-06 99-12-28 Fig 13. Package outline SOT467C BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 13 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor Earless LDMOST ceramic package; 2 leads SOT467B D A F 3 D1 D U1 1 c L E1 H U2 E 2 b w2 A Q 0 Dimensions Unit(1) mm A b c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 E1 5.97 5.72 F H 5 scale L Q 2.21 1.96 10 mm U1 9.78 9.53 U2 5.97 w2 0.25 max 4.67 5.59 nom min 3.94 5.33 1.65 18.29 2.92 1.40 17.27 2.16 5.72 max 0.184 0.22 0.006 0.364 0.365 0.233 0.235 0.065 0.72 0.115 0.087 0.385 0.235 0.01 inches nom min 0.155 0.21 0.004 0.356 0.355 0.227 0.225 0.055 0.68 0.085 0.077 0.375 0.225 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version SOT467B References IEC JEDEC JEITA European projection sot467b_po Issue date 08-12-09 09-10-27 Fig 14. Package outline SOT467B BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 14 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 10. Abbreviations Table 9. Acronym CW CCDF DVB DVB-T ESD HF IMD3 LDMOS LDMOST OFDM PAR PEP RF TTF UHF VSWR Abbreviations Description Continuous Wave Complementary Cumulative Distribution Function Digital Video Broadcast Digital Video Broadcast - Terrestrial ElectroStatic Discharge High Frequency Third order InterModulation Distortion Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Orthogonal Frequency Division Multiplexing Peak-to-Average power Ratio Peak Envelope Power Radio Frequency Time To Failure Ultra High Frequency Voltage Standing-Wave Ratio 11. Revision history Table 10. Revision history Release date 20100210 Data sheet status Product data sheet Preliminary data sheet Change notice Supersedes BLF881_BLF881S_1 Document ID BLF881_BLF881S_2 Modifications: BLF881_BLF881S_1 • The status of this document has been changed to “Product data sheet”. 20091210 BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 15 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BLF881_BLF881S_2 Product data sheet Rev. 02 — 10 February 2010 16 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 17 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.1.1 7.1.2 7.1.3 7.2 7.2.1 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 5 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Broadband RF figures . . . . . . . . . . . . . . . . . . . 7 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Ruggedness in class-AB operation . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 February 2010 Document identifier: BLF881_BLF881S_2