BLM6G10-30

BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC Rev. 01 — 28 August 2009 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 920 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1) Table 1. Typical performance Typical RF performance at Th = 25 °C. Mode of operation 2-carrier W-CDMA [1] f (MHz) f1 = 935; f2 = 945 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 29 ηD (%) 11.5 IMD3 (dBc) −48.5[1] ACPR (dBc) −52[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at a frequency of 940 MHz: N Average output power = 2 W N Gain = 29 dB (typ) N Efficiency = 11.5 % N IMD3 = −48.5 dBc N ACPR = −52 dBc I Integrated temperature compensated bias I Excellent thermal stability I Biasing of individual stages is externally accessible I Integrated ESD protection I Small component size, very suitable for PA size reduction I On-chip matching (input matched to 50 ohm, output partially matched) I High power gain I Designed for broadband operation (920 MHz to 960 MHz) NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC 2. Pinning information 2.1 Pinning BLM6G10-30 BLM6G10-30G GND VDS1 n.c. n.c. n.c. RF input n.c. VGS1 VGS2 1 2 3 4 5 6 7 8 9 16 GND 15 n.c. 14 RF output/VDS2 VDS1 10 GND 11 13 n.c. 12 GND 001aak500 Transparent top view Fig 1. Pin configuration 2.2 Pin description Table 2. Pin 1, 11, 12, 16 2 3, 4, 5, 7, 13, 15 6 8 9 10 14 flange Pin description Description GROUND VDS1 n.c. RF_INPUT VGS1 VGS2 VDS1 RF_OUTPUT/VDS2 RF_GROUND BLM6G10-30_BLM6G10-30G_1 © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 01 — 28 August 2009 2 of 11 NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC 3. Ordering information Table 3. Ordering information Package Name BLM6G10-30 BLM6G10-30G Description HSOP16F: plastic, heatsink small outline package; 16 leads (flat) HSOP16: plastic, heatsink small outline package; 16 leads Version SOT834-1 SOT822-1 Type number 4. Block diagram 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID1 ID2 Tstg Tj Parameter drain-source voltage gate-source voltage first stage drain current second stage drain current storage temperature junction temperature Conditions Min 0 −65 Max 65 +13 3 9 +150 200 Unit V V A A °C °C 6. Thermal characteristics Table 5. Symbol Rth(j-c)1 Rth(j-c)2 [1] Thermal characteristics Parameter first stage thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 2 W; 2-carrier W-CDMA [1] Value 7.5 2.3 Unit K/W K/W second stage thermal resistance Tcase = 80 °C; PL = 2 W; from junction to case 2-carrier W-CDMA [1] Thermal resistance is determined under specific RF operating conditions. BLM6G10-30_BLM6G10-30G_1 © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 01 — 28 August 2009 3 of 11 NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC 7. Characteristics Table 6. Characteristics Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 922.5 MHz; f2 = 932.5 MHz; f3 = 947.5 MHz; f4 = 957.5 MHz; VDS = 28 V; IDq1 = 105 mA; IDq2 = 288 mA; Th = 25 °C unless otherwise specified. Symbol PL(AV) Gp RLin ηD IMD3 ACPR Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W Conditions Min 27 12 10 Typ 2 29 15 11.5 −52 Max 31 −48.5 Unit W dB dB % dBc dBc third-order intermodulation distortion PL(AV) = 2 W −48.5 −45 8. Application information 8.1 Ruggedness The BLMG10-30 and BLM6G10-30G are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq1 = 105 mA; IDq2 = 288 mA; PL = 30 W (CW). 8.2 Impedance information Table 7. f MHz 850 860 880 900 920 940 960 980 [1] [2] Typical impedance Zi[1] Ω 43.6 − j0 43.5 − j0.25 43.4 − j0.4 43.4 − j0.6 43.5 − j0.9 43.6 − j1.3 43.6 − j1.7 43.6 − j2 ZL[2] Ω 3 − j0.8 3.2 − j0.7 3.4 − j0.5 3.5 − j0.2 3.45 − j0 3.2 − j0.1 3 − j0.1 2.7 − j0.1 Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. BLM6G10-30_BLM6G10-30G_1 © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 01 — 28 August 2009 4 of 11 NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC 8.3 Performance curves Performance curves are measured in a BLM6G22-30G application circuit. 35 Gp (dB) 33 ηD 31 Gp 29 001aak501 15 ηD (%) 13 −46 IMD3, ACPR (dBc) −48 001aak502 IMD3 11 −50 9 ACPR −52 27 7 25 880 920 960 f (MHz) 5 1000 −54 880 920 960 f (MHz) 1000 Tcase = 25 °C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 105 mA; IDq2 = 288 mA; carrier spacing = 10 MHz. Tcase = 25 °C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 105 mA; IDq2 = 288 mA; carrier spacing = 10 MHz. Fig 2. 2-carrier W-CDMA power gain and drain efficiency as function of frequency; typical values 001aak503 Fig 3. 