BSN254A,126

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSN254; BSN254A N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2002 Feb 19 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A PINNING - SOT54 variant FEATURES • Direct interface to C-MOS, TTL, etc. DESCRIPTION PIN • High-speed switching BSN254 • No secondary breakdown • Low RDSon. BSN254A 1 gate source 2 drain gate 3 source drain APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed and line transformer drivers. d handbook, halfpage 1 2 3 DESCRIPTION g N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. s MAM146 note: various pinnings are available on request Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − 250 V − 310 mA − 1 W drain-source on-state resistance ID = 300 mA; VGS = 10 V 2.8 5 Ω gate-source threshold voltage − 2 V VDS drain-source voltage (DC) ID drain current (DC) Ptot total power dissipation RDSon VGSth Tamb ≤ 25 °C ID = 1 mA; VDS = VGS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 250 V − ±20 V − 310 mA − 1.25 A − 1 W storage temperature −55 +150 °C junction temperature − 150 °C VDS drain-source voltage (DC) VGSO gate-source voltage (DC) ID drain current (DC) IDM peak drain current Ptot total power dissipation Tstg Tj open drain Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum 10 × 10 mm. 2002 Feb 19 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 125 K/W thermal resistance from junction to ambient; note 1 Note 1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum 10 × 10 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 250 − − V IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − ±100 nA VGSth gate-source threshold voltage ID = 1 mA; VDS = VGS 0.8 − 2 V RDSon drain-source on-state resistance ID = 20 mA; VGS = 2.4 V − − 7.5 Ω ID = 300 mA; VGS = 10 V − 2.8 5 Ω IDSS drain-source leakage current VDS = 200 V; VGS = 0 − − 1 µA  Yfs transfer admittance ID = 300 mA; VDS = 25 V 200 600 − mS Ciss input capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 100 120 pF Coss output capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 21 30 pF Crss feedback capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 10 15 pF Switching times (see Figs 2 and 3) ton turn-on time ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V − 6 10 ns toff turn-off time ID = 250 mA; VDD = 50 V; VGS = 10 to 0 V − 47 60 ns 2002 Feb 19 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A handbook, halfpage VDD = 50 V handbook, halfpage 90 % INPUT 10 % 90 % OUTPUT 10 V ID 0V 10 % 50 Ω ton MBB691 MBB692 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms. MRC238 1.2 toff MGU569 1.2 handbook, halfpage handbook, halfpage Ptot ID (A) (W) (1) (2) (3) (4) 0.8 0.8 (5) 0.4 0.4 (6) (7) 0 0 0 50 100 150 200 Tamb (°C) 0 2 4 6 8 10 VDS (V) Tj = 25 °C. (1) VGS = 10 V. (2) VGS = 5 V. (3) VGS = 4 V. Fig.4 Power derating curve. 2002 Feb 19 Fig.5 4 (4) VGS = 3.5 V. (5) VGS = 3 V. (6) VGS = 2.5 V. (7) VGS = 2 V. Typical output characteristics. Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A MGU570 1.6 (A) MGU571 20 handbook, ID halfpage handbook, halfpage 1.4 RDSon (Ω) 1.2 15 (1) (2) 1 0.8 10 (3) 0.6 5 0.4 (4) (5) (6) 0.2 0 10−1 0 0 2 4 6 8 10 VGS (V) 1 ID (A) 10 Tj = 25 °C. (1) VGS = 2.5 V. (2) VGS = 3 V. (3) VGS = 3.5 V. (4) VGS = 4 V. (5) VGS = 5 V. (6) VGS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.7 Fig.6 Typical transfer characteristics. MGU572 250 handbook, halfpage C (pF) 200 150 Ciss 100 50 Coss Crss 0 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz; Tj = 25 °C. Fig.8 Input, output and feedback capacitance as functions of drain-source voltage; typical values. 2002 Feb 19 5 Drain-source on-state resistance as a function of drain current; typical values. Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A MGU573 2 MGU574 1.25 handbook, halfpage handbook, halfpage k k (1) 1 1.5 (2) 0.75 1 0.5 0.5 0.25 0 −50 0 50 100 0 −50 150 Tj (°C) 0 50 100 Tj (°C) 150 R DSon at T j k = ---------------------------------------R DSon at 25 °C Typical RDSon: V GSth at T j k = --------------------------------------V GSth at 25 °C (1) ID = 250 mA; VGS = 10 V. (2) ID = 20 mA; VGS = 2.4 V. Typical VGSth at 1 mA. Fig.9 Temperature coefficient of drain-source on-state resistance; typical values. 2002 Feb 19 Fig.10 Temperature coefficient of gate-source threshold voltage; typical values. 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c L2 E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) max L2 max mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant 2002 Feb 19 REFERENCES IEC JEDEC EIAJ TO-92 variant SC-43 7 EUROPEAN PROJECTION ISSUE DATE 98-03-26 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Feb 19 8 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A NOTES 2002 Feb 19 9 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A NOTES 2002 Feb 19 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A NOTES 2002 Feb 19 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613510/03/pp12 Date of release: 2002 Feb 19 Document order number: 9397 750 09312