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BSP52

BSP52

  • 厂商:

    NXP(恩智浦)

  • 封装:

  • 描述:

    BSP52 - NPN Darlington transistors - NXP Semiconductors

  • 数据手册
  • 价格&库存
BSP52 数据手册
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP50; BSP51; BSP52 NPN Darlington transistors Product data sheet Supersedes data of 1997 Apr 22 1999 Apr 23 NXP Semiconductors Product data sheet NPN Darlington transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification. 4 BSP50; BSP51; BSP52 PINNING PIN 1 2,4 3 base collector emitter DESCRIPTION 2, 4 DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complements: BSP60, BSP61 and BSP62. 1 Top view 2 3 MAM265 1 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP50 BSP51 BSP52 VCES collector-emitter voltage BSP50 BSP51 BSP52 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature open collector VBE = 0 − − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 45 60 80 5 1 2 100 1.25 +150 150 +150 V V V V A A mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − 60 80 90 V V V MIN. MAX. UNIT 1999 Apr 23 2 NXP Semiconductors Product data sheet NPN Darlington transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to solder point BSP50; BSP51; BSP52 CONDITIONS note 1 VALUE 96 17 UNIT K/W K/W 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook“. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER collector cut-off current BSP50 BSP51 BSP52 IEBO hFE emitter cut-off current DC current gain VBE = 0; VCE = 45 V VBE = 0; VCE = 60 V VBE = 0; VCE = 80 V IC = 0; VEB = 4 V VCE = 10 V; note 1; see Fig.2 IC = 150 mA IC = 500 mA VCEsat collector-emitter saturation voltage base-emitter saturation voltage transition frequency IC = 500 mA; IB = 0.5 mA IC = 500 mA; IB = 0.5 mA; Tj = 150 °C IC = 500 mA; IB = 0.5 mA 1 000 2 000 − − − − − − − − 200 − − 1.3 1.3 1.9 − − − V V V MHz − − − − − − − − 50 50 50 50 nA nA nA nA CONDITIONS MIN. TYP. MAX. UNIT VBEsat fT ton toff Note IC = 500 mA; VCE = 5 V; f = 100 MHz − ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA − − Switching times (between 10% and 90% levels); see Fig.3 turn-on time turn-off time 500 1 300 ns ns 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 1999 Apr 23 3 NXP Semiconductors Product data sheet NPN Darlington transistors BSP50; BSP51; BSP52 handbook, full pagewidth 5000 MGD838 hFE 4000 3000 2000 1000 0 10−1 1 10 102 IC (mA) 103 VCE = 10 V. Fig.2 DC current gain; typical values. handbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MLB826 Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = −1.8 V; VCC = 10.7 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1999 Apr 23 4 NXP Semiconductors Product data sheet NPN Darlington transistors PACKAGE OUTLINE BSP50; BSP51; BSP52 Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ SC-73 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 1999 Apr 23 5 NXP Semiconductors Product data sheet NPN Darlington transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production BSP50; BSP51; BSP52 DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Apr 23 6 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp7 Date of release: 1999 Apr 23 Document order number: 9397 750 05809
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