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as function of frequency; typical values 001aak504 36 Gp (dB) 34 32 30 28 (3) 56 ηD (%) 48 40 32 −20 Gp (dB) −30 (1) Gp Gp (1) (2) (3) (2) −40 24 Gp 16 8 (3) (2) (1) ACPR (3) (2) (1) IMD3 26 24 22 10−1 −50 ηD 1 10 PL(AV) (W) 102 0 −60 10−1 1 10 PL(AV) (W) 102 VDS = 28 V; IDq1 = 105 mA; IDq2 = 288 mA; f = 940 MHz; carrier spacing = 10 MHz. (1) Tcase = −30 °C (2) Tcase = 25 °C (3) Tcase = 85 °C VDS = 28 V; IDq1 = 105 mA; IDq2 = 288 mA; f = 940 MHz; carrier spacing = 10 MHz. (1) Tcase = −30 °C (2) Tcase = 25 °C (3) Tcase = 85 °C Fig 4. 2-carrier W-CDMA power gain and drain efficiency as function of average output power and temperature; typical values Fig 5. 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as function of average output power and temperature; typical values © NXP B.V. 2009. All rights reserved. BLM6G10-30_BLM6G10-30G_1 Objective data sheet Rev. 01 — 28 August 2009 5 of 11 NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC 31 Gp (dB) 29 001aak505 −20 IMD (dBc) −30 −40 001aak506 27 −50 −60 −70 IMD3 25 IMD5 IMD7 23 (1) (2) (3) −80 −90 10−1 21 0 10 20 30 40 50 60 PL (W) 70 1 10 PL(PEP) (W) 102 f = 940 MHz; IDq1 = 105 mA; IDq2 = 288 mA. (1) VDS = 24 V (2) VDS = 28 V (3) VDS = 32 V IDq1 = 105 mA; IDq2 = 288 mA; f1 = 940 MHz; f2 = 940.1 MHz. Fig 6. One-tone CW power gain as function of output power and drain-source voltage; typical value Fig 7. Two-tone CW intermodulation distortion as function of peak envelope load power; typical value 001aak507 60 PL(M) (W) (1) 40 (2) (3) 20 0 880 920 960 f (MHz) 1000 Test signal: IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. (1) Tcase = −30 °C (2) Tcase = 25 °C (3) Tcase = 85 °C Fig 8. Single-carrier peak output power (peaks 3 dB compressed) as function of frequency and temperature; typical values BLM6G10-30_BLM6G10-30G_1 © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 01 — 28 August 2009 6 of 11 NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC 9. Package outline HSOP16F: plastic, heatsink small outline package; 16 leads (flat) SOT834-1 D E E2 A c y X HE D1 e3 (2×) D2 wM bp2 vM A 16 12 E1 pin 1 index A2 Q1 detail X 1 Z e (6×) e2 (4×) e1 (2×) 11 bp1 (5×) wM wM bp (10×) 0 DIMENSIONS (mm are the original dimensions) UNIT mm A2 3.3 3.0 bp bp1 bp2 5.87 5.72 c 0.32 0.23 D (1) 16.0 15.8 D1 13.0 12.6 D2 1.1 0.9 E (1) 11.1 10.9 E1 6.2 5.8 5 scale E2 2.9 2.5 e 1.02 10 mm e1 1.37 e2 5.69 e3 3.81 HE 16.2 15.8 Q1 1.7 1.5 v 0.25 w 0.25 y 0.1 Z 2.5 2.0 0.43 1.09 0.28 0.94 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT834-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-10-22 Fig 9. Package outline SOT834-1 © NXP B.V. 2009. All rights reserved. BLM6G10-30_BLM6G10-30G_1 Objective data sheet Rev. 01 — 28 August 2009 7 of 11 NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC HSOP16: plastic, heatsink small outline package; 16 leads SOT822-1 E D E2 A y c X HE v M A D1 e3 (2×) w M bp2 16 12 D2 Q E1 pin 1 index A2 A1 A4 (A3) θ Lp A 1 11 detail X Z e (6×) e2 (4×) e1 (2×) bp1 (5×) w M w M bp (10×) 0 5 scale 10 mm HE 14.5 13.9 Lp 1.1 0.8 E (1) 11.1 10.9 Q 1.5 1.4 E1 6.2 5.8 v 0.25 w 0.25 y 0.1 Z 2.5 2.0 θ 8° 0° DIMENSIONS (mm are the original dimensions) UNIT mm A max 3.6 A1 0.2 0 A2 3.3 3.0 A3 0.35 A4 0.06 −0.06 bp 0.43 0.28 b p1 1.09 0.94 b p2 5.87 5.72 c 0.32 0.23 D(1) 16.0 15.8 D1 13.0 12.6 D2 1.1 0.9 E2 2.9 2.5 e 1.02 e1 1.37 e2 5.69 e3 3.81 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included OUTLINE VERSION SOT822-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-07-23 07-02-08 Fig 10. Package outline SOT822-1 BLM6G10-30_BLM6G10-30G_1 © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 01 — 28 August 2009 8 of 11 NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC 10. Handling information 10.1 Moisture sensitivity Table 8. Moisture sensitivity level Class 3 Test methodology JESD-22-A113 11. Abbreviations Table 9. Acronym 3GPP CCDF CW DPCH LDMOS MMIC PA PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal Oxide Semiconductor Monolithic Microwave Integrated Circuit Power Amplifier Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access 12. Revision history Table 10. Revision history Release date 20090828 Data sheet status Objective data sheet Change notice Supersedes Document ID BLM6G10-30_BLM6G10-30G_1 BLM6G10-30_BLM6G10-30G_1 © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 01 — 28 August 2009 9 of 11 NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLM6G10-30_BLM6G10-30G_1 © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 01 — 28 August 2009 10 of 11 NXP Semiconductors BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC 15. Contents 1 1.1 1.2 2 2.1 2.2 3 4 5 6 7 8 8.1 8.2 8.3 9 10 10.1 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Handling information. . . . . . . . . . . . . . . . . . . . . 9 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 August 2009 Document identifier: BLM6G10-30_BLM6G10-30G_1