BLS6G3135-20

BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f (GHz) Pulsed RF VDS (V) PL (W) 20 Gp (dB) 15.5 ηD (%) 45 tr (ns) 20 tf (ns) 10 3.1 to 3.5 32 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.5 dB N Efficiency = 45 % I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 1.3 Applications I S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLS6G3135-20 (SOT608A) 1 1 3 2 2 3 sym112 BLS6G3135S-20 (SOT608B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLS6G3135-20 BLS6G3135S-20 Description flanged ceramic package; 2 mounting holes; 2 leads ceramic earless flanged package; 2 leads Version SOT608A SOT608B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 60 +13 2.1 +150 225 Unit V V A °C °C BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 March 2009 2 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 20 W tp = 100 µs; δ = 20 % tp = 300 µs; δ = 10 % 0.76 0.79 0.92 0.95 K/W K/W Typ Max Unit 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 40 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 8.3 V; VDS = 0 V VDS = 10 V; ID = 1.4 A VGS = VGS(th) + 3.75 V; ID = 1.4 A Min 60 1.4 6 Typ 2 8.2 2.8 0.37 Max 2.4 1.5 150 0.58 Unit V V µA A nA S Ω 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 300 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 50 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production circuit. Symbol PL VCC Gp ηD tr tf Parameter output power supply voltage power gain drain efficiency rise time fall time PL = 20 W PL = 20 W PL = 20 W PL = 20 W PL = 20 W Conditions Min 12 40 Typ 20 15.5 45 20 10 Max 32 50 50 Unit W V dB % ns ns BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 March 2009 3 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 7.1 Impedance information Table 8. f GHz 3.1 3.2 3.3 3.4 3.5 [1] Typical impedance ZL (optimized for ηD) Ω 6.99 + j12.9 5.82 + j8.77 2.32 + j6.17 5.52 + j6.10 5.79 + j3.19 ZL (optimized for Gp) Ω 13.01 + j14.75 11.47 + j11.17 10.05 + j10.55 9.93 + j8.48 9.37 + j5.73 Gp(opt) dB 18.08 17.97 17.75 17.91 17.68 ηD [1] % 48.34 45.60 47.01 47.03 46.54 ZS Ω 31.24 − j31.07 50.56 − j12.48 43.66 + j17.27 24.13 + j28.47 10.56 + j22.21 Measured with ZL optimized for Gp. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Ruggedness in class-AB operation The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 50 mA; PL = 20 W; tp = 300 µs; δ = 10 %. BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 March 2009 4 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 7.3 Graphs 17 Gp (dB) 15 ηD Gp 001aaf983 50 ηD (%) 40 17 Gp (dB) 15 001aaf984 (2) (3) (1) 13 30 13 11 20 11 9 10 9 7 3 3.2 3.4 f (GHz) 0 3.6 7 0 10 20 PL (W) 30 VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %; PL = 20 W. VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz Fig 2. Power gain and drain efficiency as functions of frequency; typical values 60 001aaf985 Fig 3. Power gain as a function of load power; typical values 30 (2) (3) 001aaf986 (1) ηD (%) 50 (1) (2) (3) PL (W) 20 40 30 10 20 10 0 10 20 PL (W) 30 0 0 0.4 0.8 Pi (W) 1.2 VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz Fig 4. Efficiency as a function of load power; typical values Fig 5. Load power as a function of input power; typical values BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 March 2009 5 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 17 Gp (dB) 15 ηD Gp 001aaf987 50 ηD (%) 40 16 Gp (dB) 14 001aaf988 (2) (3) (1) 13 30 12 11 20 10 9 10 8 7 3 3.2 3.4 f (GHz) 0 3.6 6 0 10 20 PL (W) 30 VDS = 32 V; IDq = 100 mA; tp = 50 µs; δ = 20 %; PL = 20 W. VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz Fig 6. Power gain and drain efficiency as functions of frequency; typical values 60 001aaf989 Fig 7. Power gain as a function of load power; typical values 30 (2) (3) 001aaf990 (1) ηD (%) 50 (1) PL (W) (2) (3) 20 40 30 10 20 10 0 10 20 PL (W) 30 0 0 0.4 0.8 Pi (W) 1.2 VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz Fig 8. Efficiency as a function of load power; typical values Fig 9. Load power as a function of input power; typical values BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 March 2009 6 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 8. Test information C5 C3 C13 C4 C9 C8 C10 C11 VDD C12 VGG C6 R1 C7 L1 λ / 4-line λ / 4-line C1 C2 001aah590 Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.2 and thickness = 0.64 mm. See Table 9 for list of components. Fig 10. Component layout for 3.1 GHz to 3.5 GHz test circuit Table 9. List of components See Figure 10. Component C1, C2, C5, C6, C7, C8, C9 C3, C4, C10, C11 C12 C13 L1 R1 [1] [2] Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor electrolytic capacitor copper wire resistor Value 33 pF 470 pF 47 µF; 63 V 10 µF; 35 V 49.9 Ω [1] [2] Remarks American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality. BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 March 2009 7 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 D1 U1 q C B c 1 H U2 p E1 E w1 M A M B M A b 2 w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.62 3.76 0.182 0.148 b 7.24 6.99 c 0.15 0.10 D D1 E E1 F 1.14 0.89 H 15.75 14.73 p 3.30 2.92 0.130 0.115 Q 1.70 1.35 q 15.24 U1 20.45 20.19 0.805 0.795 U2 9.91 9.65 w1 0.25 w2 0.51 10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395 10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395 0.285 0.006 0.275 0.004 0.045 0.620 0.035 0.580 0.067 0.600 0.053 0.390 0.010 0.020 0.380 OUTLINE VERSION SOT608A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-02-22 02-02-11 Fig 11. Package outline SOT608A BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 March 2009 8 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Ceramic earless flanged package; 2 leads SOT608B D A F 3 D1 U1 A c 1 H U2 E1 E 2 b w1 M A M Q 0 scale 5 mm DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT mm inch A 4.62 3.76 b 7.24 6.99 c 0.15 0.10 D D1 E E1 F 1.14 0.89 H 15.75 14.73 Q 1.70 1.35 U1 U2 w1 0.51 10.21 10.29 10.21 10.29 10.01 10.03 10.01 10.03 10.24 10.24 9.98 9.98 0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403 0.020 0.148 0.275 0.004 0.394 0.395 0.394 0.395 0.035 0.580 0.053 0.393 0.393 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION OUTLINE VERSION SOT608B ISSUE DATE 06-11-27 06-12-06 Fig 12. Package outline SOT608B BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 March 2009 9 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 10. Abbreviations Table 10. Acronym LDMOS RF S-Band VSWR Abbreviations Description Laterally Diffused Metal Oxide Semiconductor Radio Frequency Short wave Band Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Release date Data sheet status Product data sheet Product data sheet Change notice Supersedes BLS6G3135-20_6G3135S-20_2 BLS6G3135-20_6G3135S-20_1 Document ID Modifications: BLS6G3135-20_6G3135S-20_3 20090303 • Section 7.1 on page 4: Impedance information added Objective data sheet - BLS6G3135-20_6G3135S-20_2 20081217 BLS6G3135-20_6G3135S-20_1 20070307 BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 March 2009 10 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLS6G3135-20_6G3135S-20_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 March 2009 11 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation. . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 March 2009 Document identifier: BLS6G3135-20_6G3135S-20_3