BT139-60DG

TO -22 0A B BT139-600E 4Q Triac Rev. 04 — 24 February 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 1.2 Features and benefits High blocking voltage capability High noise immunity Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants 1.3 Applications General purpose motor control General purpose switching 1.4 Quick reference data Table 1. Symbol VDRM ITSM Quick reference data Parameter repetitive peak off-state voltage non-repetitive peak on-state current RMS on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4; see Figure 5 full sine wave; Tmb ≤ 99 °C; see Figure 1; see Figure 2; see Figure 3 Conditions [1] Min - Typ - Max Unit 600 155 V A IT(RMS) - - 16 A NXP Semiconductors BT139-600E 4Q Triac Quick reference data …continued Parameter gate trigger current Conditions VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; see Figure 7 Min Typ 2.5 4 5 11 Max Unit 10 10 10 25 mA mA mA mA Table 1. Symbol IGT Static characteristics [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ms. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description T1 T2 G T2 main terminal 1 main terminal 2 gate mounting base; main terminal 2 mb T2 sym051 Simplified outline Graphic symbol T1 G 123 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BT139-600E BT139-600E/DG TO-220AB TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 SOT78 Type number BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 2 of 14 NXP Semiconductors BT139-600E 4Q Triac 4. Limiting values Table 4. Symbol VDRM IT(RMS) ITSM Limiting values Parameter repetitive peak off-state voltage RMS on-state current non-repetitive peak on-state current full sine wave; Tmb ≤ 99 °C; see Figure 1; see Figure 2; see Figure 3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4; see Figure 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I2t dIT/dt I2t for fusing tp = 10 ms; sine-wave pulse IT = 20 A; IG = 200 mA; dIG/dt = 0.2 A/µs; T2+ G+ IT = 20 A; IG = 200 mA; dIG/dt = 0.2 A/µs; T2+ GIT = 20 A; IG = 200 mA; dIG/dt = 0.2 A/µs; T2- GIT = 20 A; IG = 200 mA; dIG/dt = 0.2 A/µs; T2- G+ IGM PGM PG(AV) Tstg Tj [1] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions [1] Min - Max 600 16 155 170 120 50 50 50 10 2 5 0.5 150 125 Unit V A A A A2 s A/µs A/µs A/µs A/µs A W W °C °C rate of rise of on-state current peak gate current peak gate power average gate power storage temperature junction temperature over any 20 ms period -40 - Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ms. BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 3 of 14 NXP Semiconductors BT139-600E 4Q Triac 50 IT(RMS) (A) 40 001aab090 20 IT(RMS) (A) 15 001aab091 (1) 30 10 20 5 10 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 Tmb (°C) 150 Fig 1. RMS on-state current as a function of surge duration; maximum values 25 Fig 2. RMS on-state current as a function of mounting base temperature; maximum values 001aab093 95 Tmb(max) (°C) 101 Ptot (W) 20 α= 180 120 90 15 60 30 107 10 α 113 5 α 119 0 0 5 10 15 IT(RMS) (A) 125 20 Fig 3. Total power dissipation as a function of RMS on-state current; maximum values. BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 4 of 14 NXP Semiconductors BT139-600E 4Q Triac 160 ITSM (A) 120 T IT 001aab102 ITSM t Tj(initial) = 25 °C max 80 40 0 1 10 102 n 103 Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 001aab092 103 ITSM (A) 102 (1) IT ITSM (2) T t Tj(initial) = 25 °C max 10 10−2 10−1 1 10 T (ms) 102 Fig 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 5 of 14 NXP Semiconductors BT139-600E 4Q Triac 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions half cycle; see Figure 6 full cycle; see Figure 6 full cycle Min Typ 60 Max 1.7 1.2 Unit K/W K/W K/W 10 Zth(j-mb) (K/W) 1 (2) 001aab098 (1) 10−1 PD 10−2 tp t 10−3 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 6 of 14 NXP Semiconductors BT139-600E 4Q Triac 6. Characteristics Table 6. Symbol IGT Characteristics Parameter gate trigger current Conditions VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; see Figure 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; see Figure 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; see Figure 8 IH VT VGT holding current on-state voltage gate trigger voltage VD = 12 V; Tj = 25 °C; see Figure 9 IT = 20 A; Tj = 25 °C; see Figure 10 VD = 12 V; IT = 0.1 A; Tj = 25 °C; see Figure 11 VD = 400 V; IT = 0.1 A; Tj = 125 °C ID dVD/dt off-state current rate of rise of off-state voltage VD = 402 V; Tj = 125 °C VDM = 402 V; Tj = 125 °C; exponential waveform; gate open circuit ITM = 20 A; VD = 600 V; IG = 100 mA; dIG/dt = 5 A/µs Dynamic characteristics 50 V/µs Min 0.25 Typ 2.5 4 5 11 3.2 16 4 5.5 4 1.2 0.7 0.4 0.1 Max 10 10 10 25 30 40 30 40 45 1.6 1.5 0.5 Unit mA mA mA mA mA mA mA mA mA V V V mA Static characteristics tgt gate-controlled turn-on time - 2 - µs BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 7 of 14 NXP Semiconductors BT139-600E 4Q Triac 3 IGT (Tj) IGT(25°C) 2 001aab448 3 IL 001aab100 (1) (2) (3) IL(25°C) 2 (4) 1 1 0 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 Fig 7. Normalized gate trigger current as a function of junction temperature 3 001aab099 Fig 8. Normalized latching current as a function of junction temperature 50 001aab094 IH IH(25°C) 2 IT (A) 40 (1) (2) (3) 30 20 1 10 0 −50 0 0 50 100 Tj (°C) 150 0 1 2 VT (V) 3 Fig 9. Normalized holding current as a function of junction temperature Fig 10. On-state current as a function of on-state voltage BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 8 of 14 NXP Semiconductors BT139-600E 4Q Triac 1.6 VGT VGT(25°C) 1.2 001aab101 0.8 0.4 −50 0 50 100 Tj (°C) 150 Fig 11. Normalized gate trigger voltage as a function of junction temperature BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 9 of 14 NXP Semiconductors BT139-600E 4Q Triac 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e e c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 12. Package outline SOT78 (TO-220AB) BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 10 of 14 NXP Semiconductors BT139-600E 4Q Triac 8. Revision history Table 7. Revision history Release date 20110224 Data sheet status Product data sheet Change notice Supersedes BT139_SER_E v.3 Document ID BT139-600E v.4 Modifications: • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BT139-600E separated from data sheet BT139_SER_E v.3. Product data sheet BT139_SERIES_E v.2 BT139_SER_E v.3 20040923 BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 11 of 14 NXP Semiconductors BT139-600E 4Q Triac 9. Legal information 9.1 Data sheet status Product status [3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1] [2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 12 of 14 NXP Semiconductors BT139-600E 4Q Triac product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BT139-600E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 04 — 24 February 2011 13 of 14 NXP Semiconductors BT139-600E 4Q Triac 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 February 2011 Document identifier: BT139-600E