BT138X-800E

BT138X series D and E 12 A four-quadrant triacs, sensitive gate Rev. 03 — 10 March 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate triac in a SOT186A full pack plastic package. 1.2 Features I Very sensitive gate I Direct interfacing to logic level ICs I Isolated mounting base I Gate triggering in four quadrants I Direct interfacing to low power gate drive circuits I High isolation voltage 1.3 Applications I General purpose switching and phase control I 230 V lamp dimmers 1.4 Quick reference data I I I I I I VDRM ≤ 600 V (BT138X-600D) VDRM ≤ 600 V (BT138X-600E) VDRM ≤ 800 V (BT138X-800E) IGT ≤ 5 mA (BT138X-600D) IGT ≤ 10 mA (BT138X-600E) IGT ≤ 10 mA (BT138X-800E) I I I I I IT(RMS) ≤ 12 A ITSM ≤ 95 A (t = 20 ms) IGT ≤ 10 mA (T2− G+) (BT138X-600D) IGT ≤ 25 mA (T2− G+) (BT138X-600E) IGT ≤ 25 mA (T2− G+) (BT138X-800E) NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base; isolated mb T2 sym051 Simplified outline Graphic symbol T1 G 123 SOT186A (TO-220F) 3. Ordering information Table 2. Ordering information Package Name BT138X-600D BT138X-600E BT138X-800E TO-220F Description Version plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3-lead TO-220 ‘full pack’ Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM Parameter repetitive peak off-state voltage Conditions BT138X-600D BT138X-600E BT138X-800E IT(RMS) ITSM RMS on-state current full sine wave; Th ≤ 56 °C; see Figure 4 and 5 [1] [1] Min - Max 600 600 800 12 Unit V V V A non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms 95 105 45 50 50 50 10 A A A2s A/µs A/µs A/µs A/µs I2t dIT/dt I2t for fusing tp = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ G− T2− G− T2− G+ rate of rise of on-state current BT138X_SER_D_E_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 10 March 2008 2 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate Table 3. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IGM PGM PG(AV) Tstg Tj [1] Parameter peak gate current peak gate power average gate power storage temperature junction temperature Conditions Min - Max 2 5 0.5 +150 125 Unit A W W °C °C over any 20 ms period −40 - Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 20 Ptot (W) 15 003aac220 conduction angle (degrees) 30 60 90 120 180 form factor a 4 2.8 2.2 1.9 1.57 α = 180° 120° α 90° 60° 30° 10 5 0 0 2 4 6 8 10 12 IT(RMS) (A) 14 α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values BT138X_SER_D_E_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 10 March 2008 3 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 100 ITSM (A) 80 003aac217 60 40 IT ITSM t 1/f Tj(init) = 25 °C max 20 0 1 10 102 103 number of cycles 104 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 103 ITSM (A) IT 003aac221 ITSM t tp Tj(init) = 25 °C max 102 (1) (2) 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit (2) T2− G+ quadrant limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values BT138X_SER_D_E_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 10 March 2008 4 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 80 IT(RMS) (A) 70 60 50 40 30 003aac219 15 IT(RMS) (A) 003aac216 10 5 20 10 0 10-2 0 -50 10-1 1 10 surge duration (s) 0 50 100 Th (°C) 150 f = 50 Hz Th = 56 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of heatsink temperature; maximum values 5. Thermal characteristics Table 4. Symbol Rth(j-h) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 55 Max 4.0 Unit K/W K/W thermal resistance from junction to full cycle; see Figure 6 heatsink thermal resistance from junction to full cycle; in free air ambient 10 Zth(j-h) (K/W) 1 003aac222 10−1 P 10−2 tp t 10−3 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse width BT138X_SER_D_E_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 10 March 2008 5 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 6. Isolation characteristics Table 5. Isolation limiting values and characteristics Th = 25 °C unless otherwise specified. Symbol Visol(RMS) Parameter Conditions Min Typ Max 2500 Unit V RMS isolation voltage from all three terminals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; relative humidity ≤ 65 %; clean and dust free isolation capacitance from pin 2 to external heatsink; f = 1 MHz Cisol - 10 - pF 7. Static characteristics Table 6. Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions BT138X-600D Min IGT gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ T2+ G− T2− G− T2− G+ IL latching current VD = 12 V; IG = 0.1 A; see Figure 10 T2+ G+ T2+ G− T2− G− T2− G+ IH VT VGT holding current on-state voltage VD = 12 V; IG = 0.1 A; see Figure 11 IT = 15 A; see Figure 9 VD = 12 V VD = VDRM; Tj = 125 °C ID off-state current VD = VDRM(max); Tj = 125 °C 0.25 1.4 0.7 0.4 0.1 15 20 15 20 10 1.65 1.5 0.5 0.25 1.4 0.7 0.4 0.1 30 40 30 40 30 1.65 1.5 0.5 mA mA mA mA mA V V V mA 1.3 2.8 3.2 5.5 5 5 5 10 2.5 4.0 5.0 11 10 10 10 25 mA mA mA mA Typ Max BT138X-600E BT138X-800E Min Typ Max Unit gate trigger voltage IT = 0.1 A; see Figure 7 BT138X_SER_D_E_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 10 March 2008 6 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 8. Dynamic characteristics Table 7. Symbol Dynamic characteristics Parameter Conditions BT138X-600D Min dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); exponential waveform; gate open circuit; Tj = 125 °C gate-controlled turn-on time ITM = 16 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs Typ 50 Max BT138X-600E BT138X-800E Min Typ 150 Max V/µs Unit tgt - 2 - - 2 - µs 1.6 VGT VGT(25°C) 1.2 003aac223 3 IGT IGT(25°C) (1) (2) (3) (4) (1) (2) (3) (4) 003aac224 2 0.8 1 0.4 0 −60 −10 40 90 Tj (°C) 140 0 −60 −10 40 90 Tj (°C) 140 (1) T2− G+ (2) T2− G− (3) T2+ G− (4) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BT138X_SER_D_E_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 10 March 2008 7 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 40 IT (A) 30 003aac214 3 IL IL(25°C) 003aac225 2 20 (1) (2) (3) 1 10 0 0 0.5 1 1.5 2 2.5 VT (V) 0 −60 −10 40 90 Tj (°C) 140 Vo = 1.175 V Rs = 0.032 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage 2.0 IH IH(25°C) 1.5 Fig 10. Normalized latching current as a function of junction temperature 003aac226 1.0 0.5 0 −60 −10 40 90 Tj (°C) 140 Fig 11. Normalized holding current as a function of junction temperature BT138X_SER_D_E_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 10 March 2008 8 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 9. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E P q D1 T mounting base A A1 D j L2 b1 L b2 L1 K Q 1 2 b e e1 3 wM c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 b2 1.4 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.5 6.3 E 10.3 9.7 e 2.54 e1 5.08 j 2.7 1.7 K 0.6 0.4 L L1 L2 max. 3 (1) P 3.2 3.0 Q 2.6 2.3 q 3.0 2.6 T (2) w 0.4 14.4 3.30 13.5 2.79 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC 3-lead TO-220F JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 12. Package outline SOT186A (TO-220F) BT138X_SER_D_E_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 10 March 2008 9 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 10. Revision history Table 8. Revision history Release date 20080310 Data sheet status Product data sheet Change notice Supersedes BT138X_SERIES_E_2 Document ID BT138X_SER_D_E_3 Modifications: • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. BT138X-600D product added. Table 7 “Dynamic characteristics”: dVD/dt uprated for BT138X series E. Product data sheet Product data sheet BT138X_SERIES_E_1 - BT138X_SERIES_E_2 BT138X_SERIES_E_1 20010601 19970901 BT138X_SER_D_E_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 10 March 2008 10 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BT138X_SER_D_E_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 10 March 2008 11 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Isolation characteristics . . . . . . . . . . . . . . . . . . 6 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 March 2008 Document identifier: BT138X_SER_D_E_3